FR2445026A1 - Interrupteur a l'etat solide et a isolation dielectrique - Google Patents

Interrupteur a l'etat solide et a isolation dielectrique

Info

Publication number
FR2445026A1
FR2445026A1 FR7930946A FR7930946A FR2445026A1 FR 2445026 A1 FR2445026 A1 FR 2445026A1 FR 7930946 A FR7930946 A FR 7930946A FR 7930946 A FR7930946 A FR 7930946A FR 2445026 A1 FR2445026 A1 FR 2445026A1
Authority
FR
France
Prior art keywords
solid state
type
insulated switch
region
dielectric insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7930946A
Other languages
English (en)
Other versions
FR2445026B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2445026A1 publication Critical patent/FR2445026A1/fr
Application granted granted Critical
Publication of FR2445026B1 publication Critical patent/FR2445026B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)

Abstract

L'invention concerne les dispositifs de commutation à l'état solide. Un interrupteur à l'état solide à haute tension comprend essentiellement un corps semi-conducteur 16 de type p qui est séparé d'un substrat semi-conducteur 12 par une couche diélectrique 14. Une région d'anode 18 de type p+, une région de cathode 24 de type n+ et une région d'électrode de commande 20 de type n+ sont situées au niveau d'une surface principale commune du corps semi-conducteur. Application à la commutation téléphonique.
FR7930946A 1978-12-20 1979-12-18 Interrupteur a l'etat solide et a isolation dielectrique Granted FR2445026A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US97205678A 1978-12-20 1978-12-20
US97202278A 1978-12-20 1978-12-20
US97202178A 1978-12-28 1978-12-28

Publications (2)

Publication Number Publication Date
FR2445026A1 true FR2445026A1 (fr) 1980-07-18
FR2445026B1 FR2445026B1 (fr) 1983-08-19

Family

ID=27420763

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7930946A Granted FR2445026A1 (fr) 1978-12-20 1979-12-18 Interrupteur a l'etat solide et a isolation dielectrique

Country Status (18)

Country Link
JP (1) JPS6412106B2 (fr)
KR (1) KR830002293B1 (fr)
AU (1) AU529702B2 (fr)
CH (1) CH659151A5 (fr)
DD (1) DD147897A5 (fr)
ES (1) ES487066A1 (fr)
FR (1) FR2445026A1 (fr)
GB (1) GB2049283B (fr)
HU (1) HU181030B (fr)
IE (1) IE48892B1 (fr)
IL (1) IL58970A (fr)
IN (1) IN153497B (fr)
IT (1) IT1126603B (fr)
NL (1) NL7920184A (fr)
PL (1) PL220494A1 (fr)
SE (1) SE446139B (fr)
SG (1) SG32884G (fr)
WO (1) WO1980001337A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242697A (en) * 1979-03-14 1980-12-30 Bell Telephone Laboratories, Incorporated Dielectrically isolated high voltage semiconductor devices
CA1145057A (fr) * 1979-12-28 1983-04-19 Adrian R. Hartman Commutateur a semiconducteur pour hautes tensions
EP0075589B1 (fr) * 1981-03-27 1987-01-14 Western Electric Company, Incorporated Commutateur a diode pourvue d'une porte
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1547287A (fr) * 1966-12-19 1968-11-22 Lucas Industries Ltd Diode semiconductrice
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
DE2433981A1 (de) * 1973-07-23 1975-02-13 Hitachi Ltd Halbleitersprechpfadschalter
US4074293A (en) * 1971-08-26 1978-02-14 Dionics, Inc. High voltage pn junction and semiconductive devices employing same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933432B1 (fr) * 1968-12-20 1974-09-06
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1547287A (fr) * 1966-12-19 1968-11-22 Lucas Industries Ltd Diode semiconductrice
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US4074293A (en) * 1971-08-26 1978-02-14 Dionics, Inc. High voltage pn junction and semiconductive devices employing same
DE2433981A1 (de) * 1973-07-23 1975-02-13 Hitachi Ltd Halbleitersprechpfadschalter

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/66 *

Also Published As

Publication number Publication date
ES487066A1 (es) 1980-09-16
JPS55501079A (fr) 1980-12-04
HU181030B (en) 1983-05-30
JPS6412106B2 (fr) 1989-02-28
NL7920184A (nl) 1980-10-31
KR830002293B1 (ko) 1983-10-21
WO1980001337A1 (fr) 1980-06-26
AU529702B2 (en) 1983-06-16
KR830001743A (ko) 1983-05-18
IL58970A0 (en) 1980-03-31
IE792474L (en) 1980-06-20
IN153497B (fr) 1984-07-21
IT1126603B (it) 1986-05-21
GB2049283B (en) 1983-07-27
IE48892B1 (en) 1985-06-12
IL58970A (en) 1982-07-30
GB2049283A (en) 1980-12-17
IT7928206A0 (it) 1979-12-19
FR2445026B1 (fr) 1983-08-19
SE8005703L (sv) 1980-08-13
PL220494A1 (fr) 1980-09-08
SE446139B (sv) 1986-08-11
SG32884G (en) 1985-02-08
AU5386679A (en) 1980-06-26
DD147897A5 (de) 1981-04-22
CH659151A5 (de) 1986-12-31

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Legal Events

Date Code Title Description
ST Notification of lapse