FR2439479A1 - Dispositif de commutation semi-conducteur de type p-i-n photoactive - Google Patents

Dispositif de commutation semi-conducteur de type p-i-n photoactive

Info

Publication number
FR2439479A1
FR2439479A1 FR7925786A FR7925786A FR2439479A1 FR 2439479 A1 FR2439479 A1 FR 2439479A1 FR 7925786 A FR7925786 A FR 7925786A FR 7925786 A FR7925786 A FR 7925786A FR 2439479 A1 FR2439479 A1 FR 2439479A1
Authority
FR
France
Prior art keywords
photoactive
switching device
type semiconductor
region
semiconductor switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7925786A
Other languages
English (en)
French (fr)
Other versions
FR2439479B1 (pt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2439479A1 publication Critical patent/FR2439479A1/fr
Application granted granted Critical
Publication of FR2439479B1 publication Critical patent/FR2439479B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
  • Led Devices (AREA)
FR7925786A 1978-10-18 1979-10-17 Dispositif de commutation semi-conducteur de type p-i-n photoactive Granted FR2439479A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US95242978A 1978-10-18 1978-10-18

Publications (2)

Publication Number Publication Date
FR2439479A1 true FR2439479A1 (fr) 1980-05-16
FR2439479B1 FR2439479B1 (pt) 1985-03-01

Family

ID=25492902

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7925786A Granted FR2439479A1 (fr) 1978-10-18 1979-10-17 Dispositif de commutation semi-conducteur de type p-i-n photoactive

Country Status (8)

Country Link
JP (1) JPS5558582A (pt)
BE (1) BE879496A (pt)
BR (1) BR7906725A (pt)
CA (1) CA1157136A (pt)
DE (1) DE2942159A1 (pt)
FR (1) FR2439479A1 (pt)
GB (1) GB2034518B (pt)
IN (1) IN151851B (pt)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2570515A1 (fr) * 1984-09-17 1986-03-21 Zeiss Jena Veb Carl Commutateur a corps solide pour electro-optique
EP0379521A1 (en) * 1987-09-03 1990-08-01 Power Spectra Inc AVALANCHE LOCKING SWITCH WITH FIELD COMPRESSION.

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132471U (pt) * 1981-02-10 1982-08-18
DE3277665D1 (en) * 1981-08-07 1987-12-17 British Petroleum Co Plc Non-volatile electrically programmable memory device
GB2127221B (en) * 1982-09-06 1986-03-12 Secr Defence Radiation-controlled electrical switches
DE3715674A1 (de) * 1987-05-11 1988-12-01 Messerschmitt Boelkow Blohm Halbleiter mit kapazitiver auslese der ladungstraeger und integrierter gleichspannungszufuehrung
CN108039363A (zh) * 2017-11-30 2018-05-15 电子科技大学 光驱动SiC/GaN基半导体器件及其制作工艺

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424910A (en) * 1965-04-19 1969-01-28 Hughes Aircraft Co Switching circuit using a two-carrier negative resistance device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1072080A (en) * 1965-12-31 1967-06-14 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424910A (en) * 1965-04-19 1969-01-28 Hughes Aircraft Co Switching circuit using a two-carrier negative resistance device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/66 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2570515A1 (fr) * 1984-09-17 1986-03-21 Zeiss Jena Veb Carl Commutateur a corps solide pour electro-optique
EP0379521A1 (en) * 1987-09-03 1990-08-01 Power Spectra Inc AVALANCHE LOCKING SWITCH WITH FIELD COMPRESSION.
EP0379521A4 (en) * 1987-09-03 1991-04-17 Power Spectra, Inc. Bulk avalanche semiconductor switch using field compression

Also Published As

Publication number Publication date
GB2034518A (en) 1980-06-04
FR2439479B1 (pt) 1985-03-01
IN151851B (pt) 1983-08-20
BE879496A (fr) 1980-04-18
BR7906725A (pt) 1980-06-17
JPS5558582A (en) 1980-05-01
DE2942159A1 (de) 1980-04-30
CA1157136A (en) 1983-11-15
GB2034518B (en) 1983-06-29

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Legal Events

Date Code Title Description
ST Notification of lapse