FR2556504B1 - Dispositif de commutation a semi-conducteur - Google Patents
Dispositif de commutation a semi-conducteurInfo
- Publication number
- FR2556504B1 FR2556504B1 FR8418935A FR8418935A FR2556504B1 FR 2556504 B1 FR2556504 B1 FR 2556504B1 FR 8418935 A FR8418935 A FR 8418935A FR 8418935 A FR8418935 A FR 8418935A FR 2556504 B1 FR2556504 B1 FR 2556504B1
- Authority
- FR
- France
- Prior art keywords
- switching device
- semiconductor switching
- semiconductor
- switching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Cold Cathode And The Manufacture (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB838333130A GB8333130D0 (en) | 1983-12-12 | 1983-12-12 | Semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2556504A1 FR2556504A1 (fr) | 1985-06-14 |
| FR2556504B1 true FR2556504B1 (fr) | 1988-08-26 |
Family
ID=10553189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8418935A Expired FR2556504B1 (fr) | 1983-12-12 | 1984-12-11 | Dispositif de commutation a semi-conducteur |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4633279A (fr) |
| JP (1) | JPS60186058A (fr) |
| FR (1) | FR2556504B1 (fr) |
| GB (2) | GB8333130D0 (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0712100B2 (ja) * | 1985-03-25 | 1995-02-08 | 株式会社日立製作所 | 半導体発光素子 |
| US4962304A (en) * | 1988-12-23 | 1990-10-09 | Rockwell International Corporation | Intrinsic impurity band conduction detectors |
| SE468694B (sv) * | 1991-06-28 | 1993-03-01 | Ericsson Telefon Ab L M | Kvantvaagledande elektronisk omkopplare |
| US5554882A (en) * | 1993-11-05 | 1996-09-10 | The Boeing Company | Integrated trigger injector for avalanche semiconductor switch devices |
| US6847045B2 (en) * | 2001-10-12 | 2005-01-25 | Hewlett-Packard Development Company, L.P. | High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4032961A (en) * | 1974-10-16 | 1977-06-28 | General Electric Company | Gate modulated bipolar transistor |
| US4107721A (en) * | 1977-01-26 | 1978-08-15 | Bell Telephone Laboratories, Incorporated | Phototransistor |
| US4352117A (en) * | 1980-06-02 | 1982-09-28 | International Business Machines Corporation | Electron source |
| GB2109159B (en) * | 1981-11-06 | 1985-05-30 | Philips Electronic Associated | Semiconductor electron source for display tubes and other equipment |
| US4449140A (en) * | 1981-12-24 | 1984-05-15 | National Research Development Corporation | Semi-conductor barrier switching devices |
| GB2128026B (en) * | 1982-10-01 | 1986-03-26 | Gen Electric Co Plc | Transistors |
-
1983
- 1983-12-12 GB GB838333130A patent/GB8333130D0/en active Pending
-
1984
- 1984-11-21 GB GB08429426A patent/GB2151397B/en not_active Expired
- 1984-12-06 US US06/678,664 patent/US4633279A/en not_active Expired - Fee Related
- 1984-12-10 JP JP59260606A patent/JPS60186058A/ja active Pending
- 1984-12-11 FR FR8418935A patent/FR2556504B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB8429426D0 (en) | 1985-01-03 |
| GB2151397B (en) | 1987-05-20 |
| JPS60186058A (ja) | 1985-09-21 |
| GB8333130D0 (en) | 1984-01-18 |
| US4633279A (en) | 1986-12-30 |
| GB2151397A (en) | 1985-07-17 |
| FR2556504A1 (fr) | 1985-06-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |