IL58970A - High-voltage,solid-state switching device - Google Patents

High-voltage,solid-state switching device

Info

Publication number
IL58970A
IL58970A IL58970A IL5897079A IL58970A IL 58970 A IL58970 A IL 58970A IL 58970 A IL58970 A IL 58970A IL 5897079 A IL5897079 A IL 5897079A IL 58970 A IL58970 A IL 58970A
Authority
IL
Israel
Prior art keywords
voltage
solid
switching device
state switching
state
Prior art date
Application number
IL58970A
Other languages
English (en)
Other versions
IL58970A0 (en
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IL58970A0 publication Critical patent/IL58970A0/xx
Publication of IL58970A publication Critical patent/IL58970A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743Making of internal connections, substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391Gated diode structures
    • H01L29/7392Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electronic Switches (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IL58970A 1978-12-20 1979-12-17 High-voltage,solid-state switching device IL58970A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US97202278A 1978-12-20 1978-12-20
US97205678A 1978-12-20 1978-12-20
US97202178A 1978-12-20 1978-12-20

Publications (2)

Publication Number Publication Date
IL58970A0 IL58970A0 (en) 1980-03-31
IL58970A true IL58970A (en) 1982-07-30

Family

ID=27420763

Family Applications (1)

Application Number Title Priority Date Filing Date
IL58970A IL58970A (en) 1978-12-20 1979-12-17 High-voltage,solid-state switching device

Country Status (18)

Country Link
JP (1) JPS6412106B2 (xx)
KR (1) KR830002293B1 (xx)
AU (1) AU529702B2 (xx)
CH (1) CH659151A5 (xx)
DD (1) DD147897A5 (xx)
ES (1) ES487066A1 (xx)
FR (1) FR2445026A1 (xx)
GB (1) GB2049283B (xx)
HU (1) HU181030B (xx)
IE (1) IE48892B1 (xx)
IL (1) IL58970A (xx)
IN (1) IN153497B (xx)
IT (1) IT1126603B (xx)
NL (1) NL7920184A (xx)
PL (1) PL220494A1 (xx)
SE (1) SE446139B (xx)
SG (1) SG32884G (xx)
WO (1) WO1980001337A1 (xx)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242697A (en) * 1979-03-14 1980-12-30 Bell Telephone Laboratories, Incorporated Dielectrically isolated high voltage semiconductor devices
CA1145057A (en) * 1979-12-28 1983-04-19 Adrian R. Hartman High voltage solid-state switch
WO1982003497A1 (en) * 1981-03-27 1982-10-14 Western Electric Co Gated diode switch
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1547287A (fr) * 1966-12-19 1968-11-22 Lucas Industries Ltd Diode semiconductrice
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
JPS4933432B1 (xx) * 1968-12-20 1974-09-06
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5032942U (xx) * 1973-07-23 1975-04-10
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same

Also Published As

Publication number Publication date
SE446139B (sv) 1986-08-11
IL58970A0 (en) 1980-03-31
AU529702B2 (en) 1983-06-16
JPS55501079A (xx) 1980-12-04
IE48892B1 (en) 1985-06-12
FR2445026B1 (xx) 1983-08-19
KR830002293B1 (ko) 1983-10-21
SE8005703L (sv) 1980-08-13
SG32884G (en) 1985-02-08
NL7920184A (nl) 1980-10-31
CH659151A5 (de) 1986-12-31
AU5386679A (en) 1980-06-26
WO1980001337A1 (en) 1980-06-26
IT1126603B (it) 1986-05-21
IT7928206A0 (it) 1979-12-19
IN153497B (xx) 1984-07-21
GB2049283B (en) 1983-07-27
PL220494A1 (xx) 1980-09-08
JPS6412106B2 (xx) 1989-02-28
GB2049283A (en) 1980-12-17
ES487066A1 (es) 1980-09-16
KR830001743A (ko) 1983-05-18
FR2445026A1 (fr) 1980-07-18
IE792474L (en) 1980-06-20
DD147897A5 (de) 1981-04-22
HU181030B (en) 1983-05-30

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