JPS54140887A - Photoelectric semiconductor converter element - Google Patents

Photoelectric semiconductor converter element

Info

Publication number
JPS54140887A
JPS54140887A JP4840078A JP4840078A JPS54140887A JP S54140887 A JPS54140887 A JP S54140887A JP 4840078 A JP4840078 A JP 4840078A JP 4840078 A JP4840078 A JP 4840078A JP S54140887 A JPS54140887 A JP S54140887A
Authority
JP
Japan
Prior art keywords
converter element
semiconductor
electrode
cuinse
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4840078A
Other languages
Japanese (ja)
Other versions
JPS5535878B2 (en
Inventor
Akinori Katsui
Takashi Andou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4840078A priority Critical patent/JPS54140887A/en
Publication of JPS54140887A publication Critical patent/JPS54140887A/en
Publication of JPS5535878B2 publication Critical patent/JPS5535878B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To obtain a photoelectric converter element which is highly sensitive to light of 0.9 to 1.4μm, by providing a semiconductor layer, made with indium selenide and arranged to form a PN junction different with a semiconductor compound mainly made with CuInSe2, onto the compound.
CONSTITUTION: On semiconductor substrate 1 made with P-type CuInSe2 grown in a solution of excessive Se density, semiconductor layer 3 of N-type indium selenide of In2Se to form a different kind of PN junction 2 is formed by vapor-deposition; electrode 4 if In is made in ohmic contact with the top of semiconductor 3, and electrode 5 made of transparent conductive layer 5a of Au and conductive layer 5b of silver is fitted to its reverse. This photoelectric converter element has a high conversion function in the wavelength range from 1.0 to 1.3μm.
COPYRIGHT: (C)1979,JPO&Japio
JP4840078A 1978-04-24 1978-04-24 Photoelectric semiconductor converter element Granted JPS54140887A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4840078A JPS54140887A (en) 1978-04-24 1978-04-24 Photoelectric semiconductor converter element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4840078A JPS54140887A (en) 1978-04-24 1978-04-24 Photoelectric semiconductor converter element

Publications (2)

Publication Number Publication Date
JPS54140887A true JPS54140887A (en) 1979-11-01
JPS5535878B2 JPS5535878B2 (en) 1980-09-17

Family

ID=12802244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4840078A Granted JPS54140887A (en) 1978-04-24 1978-04-24 Photoelectric semiconductor converter element

Country Status (1)

Country Link
JP (1) JPS54140887A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4335266A (en) * 1980-12-31 1982-06-15 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
USRE31968E (en) * 1980-12-31 1985-08-13 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
CN102445223A (en) * 2011-09-23 2012-05-09 苏州大学 Photoelectric sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4335266A (en) * 1980-12-31 1982-06-15 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
USRE31968E (en) * 1980-12-31 1985-08-13 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
CN102445223A (en) * 2011-09-23 2012-05-09 苏州大学 Photoelectric sensor

Also Published As

Publication number Publication date
JPS5535878B2 (en) 1980-09-17

Similar Documents

Publication Publication Date Title
JPS5980978A (en) Infrared detector
EP0142316A3 (en) Improved p-i-n- and avalanche photodiodes
JPS54101688A (en) Optical semiconductor device
US4633287A (en) Semiconductor photoelectric conversion device
JPS5513907A (en) Avalnche photo diode with semiconductor hetero construction
GB1504854A (en) Photodetectors and thin film photovoltaic arrays
JPS54140887A (en) Photoelectric semiconductor converter element
FR2371064A2 (en) SEMICONDUCTOR DEVICE
GB2206447A (en) Lensed photodetector
JPS5356988A (en) Photovoltaic element
JPS54103630A (en) Solid state pickup device
JPS5516408A (en) Detector for multiple light communication
JPS5587007A (en) Semiconductor photo position detector
JPS5732683A (en) Semiconductor device
JPS5766666A (en) Solid state image pickup device
JPS57183076A (en) Field control type optical semiconductor device
JPS52124888A (en) Production of solar battery
JPS5730381A (en) Schottky type photodetector
JPS63161680A (en) Semiconductor photodetector
JPS54102992A (en) Photoelectric converting device
JPS5516560A (en) Solid-state pickup unit
JPS5563885A (en) Photovoltaic device
JPS6015005B2 (en) Photovoltaic infrared sensing element
JPH04237170A (en) Semiconductor photoelectric conversion element
JPS5779685A (en) Light emitting diode device