DD147897A5 - Dielektrisch isolierter hochspannungs-festkoerperschalter - Google Patents
Dielektrisch isolierter hochspannungs-festkoerperschalter Download PDFInfo
- Publication number
- DD147897A5 DD147897A5 DD79217696A DD21769679A DD147897A5 DD 147897 A5 DD147897 A5 DD 147897A5 DD 79217696 A DD79217696 A DD 79217696A DD 21769679 A DD21769679 A DD 21769679A DD 147897 A5 DD147897 A5 DD 147897A5
- Authority
- DD
- German Democratic Republic
- Prior art keywords
- region
- semiconductor body
- switching device
- item
- gate electrode
- Prior art date
Links
- 239000007787 solid Substances 0.000 title claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 claims description 11
- 230000002457 bidirectional effect Effects 0.000 claims description 6
- 239000002800 charge carrier Substances 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 51
- 239000012535 impurity Substances 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
- Electronic Switches (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US97202178A | 1978-12-20 | 1978-12-20 | |
| US97202278A | 1978-12-20 | 1978-12-20 | |
| US97205678A | 1978-12-20 | 1978-12-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DD147897A5 true DD147897A5 (de) | 1981-04-22 |
Family
ID=27420763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD79217696A DD147897A5 (de) | 1978-12-20 | 1979-12-14 | Dielektrisch isolierter hochspannungs-festkoerperschalter |
Country Status (18)
| Country | Link |
|---|---|
| JP (1) | JPS6412106B2 (ko) |
| KR (1) | KR830002293B1 (ko) |
| AU (1) | AU529702B2 (ko) |
| CH (1) | CH659151A5 (ko) |
| DD (1) | DD147897A5 (ko) |
| ES (1) | ES487066A1 (ko) |
| FR (1) | FR2445026A1 (ko) |
| GB (1) | GB2049283B (ko) |
| HU (1) | HU181030B (ko) |
| IE (1) | IE48892B1 (ko) |
| IL (1) | IL58970A (ko) |
| IN (1) | IN153497B (ko) |
| IT (1) | IT1126603B (ko) |
| NL (1) | NL7920184A (ko) |
| PL (1) | PL220494A1 (ko) |
| SE (1) | SE446139B (ko) |
| SG (1) | SG32884G (ko) |
| WO (1) | WO1980001337A1 (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4242697A (en) * | 1979-03-14 | 1980-12-30 | Bell Telephone Laboratories, Incorporated | Dielectrically isolated high voltage semiconductor devices |
| CA1145057A (en) * | 1979-12-28 | 1983-04-19 | Adrian R. Hartman | High voltage solid-state switch |
| JPS58500427A (ja) * | 1981-03-27 | 1983-03-17 | ウエスタ−ン エレクトリツク カムパニ−，インコ−ポレ−テツド | ゲ−テツド・ダイオ−ド・スイツチ |
| US4467344A (en) * | 1981-12-23 | 1984-08-21 | At&T Bell Telephone Laboratories, Incorporated | Bidirectional switch using two gated diode switches in a single dielectrically isolated tub |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1547287A (fr) * | 1966-12-19 | 1968-11-22 | Lucas Industries Ltd | Diode semiconductrice |
| US3417393A (en) * | 1967-10-18 | 1968-12-17 | Texas Instruments Inc | Integrated circuit modular radar antenna |
| JPS4933432B1 (ko) * | 1968-12-20 | 1974-09-06 | ||
| DE2102103A1 (de) * | 1970-01-22 | 1971-07-29 | Rca Corp | Durch Feldeffekt gesteuerte Diode |
| US3722079A (en) * | 1970-06-05 | 1973-03-27 | Radiation Inc | Process for forming buried layers to reduce collector resistance in top contact transistors |
| DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
| JPS5032942U (ko) * | 1973-07-23 | 1975-04-10 | ||
| US3911463A (en) * | 1974-01-07 | 1975-10-07 | Gen Electric | Planar unijunction transistor |
| US4146905A (en) * | 1974-06-18 | 1979-03-27 | U.S. Philips Corporation | Semiconductor device having complementary transistor structures and method of manufacturing same |
-
1979
- 1979-12-06 GB GB8025972A patent/GB2049283B/en not_active Expired
- 1979-12-06 NL NL7920184A patent/NL7920184A/nl unknown
- 1979-12-06 CH CH6266/80A patent/CH659151A5/de not_active IP Right Cessation
- 1979-12-06 WO PCT/US1979/001043 patent/WO1980001337A1/en unknown
- 1979-12-06 JP JP55500207A patent/JPS6412106B2/ja not_active Expired
- 1979-12-10 HU HU79WE614A patent/HU181030B/hu unknown
- 1979-12-14 AU AU53866/79A patent/AU529702B2/en not_active Ceased
- 1979-12-14 DD DD79217696A patent/DD147897A5/de unknown
- 1979-12-17 IL IL58970A patent/IL58970A/xx unknown
- 1979-12-18 PL PL22049479A patent/PL220494A1/xx unknown
- 1979-12-18 FR FR7930946A patent/FR2445026A1/fr active Granted
- 1979-12-19 IT IT28206/79A patent/IT1126603B/it active
- 1979-12-19 ES ES487066A patent/ES487066A1/es not_active Expired
- 1979-12-19 IE IE2474/79A patent/IE48892B1/en not_active IP Right Cessation
- 1979-12-20 KR KR1019790004540A patent/KR830002293B1/ko active
-
1980
- 1980-08-13 SE SE8005703A patent/SE446139B/sv not_active IP Right Cessation
- 1980-11-28 IN IN1328/CAL/80A patent/IN153497B/en unknown
-
1984
- 1984-04-25 SG SG328/84A patent/SG32884G/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| IT1126603B (it) | 1986-05-21 |
| CH659151A5 (de) | 1986-12-31 |
| IN153497B (ko) | 1984-07-21 |
| NL7920184A (nl) | 1980-10-31 |
| AU529702B2 (en) | 1983-06-16 |
| ES487066A1 (es) | 1980-09-16 |
| IT7928206A0 (it) | 1979-12-19 |
| WO1980001337A1 (en) | 1980-06-26 |
| IE48892B1 (en) | 1985-06-12 |
| HU181030B (en) | 1983-05-30 |
| FR2445026B1 (ko) | 1983-08-19 |
| JPS55501079A (ko) | 1980-12-04 |
| SE8005703L (sv) | 1980-08-13 |
| IE792474L (en) | 1980-06-20 |
| JPS6412106B2 (ko) | 1989-02-28 |
| GB2049283B (en) | 1983-07-27 |
| GB2049283A (en) | 1980-12-17 |
| FR2445026A1 (fr) | 1980-07-18 |
| KR830002293B1 (ko) | 1983-10-21 |
| IL58970A0 (en) | 1980-03-31 |
| AU5386679A (en) | 1980-06-26 |
| KR830001743A (ko) | 1983-05-18 |
| PL220494A1 (ko) | 1980-09-08 |
| SG32884G (en) | 1985-02-08 |
| SE446139B (sv) | 1986-08-11 |
| IL58970A (en) | 1982-07-30 |
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