SE8005703L - Dielektriskt isolerad halvledaromkopplare - Google Patents
Dielektriskt isolerad halvledaromkopplareInfo
- Publication number
- SE8005703L SE8005703L SE8005703A SE8005703A SE8005703L SE 8005703 L SE8005703 L SE 8005703L SE 8005703 A SE8005703 A SE 8005703A SE 8005703 A SE8005703 A SE 8005703A SE 8005703 L SE8005703 L SE 8005703L
- Authority
- SE
- Sweden
- Prior art keywords
- type
- region
- semiconductor body
- cathode
- semiconductor switch
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 230000002457 bidirectional effect Effects 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US97202278A | 1978-12-20 | 1978-12-20 | |
US97202178A | 1978-12-20 | 1978-12-20 | |
US97205678A | 1978-12-20 | 1978-12-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE8005703L true SE8005703L (sv) | 1980-08-13 |
SE446139B SE446139B (sv) | 1986-08-11 |
Family
ID=27420763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE8005703A SE446139B (sv) | 1978-12-20 | 1980-08-13 | Dielektriskt isolerad halvledaromkopplare avsedd for hog spenning |
Country Status (18)
Country | Link |
---|---|
JP (1) | JPS6412106B2 (sv) |
KR (1) | KR830002293B1 (sv) |
AU (1) | AU529702B2 (sv) |
CH (1) | CH659151A5 (sv) |
DD (1) | DD147897A5 (sv) |
ES (1) | ES487066A1 (sv) |
FR (1) | FR2445026A1 (sv) |
GB (1) | GB2049283B (sv) |
HU (1) | HU181030B (sv) |
IE (1) | IE48892B1 (sv) |
IL (1) | IL58970A (sv) |
IN (1) | IN153497B (sv) |
IT (1) | IT1126603B (sv) |
NL (1) | NL7920184A (sv) |
PL (1) | PL220494A1 (sv) |
SE (1) | SE446139B (sv) |
SG (1) | SG32884G (sv) |
WO (1) | WO1980001337A1 (sv) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4242697A (en) * | 1979-03-14 | 1980-12-30 | Bell Telephone Laboratories, Incorporated | Dielectrically isolated high voltage semiconductor devices |
CA1145057A (en) * | 1979-12-28 | 1983-04-19 | Adrian R. Hartman | High voltage solid-state switch |
EP0075589B1 (en) * | 1981-03-27 | 1987-01-14 | Western Electric Company, Incorporated | Gated diode switch |
US4467344A (en) * | 1981-12-23 | 1984-08-21 | At&T Bell Telephone Laboratories, Incorporated | Bidirectional switch using two gated diode switches in a single dielectrically isolated tub |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1547287A (fr) * | 1966-12-19 | 1968-11-22 | Lucas Industries Ltd | Diode semiconductrice |
US3417393A (en) * | 1967-10-18 | 1968-12-17 | Texas Instruments Inc | Integrated circuit modular radar antenna |
JPS4933432B1 (sv) * | 1968-12-20 | 1974-09-06 | ||
DE2102103A1 (de) * | 1970-01-22 | 1971-07-29 | Rca Corp | Durch Feldeffekt gesteuerte Diode |
US3722079A (en) * | 1970-06-05 | 1973-03-27 | Radiation Inc | Process for forming buried layers to reduce collector resistance in top contact transistors |
DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
JPS5032942U (sv) * | 1973-07-23 | 1975-04-10 | ||
US3911463A (en) * | 1974-01-07 | 1975-10-07 | Gen Electric | Planar unijunction transistor |
US4146905A (en) * | 1974-06-18 | 1979-03-27 | U.S. Philips Corporation | Semiconductor device having complementary transistor structures and method of manufacturing same |
-
1979
- 1979-12-06 CH CH6266/80A patent/CH659151A5/de not_active IP Right Cessation
- 1979-12-06 JP JP55500207A patent/JPS6412106B2/ja not_active Expired
- 1979-12-06 WO PCT/US1979/001043 patent/WO1980001337A1/en unknown
- 1979-12-06 NL NL7920184A patent/NL7920184A/nl unknown
- 1979-12-06 GB GB8025972A patent/GB2049283B/en not_active Expired
- 1979-12-10 HU HU79WE614A patent/HU181030B/hu unknown
- 1979-12-14 AU AU53866/79A patent/AU529702B2/en not_active Ceased
- 1979-12-14 DD DD79217696A patent/DD147897A5/de unknown
- 1979-12-17 IL IL58970A patent/IL58970A/xx unknown
- 1979-12-18 FR FR7930946A patent/FR2445026A1/fr active Granted
- 1979-12-18 PL PL22049479A patent/PL220494A1/xx unknown
- 1979-12-19 IT IT28206/79A patent/IT1126603B/it active
- 1979-12-19 IE IE2474/79A patent/IE48892B1/en not_active IP Right Cessation
- 1979-12-19 ES ES487066A patent/ES487066A1/es not_active Expired
- 1979-12-20 KR KR1019790004540A patent/KR830002293B1/ko active
-
1980
- 1980-08-13 SE SE8005703A patent/SE446139B/sv not_active IP Right Cessation
- 1980-11-28 IN IN1328/CAL/80A patent/IN153497B/en unknown
-
1984
- 1984-04-25 SG SG328/84A patent/SG32884G/en unknown
Also Published As
Publication number | Publication date |
---|---|
IN153497B (sv) | 1984-07-21 |
JPS6412106B2 (sv) | 1989-02-28 |
IL58970A0 (en) | 1980-03-31 |
WO1980001337A1 (en) | 1980-06-26 |
PL220494A1 (sv) | 1980-09-08 |
HU181030B (en) | 1983-05-30 |
IE48892B1 (en) | 1985-06-12 |
IE792474L (en) | 1980-06-20 |
SE446139B (sv) | 1986-08-11 |
ES487066A1 (es) | 1980-09-16 |
NL7920184A (nl) | 1980-10-31 |
AU5386679A (en) | 1980-06-26 |
IT1126603B (it) | 1986-05-21 |
IL58970A (en) | 1982-07-30 |
SG32884G (en) | 1985-02-08 |
AU529702B2 (en) | 1983-06-16 |
IT7928206A0 (it) | 1979-12-19 |
CH659151A5 (de) | 1986-12-31 |
DD147897A5 (de) | 1981-04-22 |
JPS55501079A (sv) | 1980-12-04 |
KR830001743A (ko) | 1983-05-18 |
KR830002293B1 (ko) | 1983-10-21 |
GB2049283B (en) | 1983-07-27 |
FR2445026A1 (fr) | 1980-07-18 |
FR2445026B1 (sv) | 1983-08-19 |
GB2049283A (en) | 1980-12-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1480402A (en) | Filament-type semiconductor switch device | |
KR890016631A (ko) | 절환이 용이한 전력 반도체 소자 | |
KR930703706A (ko) | 통합형 전력 스위치 구조체 | |
JPS5580886A (en) | Semiconductor memory element and memory circuit | |
GB1365714A (en) | Thyristor power switching circuits | |
KR830008401A (ko) | 절연 게이트형 트랜지스터 | |
EP0339962A3 (en) | Field effect semiconductor device | |
SE8203432L (sv) | Tvapoligt overstromsskydd | |
KR890001199A (ko) | 반도체 장치 및 회로 | |
WO1998012749A3 (de) | Emittergesteuerter thyristor | |
SE8005703L (sv) | Dielektriskt isolerad halvledaromkopplare | |
KR910008861A (ko) | 집적회로소자 | |
JPS5753944A (en) | Semiconductor integrated circuit | |
SE8005746L (sv) | For hog spenning avsedd halvledaromkopplare av skikttyp | |
JPS57176781A (en) | Superconductive device | |
JPS6454762A (en) | Insulated gate field effect transistor | |
JPS5543864A (en) | Mis semiconductor device | |
JPS52120774A (en) | Semiconductor device | |
JPS56158480A (en) | Field effect transistor | |
JPS5376675A (en) | High breakdown voltage field effect power transistor | |
GB1506478A (en) | Semiconductor switching device | |
JPS6414960A (en) | Semiconductor element | |
CA1123122A (en) | High voltage dielectrically isolated dual gate solid-state switch | |
JPS56101779A (en) | Schottky barrier diode | |
SE8008851L (sv) | Halvledarswitch for hog spenning |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NAL | Patent in force |
Ref document number: 8005703-7 Format of ref document f/p: F |
|
NUG | Patent has lapsed |
Ref document number: 8005703-7 Format of ref document f/p: F |