BR7906725A - Comutador semicondutor fotoativado - Google Patents

Comutador semicondutor fotoativado

Info

Publication number
BR7906725A
BR7906725A BR7906725A BR7906725A BR7906725A BR 7906725 A BR7906725 A BR 7906725A BR 7906725 A BR7906725 A BR 7906725A BR 7906725 A BR7906725 A BR 7906725A BR 7906725 A BR7906725 A BR 7906725A
Authority
BR
Brazil
Prior art keywords
semiconductor switch
photoactivated semiconductor
photoactivated
switch
semiconductor
Prior art date
Application number
BR7906725A
Other languages
English (en)
Inventor
D Page
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BR7906725A publication Critical patent/BR7906725A/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
BR7906725A 1978-10-18 1979-10-18 Comutador semicondutor fotoativado BR7906725A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US95242978A 1978-10-18 1978-10-18

Publications (1)

Publication Number Publication Date
BR7906725A true BR7906725A (pt) 1980-06-17

Family

ID=25492902

Family Applications (1)

Application Number Title Priority Date Filing Date
BR7906725A BR7906725A (pt) 1978-10-18 1979-10-18 Comutador semicondutor fotoativado

Country Status (8)

Country Link
JP (1) JPS5558582A (pt)
BE (1) BE879496A (pt)
BR (1) BR7906725A (pt)
CA (1) CA1157136A (pt)
DE (1) DE2942159A1 (pt)
FR (1) FR2439479A1 (pt)
GB (1) GB2034518B (pt)
IN (1) IN151851B (pt)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132471U (pt) * 1981-02-10 1982-08-18
EP0072221B1 (en) * 1981-08-07 1987-11-11 The British Petroleum Company p.l.c. Non-volatile electrically programmable memory device
GB2127221B (en) * 1982-09-06 1986-03-12 Secr Defence Radiation-controlled electrical switches
DD227311A1 (de) * 1984-09-17 1985-09-11 Adw Ddr Optoelektronischer festkoerperschalter
DE3715674A1 (de) * 1987-05-11 1988-12-01 Messerschmitt Boelkow Blohm Halbleiter mit kapazitiver auslese der ladungstraeger und integrierter gleichspannungszufuehrung
US4782222A (en) * 1987-09-03 1988-11-01 Power Spectra Bulk avalanche semiconductor switch using partial light penetration and inducing field compression
CN108039363A (zh) * 2017-11-30 2018-05-15 电子科技大学 光驱动SiC/GaN基半导体器件及其制作工艺

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424910A (en) * 1965-04-19 1969-01-28 Hughes Aircraft Co Switching circuit using a two-carrier negative resistance device
GB1072080A (en) * 1965-12-31 1967-06-14 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices

Also Published As

Publication number Publication date
GB2034518A (en) 1980-06-04
BE879496A (fr) 1980-04-18
FR2439479A1 (fr) 1980-05-16
IN151851B (pt) 1983-08-20
DE2942159A1 (de) 1980-04-30
JPS5558582A (en) 1980-05-01
CA1157136A (en) 1983-11-15
GB2034518B (en) 1983-06-29
FR2439479B1 (pt) 1985-03-01

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