GB2127221B - Radiation-controlled electrical switches - Google Patents
Radiation-controlled electrical switchesInfo
- Publication number
- GB2127221B GB2127221B GB08322918A GB8322918A GB2127221B GB 2127221 B GB2127221 B GB 2127221B GB 08322918 A GB08322918 A GB 08322918A GB 8322918 A GB8322918 A GB 8322918A GB 2127221 B GB2127221 B GB 2127221B
- Authority
- GB
- United Kingdom
- Prior art keywords
- radiation
- optically active
- active material
- electrical switches
- controlled electrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005855 radiation Effects 0.000 title abstract 4
- 239000011149 active material Substances 0.000 abstract 5
- SZVJSHCCFOBDDC-UHFFFAOYSA-N ferrosoferric oxide Chemical compound O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 abstract 2
- 229910016021 MoTe2 Inorganic materials 0.000 abstract 1
- 230000005670 electromagnetic radiation Effects 0.000 abstract 1
- 229910052953 millerite Inorganic materials 0.000 abstract 1
- HFLAMWCKUFHSAZ-UHFFFAOYSA-N niobium dioxide Inorganic materials O=[Nb]=O HFLAMWCKUFHSAZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/257—Multistable switching devices, e.g. memristors having switching assisted by radiation or particle beam, e.g. optically controlled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
Landscapes
- Manufacturing Of Printed Circuit Boards (AREA)
- Lasers (AREA)
Abstract
A radiation-controlled switch (6) includes an optically active material (12), which is preferably a 1000 ANGSTROM thick VO2 layer on a substrate (10), the optically active material having electrically mutually isolated contacts (14, 16) formed thereon, and being associated with a radiation source (8), which may be a laser, directing electromagnetic radiation at the optically active material wherein on incidence of the radiation from the source, at least part of the optically active material undergoes a phase change from a non- metallic to a metallic phase and establishes electrical contact between at least two of the contacts. Other optically active materials used are NbO2, Fe3O4, NiS, FeS, V2O3, V8O15 or MoTe2. <IMAGE>
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08322918A GB2127221B (en) | 1982-09-06 | 1983-08-25 | Radiation-controlled electrical switches |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8225306 | 1982-09-06 | ||
GB08322918A GB2127221B (en) | 1982-09-06 | 1983-08-25 | Radiation-controlled electrical switches |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8322918D0 GB8322918D0 (en) | 1983-09-28 |
GB2127221A GB2127221A (en) | 1984-04-04 |
GB2127221B true GB2127221B (en) | 1986-03-12 |
Family
ID=26283757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08322918A Expired GB2127221B (en) | 1982-09-06 | 1983-08-25 | Radiation-controlled electrical switches |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2127221B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6967344B2 (en) * | 2003-03-10 | 2005-11-22 | Energy Conversion Devices, Inc. | Multi-terminal chalcogenide switching devices |
KR100825760B1 (en) * | 2006-06-02 | 2008-04-29 | 한국전자통신연구원 | Abrupt metal-insulator transitionMIT device, MIT sensor using the same abrupt MIT device, and alarming apparatus and secondary battery anti-explosion circuit comprising the same MIT sensor |
DE102011056951A1 (en) * | 2011-12-22 | 2013-06-27 | Helmholtz-Zentrum Dresden - Rossendorf E.V. | Thermochromic single and multi-component system, its preparation and use |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL280435A (en) * | 1962-07-02 | |||
JPS5143133A (en) * | 1974-09-23 | 1976-04-13 | Gen Electric | Senkodenkyuno anteikahoshasuitsuchi |
US4085321A (en) * | 1976-06-08 | 1978-04-18 | Xerox Corporation | Multi-phase photoactivated switch |
FR2401556A1 (en) * | 1977-08-25 | 1979-03-23 | Comp Generale Electricite | PROCESS FOR CREATING AN ELECTRIC PULSE WITH A PREDETERMINED PROFILE AND APPLICATION TO CUTTING A LASER PULSE |
US4216485A (en) * | 1978-09-15 | 1980-08-05 | Westinghouse Electric Corp. | Optical transistor structure |
GB2034518B (en) * | 1978-10-18 | 1983-06-29 | Westinghouse Electric Corp | Light activated p-i-n switch |
US4218618A (en) * | 1979-02-21 | 1980-08-19 | The University Of Rochester | Apparatus for switching high voltage pulses with picosecond accuracy |
GB2078440B (en) * | 1980-03-31 | 1984-04-18 | Nippon Telegraph & Telephone | An optoelectronic switch |
-
1983
- 1983-08-25 GB GB08322918A patent/GB2127221B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB8322918D0 (en) | 1983-09-28 |
GB2127221A (en) | 1984-04-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19980825 |