JPS54140887A - Photoelectric semiconductor converter element - Google Patents
Photoelectric semiconductor converter elementInfo
- Publication number
- JPS54140887A JPS54140887A JP4840078A JP4840078A JPS54140887A JP S54140887 A JPS54140887 A JP S54140887A JP 4840078 A JP4840078 A JP 4840078A JP 4840078 A JP4840078 A JP 4840078A JP S54140887 A JPS54140887 A JP S54140887A
- Authority
- JP
- Japan
- Prior art keywords
- converter element
- semiconductor
- electrode
- cuinse
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To obtain a photoelectric converter element which is highly sensitive to light of 0.9 to 1.4μm, by providing a semiconductor layer, made with indium selenide and arranged to form a PN junction different with a semiconductor compound mainly made with CuInSe2, onto the compound.
CONSTITUTION: On semiconductor substrate 1 made with P-type CuInSe2 grown in a solution of excessive Se density, semiconductor layer 3 of N-type indium selenide of In2Se to form a different kind of PN junction 2 is formed by vapor-deposition; electrode 4 if In is made in ohmic contact with the top of semiconductor 3, and electrode 5 made of transparent conductive layer 5a of Au and conductive layer 5b of silver is fitted to its reverse. This photoelectric converter element has a high conversion function in the wavelength range from 1.0 to 1.3μm.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4840078A JPS54140887A (en) | 1978-04-24 | 1978-04-24 | Photoelectric semiconductor converter element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4840078A JPS54140887A (en) | 1978-04-24 | 1978-04-24 | Photoelectric semiconductor converter element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54140887A true JPS54140887A (en) | 1979-11-01 |
JPS5535878B2 JPS5535878B2 (en) | 1980-09-17 |
Family
ID=12802244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4840078A Granted JPS54140887A (en) | 1978-04-24 | 1978-04-24 | Photoelectric semiconductor converter element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54140887A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4335266A (en) * | 1980-12-31 | 1982-06-15 | The Boeing Company | Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2 |
USRE31968E (en) * | 1980-12-31 | 1985-08-13 | The Boeing Company | Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2 |
CN102445223A (en) * | 2011-09-23 | 2012-05-09 | 苏州大学 | Photoelectric sensor |
-
1978
- 1978-04-24 JP JP4840078A patent/JPS54140887A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4335266A (en) * | 1980-12-31 | 1982-06-15 | The Boeing Company | Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2 |
USRE31968E (en) * | 1980-12-31 | 1985-08-13 | The Boeing Company | Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2 |
CN102445223A (en) * | 2011-09-23 | 2012-05-09 | 苏州大学 | Photoelectric sensor |
Also Published As
Publication number | Publication date |
---|---|
JPS5535878B2 (en) | 1980-09-17 |
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