CA1157136A - Light-activated p-i-n switch - Google Patents

Light-activated p-i-n switch

Info

Publication number
CA1157136A
CA1157136A CA000337859A CA337859A CA1157136A CA 1157136 A CA1157136 A CA 1157136A CA 000337859 A CA000337859 A CA 000337859A CA 337859 A CA337859 A CA 337859A CA 1157136 A CA1157136 A CA 1157136A
Authority
CA
Canada
Prior art keywords
region
impurity
switch
light
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000337859A
Other languages
English (en)
French (fr)
Inventor
Derrick J. Page
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of CA1157136A publication Critical patent/CA1157136A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
CA000337859A 1978-10-18 1979-10-17 Light-activated p-i-n switch Expired CA1157136A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US95242978A 1978-10-18 1978-10-18
US952,429 1978-10-18

Publications (1)

Publication Number Publication Date
CA1157136A true CA1157136A (en) 1983-11-15

Family

ID=25492902

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000337859A Expired CA1157136A (en) 1978-10-18 1979-10-17 Light-activated p-i-n switch

Country Status (8)

Country Link
JP (1) JPS5558582A (pt)
BE (1) BE879496A (pt)
BR (1) BR7906725A (pt)
CA (1) CA1157136A (pt)
DE (1) DE2942159A1 (pt)
FR (1) FR2439479A1 (pt)
GB (1) GB2034518B (pt)
IN (1) IN151851B (pt)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132471U (pt) * 1981-02-10 1982-08-18
DE3277665D1 (en) * 1981-08-07 1987-12-17 British Petroleum Co Plc Non-volatile electrically programmable memory device
GB2127221B (en) * 1982-09-06 1986-03-12 Secr Defence Radiation-controlled electrical switches
DD227311A1 (de) * 1984-09-17 1985-09-11 Adw Ddr Optoelektronischer festkoerperschalter
DE3715674A1 (de) * 1987-05-11 1988-12-01 Messerschmitt Boelkow Blohm Halbleiter mit kapazitiver auslese der ladungstraeger und integrierter gleichspannungszufuehrung
US4782222A (en) * 1987-09-03 1988-11-01 Power Spectra Bulk avalanche semiconductor switch using partial light penetration and inducing field compression
CN108039363A (zh) * 2017-11-30 2018-05-15 电子科技大学 光驱动SiC/GaN基半导体器件及其制作工艺

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424910A (en) * 1965-04-19 1969-01-28 Hughes Aircraft Co Switching circuit using a two-carrier negative resistance device
GB1072080A (en) * 1965-12-31 1967-06-14 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices

Also Published As

Publication number Publication date
FR2439479A1 (fr) 1980-05-16
DE2942159A1 (de) 1980-04-30
JPS5558582A (en) 1980-05-01
BE879496A (fr) 1980-04-18
GB2034518B (en) 1983-06-29
IN151851B (pt) 1983-08-20
FR2439479B1 (pt) 1985-03-01
BR7906725A (pt) 1980-06-17
GB2034518A (en) 1980-06-04

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Legal Events

Date Code Title Description
MKEX Expiry