BE879496A - Dispositif de commutation semiconducteur de type p-i-n photoactive - Google Patents

Dispositif de commutation semiconducteur de type p-i-n photoactive

Info

Publication number
BE879496A
BE879496A BE0/197712A BE197712A BE879496A BE 879496 A BE879496 A BE 879496A BE 0/197712 A BE0/197712 A BE 0/197712A BE 197712 A BE197712 A BE 197712A BE 879496 A BE879496 A BE 879496A
Authority
BE
Belgium
Prior art keywords
switching device
semiconductor switching
photoactive semiconductor
photoactive
switching
Prior art date
Application number
BE0/197712A
Other languages
English (en)
Inventor
D Page
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BE879496A publication Critical patent/BE879496A/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
  • Led Devices (AREA)
BE0/197712A 1978-10-18 1979-10-18 Dispositif de commutation semiconducteur de type p-i-n photoactive BE879496A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US95242978A 1978-10-18 1978-10-18

Publications (1)

Publication Number Publication Date
BE879496A true BE879496A (fr) 1980-04-18

Family

ID=25492902

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/197712A BE879496A (fr) 1978-10-18 1979-10-18 Dispositif de commutation semiconducteur de type p-i-n photoactive

Country Status (8)

Country Link
JP (1) JPS5558582A (fr)
BE (1) BE879496A (fr)
BR (1) BR7906725A (fr)
CA (1) CA1157136A (fr)
DE (1) DE2942159A1 (fr)
FR (1) FR2439479A1 (fr)
GB (1) GB2034518B (fr)
IN (1) IN151851B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132471U (fr) * 1981-02-10 1982-08-18
JPS5890790A (ja) * 1981-08-07 1983-05-30 ザ ブリテイッシュ ペトロレアム カンパニ− ピ−.エル.シ− 半導体装置
GB2127221B (en) * 1982-09-06 1986-03-12 Secr Defence Radiation-controlled electrical switches
DD227311A1 (de) * 1984-09-17 1985-09-11 Adw Ddr Optoelektronischer festkoerperschalter
DE3715674A1 (de) * 1987-05-11 1988-12-01 Messerschmitt Boelkow Blohm Halbleiter mit kapazitiver auslese der ladungstraeger und integrierter gleichspannungszufuehrung
US4782222A (en) * 1987-09-03 1988-11-01 Power Spectra Bulk avalanche semiconductor switch using partial light penetration and inducing field compression
CN108039363A (zh) * 2017-11-30 2018-05-15 电子科技大学 光驱动SiC/GaN基半导体器件及其制作工艺

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424910A (en) * 1965-04-19 1969-01-28 Hughes Aircraft Co Switching circuit using a two-carrier negative resistance device
GB1072080A (en) * 1965-12-31 1967-06-14 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices

Also Published As

Publication number Publication date
FR2439479B1 (fr) 1985-03-01
CA1157136A (fr) 1983-11-15
GB2034518B (en) 1983-06-29
IN151851B (fr) 1983-08-20
BR7906725A (pt) 1980-06-17
GB2034518A (en) 1980-06-04
JPS5558582A (en) 1980-05-01
DE2942159A1 (de) 1980-04-30
FR2439479A1 (fr) 1980-05-16

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTINGHOUSE ELECTRIC CORP.

Effective date: 19871031