JPS5558582A - Light drive semiconductor switch - Google Patents

Light drive semiconductor switch

Info

Publication number
JPS5558582A
JPS5558582A JP13367479A JP13367479A JPS5558582A JP S5558582 A JPS5558582 A JP S5558582A JP 13367479 A JP13367479 A JP 13367479A JP 13367479 A JP13367479 A JP 13367479A JP S5558582 A JPS5558582 A JP S5558582A
Authority
JP
Japan
Prior art keywords
semiconductor switch
light drive
drive semiconductor
light
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13367479A
Other languages
English (en)
Inventor
Jiyon Peiji Deritsuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of JPS5558582A publication Critical patent/JPS5558582A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
  • Led Devices (AREA)
JP13367479A 1978-10-18 1979-10-18 Light drive semiconductor switch Pending JPS5558582A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US95242978A 1978-10-18 1978-10-18

Publications (1)

Publication Number Publication Date
JPS5558582A true JPS5558582A (en) 1980-05-01

Family

ID=25492902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13367479A Pending JPS5558582A (en) 1978-10-18 1979-10-18 Light drive semiconductor switch

Country Status (8)

Country Link
JP (1) JPS5558582A (ja)
BE (1) BE879496A (ja)
BR (1) BR7906725A (ja)
CA (1) CA1157136A (ja)
DE (1) DE2942159A1 (ja)
FR (1) FR2439479A1 (ja)
GB (1) GB2034518B (ja)
IN (1) IN151851B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132471U (ja) * 1981-02-10 1982-08-18
CN108039363A (zh) * 2017-11-30 2018-05-15 电子科技大学 光驱动SiC/GaN基半导体器件及其制作工艺

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3277665D1 (en) * 1981-08-07 1987-12-17 British Petroleum Co Plc Non-volatile electrically programmable memory device
GB2127221B (en) * 1982-09-06 1986-03-12 Secr Defence Radiation-controlled electrical switches
DD227311A1 (de) * 1984-09-17 1985-09-11 Adw Ddr Optoelektronischer festkoerperschalter
DE3715674A1 (de) * 1987-05-11 1988-12-01 Messerschmitt Boelkow Blohm Halbleiter mit kapazitiver auslese der ladungstraeger und integrierter gleichspannungszufuehrung
US4782222A (en) * 1987-09-03 1988-11-01 Power Spectra Bulk avalanche semiconductor switch using partial light penetration and inducing field compression

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424910A (en) * 1965-04-19 1969-01-28 Hughes Aircraft Co Switching circuit using a two-carrier negative resistance device
GB1072080A (en) * 1965-12-31 1967-06-14 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132471U (ja) * 1981-02-10 1982-08-18
CN108039363A (zh) * 2017-11-30 2018-05-15 电子科技大学 光驱动SiC/GaN基半导体器件及其制作工艺

Also Published As

Publication number Publication date
IN151851B (ja) 1983-08-20
DE2942159A1 (de) 1980-04-30
BR7906725A (pt) 1980-06-17
BE879496A (fr) 1980-04-18
GB2034518B (en) 1983-06-29
FR2439479A1 (fr) 1980-05-16
CA1157136A (en) 1983-11-15
GB2034518A (en) 1980-06-04
FR2439479B1 (ja) 1985-03-01

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