KR830001743A - 고압용 게이트 다이오드 스위치 - Google Patents

고압용 게이트 다이오드 스위치 Download PDF

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Publication number
KR830001743A
KR830001743A KR1019790004540A KR790004540A KR830001743A KR 830001743 A KR830001743 A KR 830001743A KR 1019790004540 A KR1019790004540 A KR 1019790004540A KR 790004540 A KR790004540 A KR 790004540A KR 830001743 A KR830001743 A KR 830001743A
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KR
South Korea
Prior art keywords
high voltage
diode switch
voltage gate
gate diode
gate
Prior art date
Application number
KR1019790004540A
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English (en)
Other versions
KR830002293B1 (ko
Inventor
어네스트 베르톨드 죠셉
랠프 하트만 아드리안
우르크하트 맥 래 알프레드
제임스 릴리 테렌스
윌리암 색클 피터
Original Assignee
알. 씨. 윈터
웨스턴 이렉트릭 컴패니 인코퍼레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 알. 씨. 윈터, 웨스턴 이렉트릭 컴패니 인코퍼레이티드 filed Critical 알. 씨. 윈터
Publication of KR830001743A publication Critical patent/KR830001743A/ko
Application granted granted Critical
Publication of KR830002293B1 publication Critical patent/KR830002293B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Abstract

내용 없음

Description

고압용 게이트 다이오드 스위치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시예에 따른 구조물을 도시한 것. 제2도는 제1도의 구조물의 회로 성분을 도시한 것. 제3도는 본 발명의 다른 실시예에 따른 쌍방향 스위치 회로를 도시한 것. 제4도는 본 발명의 다른 실시예 따른 구조물을 도시한 것. 제5도는 본 발명의 또 다른 실시예에 따른 구조물을 도시한 것. 제6도는 본 발명의 또 다른 실시예 따른 구조물을 도시한 것. 제7도는 본 발명의 또다른 실시예에 따른 구조물을 도시한 것. 제8도는 제6도 구조물의 평면도.

Claims (2)

  1. 반도체 게이트 다이오드 스위치에 있어서, 제1(18) 및 제2(24) 그리고 게이트 영역(20)은 각각 반도체부분(16)의 제1주 표면상에 포함된 면을 갖는 것을 특징으로하는 고압용 게이트 다이오드 스위치.
  2. ※ 참고사항 : 최초출원 내용의 일부를 보정하여 공개하는 것임.
KR1019790004540A 1978-12-20 1979-12-20 고압용 게이트 다이오드 스위치 KR830002293B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US97205678A 1978-12-20 1978-12-20
US97202278A 1978-12-20 1978-12-20
US97202178A 1978-12-20 1978-12-20
US972021 1978-12-20
US?972022? 1978-12-20
US972056 1978-12-20
US?972056? 1978-12-20
US972022 1978-12-20
US?972021? 1978-12-20

Publications (2)

Publication Number Publication Date
KR830001743A true KR830001743A (ko) 1983-05-18
KR830002293B1 KR830002293B1 (ko) 1983-10-21

Family

ID=27420763

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019790004540A KR830002293B1 (ko) 1978-12-20 1979-12-20 고압용 게이트 다이오드 스위치

Country Status (18)

Country Link
JP (1) JPS6412106B2 (ko)
KR (1) KR830002293B1 (ko)
AU (1) AU529702B2 (ko)
CH (1) CH659151A5 (ko)
DD (1) DD147897A5 (ko)
ES (1) ES487066A1 (ko)
FR (1) FR2445026A1 (ko)
GB (1) GB2049283B (ko)
HU (1) HU181030B (ko)
IE (1) IE48892B1 (ko)
IL (1) IL58970A (ko)
IN (1) IN153497B (ko)
IT (1) IT1126603B (ko)
NL (1) NL7920184A (ko)
PL (1) PL220494A1 (ko)
SE (1) SE446139B (ko)
SG (1) SG32884G (ko)
WO (1) WO1980001337A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242697A (en) * 1979-03-14 1980-12-30 Bell Telephone Laboratories, Incorporated Dielectrically isolated high voltage semiconductor devices
CA1145057A (en) * 1979-12-28 1983-04-19 Adrian R. Hartman High voltage solid-state switch
JPS58500427A (ja) * 1981-03-27 1983-03-17 ウエスタ−ン　エレクトリツク　カムパニ−，インコ−ポレ−テツド ゲ−テツド・ダイオ−ド・スイツチ
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1547287A (fr) * 1966-12-19 1968-11-22 Lucas Industries Ltd Diode semiconductrice
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
JPS4933432B1 (ko) * 1968-12-20 1974-09-06
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5032942U (ko) * 1973-07-23 1975-04-10
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same

Also Published As

Publication number Publication date
JPS6412106B2 (ko) 1989-02-28
JPS55501079A (ko) 1980-12-04
SE8005703L (sv) 1980-08-13
NL7920184A (nl) 1980-10-31
FR2445026A1 (fr) 1980-07-18
SE446139B (sv) 1986-08-11
IL58970A0 (en) 1980-03-31
CH659151A5 (de) 1986-12-31
IE792474L (en) 1980-06-20
IT7928206A0 (it) 1979-12-19
IN153497B (ko) 1984-07-21
ES487066A1 (es) 1980-09-16
HU181030B (en) 1983-05-30
IL58970A (en) 1982-07-30
GB2049283A (en) 1980-12-17
KR830002293B1 (ko) 1983-10-21
AU5386679A (en) 1980-06-26
GB2049283B (en) 1983-07-27
AU529702B2 (en) 1983-06-16
IT1126603B (it) 1986-05-21
PL220494A1 (ko) 1980-09-08
WO1980001337A1 (en) 1980-06-26
SG32884G (en) 1985-02-08
FR2445026B1 (ko) 1983-08-19
DD147897A5 (de) 1981-04-22
IE48892B1 (en) 1985-06-12

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