CN102445223A - Photoelectric sensor - Google Patents
Photoelectric sensor Download PDFInfo
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- CN102445223A CN102445223A CN2011102860583A CN201110286058A CN102445223A CN 102445223 A CN102445223 A CN 102445223A CN 2011102860583 A CN2011102860583 A CN 2011102860583A CN 201110286058 A CN201110286058 A CN 201110286058A CN 102445223 A CN102445223 A CN 102445223A
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- photoelectric sensor
- selenizings
- activated element
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Abstract
The invention discloses a photoelectric sensor. A light-sensitive element of the photoelectric sensor is made from nano diindium triselenide. The nano diindium triselenide has a very small size, so that the power consumption is very low. Meanwhile, as proved by tests, the light-sensitive element has relatively high sensitivity, relatively wide temperature adaptation and relatively wide spectral response.
Description
Technical field
The present invention relates to sensor technical field, particularly relate to a kind of photoelectric sensor.
Background technology
Along with science and technology development, sensor is also used more and morely in each field.Wherein, photoelectric sensor plays an important role in each field as a member in the sensor.
Photoelectric sensor can use its light activated element to convert light signal to electric signal, is mainly used in radionetric survey and detection, industry automatic control, luminosity calculating, missile guidance, optical imagery, photoelectric communication and infrared remote sensing etc.Along with science and technology development, people are also increasingly high to the requirement of photoelectric sensor, as: require the power consumption of photoelectric sensor littler, sensitivity is higher, more adapt to external environment etc.Yet existing photoelectric sensor is difficult to satisfy simultaneously above condition.
Summary of the invention
For solving the problems of the technologies described above, the embodiment of the invention provides a kind of photoelectric sensor, so that the power consumption of photoelectric sensor is littler, sensitivity is higher, more adapt to external environment, technical scheme is following:
A kind of photoelectric sensor comprises light activated element, and said light activated element is made up of nano material three selenizings two indiums.
Preferably, said photoelectric sensor is the photoresistance type.
Preferably, said photoelectric sensor is the field effect transistor cast.
Preferably, said light activated element is the single nano-wire that three selenizings, two indiums constitute.
Preferably, said light activated element is made up of many three selenizings two indium nano wires.
Preferably, said many three selenizings two indium nano wires form the network membrane structure.
Through using above technical scheme, the present invention can use nano material three selenizings two indiums to constitute the light activated element of photoelectric sensor, because nano material three selenizings two indiums is small-sized, so power consumption is very low.Simultaneously, find that through overtesting the sensitivity of light activated element of the present invention is higher, the spectral response of the thermal adaptability and the broad of broad is arranged.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiment that put down in writing among the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
But the light activated element that single three selenizings, the two indium nano wires that Fig. 1 records for the present invention's experiment constitute is 50 seconds repeatedly repeat switch effect in the time interval;
The light activated element that single three selenizings, two indiums that Fig. 2 records for the present invention experiment constitute under different illumination intensity with the relation of photocurrent;
The light activated element that single three selenizings, two indiums that Fig. 3 records for the present invention experiment constitute is under the illumination of different wave length (254nm-800nm) and the relation of switch ratio;
Current-responsive when the light activated element that single three selenizings, two indiums that Fig. 4 records for the present invention's experiment constitute receives 550nm wavelength light photograph under different temperatures;
The structural representation of a kind of photoelectric sensor that Fig. 5 provides for the embodiment of the invention;
The structural representation of the another kind of photoelectric sensor that Fig. 6 provides for the embodiment of the invention.
Embodiment
In order to make those skilled in the art person understand the technical scheme among the present invention better; To combine the accompanying drawing in the embodiment of the invention below; Technical scheme in the embodiment of the invention is carried out clear, intactly description; Obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all should belong to the scope of the present invention's protection.
The disclosed a kind of photoelectric sensor of the embodiment of the invention comprises light activated element, and light activated element is by nano material three selenizings two indium (In
2Se
3) constitute.
Wherein, light activated element can certainly be made up of many three selenizings two indium nano wires or nanometer rods for the single nano-wire (also can be called single three selenizings, two indium nano wires) or the nanometer rods of three selenizings, two indiums formation.In practical application, light activated element can also be the single quantum dot of three selenizings, two indiums formation.Certainly, the light activated element that it will be appreciated by persons skilled in the art that the combination in any formation of above nano wire, nanometer rods and single quantum dot also can be accomplished the present invention.
Wherein, when the quantity of many three selenizing two indium nano wires more for a long time, many three selenizing two indium nano wires can form the network membrane structure.
In
2Se
3Be a kind of direct band gap sulphur based semiconductor material, excellent light sensitive characteristic is arranged under nanoscale.Than its block materials; Nano material is because a series of advantages such as quantum size effect, surface effect, macro quanta tunnel effects; Device with the nano material assembling can demonstrate better performance; For example: to the susceptibility that environment is more increased, quicker response and littler work energy consumption etc.In
2Se
3Low-dimensional nano structures such as the nano wire that constitutes, nanometer rods have sensitive induction to light.
But the light activated element that single three selenizings, the two indium nano wires that record for experiment shown in Figure 1 constitute is 50 seconds repeatedly repeat switch effect in the time interval.Employed irradiates light is a visible light in the experiment, and its intensity is 6mw/cm.Photocurrent intensity and dark current in the circuit are stabilized in respectively about 5.0pA and the 45fA, explain that this device has highly stable switching effect and bigger on-off ratio (＞100).
The light activated element that single three selenizings, two indiums that record for experiment shown in Figure 2 constitute is linear with photocurrent under different illumination intensity.Record through experiment: giving under the different visible light intensities of illumination, photocurrent is linear increasing along with the increase of intensity of illumination.Thus, realized, thereby also can pass through this In by the quantitative detection of photoelectric sensor to light intensity
2Se
3The nano wire photoelectric device is realized the regulation and control to electrical signal by intensity variations.
The light activated element that single three selenizings, two indiums that record for experiment shown in Figure 3 constitute is under the illumination of different wave length (254nm-800nm) and the relation of switch ratio.Record through experiment: under the illumination of broad wavelength coverage, light activated element all presents bigger switch ratio.Under same intensity of illumination, bigger for the photoswitch ratio of ultraviolet band, and reduce in a smaller scope at the photoswitch ratio of visible light wave range, when optical wavelength during less than 750nm, on-off ratio is all greater than 20.And after optical wavelength surpassed 750nm, on-off ratio sharply descended.Can get single In thus
2Se
3Nano wire assembling device has been realized the detection (from the ultraviolet light to the visible light) to wide wavelength coverage.
Current-responsive when the light activated element that single three selenizings, two indiums that record for the present invention's experiment shown in Figure 4 constitute receives 550nm wavelength light photograph under different temperatures.As can be seen from the figure: the switch ratio of device is violent increasing along with decrease of temperature, and the switch ratio under the 7K temperature is 2000 times, and switch ratio at room temperature is about 200 times, and nearly ten times increase is arranged between the two.Under the 300K temperature, still has on-off ratio greater than 80.Therefore, In
2Se
3The light-sensitive detector spare that nano wire constitutes can be implemented in ultralow temperature and low temperature, normal temperature and is higher than the photodetection function in the wide temperature range under the room temperature.
A kind of photoelectric sensor that the embodiment of the invention provides can use nano material three selenizings two indiums to constitute the light activated element of photoelectric sensor, because nano material three selenizings two indiums is small-sized, so power consumption is very low.Simultaneously, find that through above test the sensitivity of light activated element of the present invention is higher, the spectral response of the thermal adaptability and the broad of broad is arranged.
As shown in Figure 5, a kind of photoelectric sensor that the embodiment of the invention provides can or be claimed photoconductive tube for the photoresistance type.
Wherein, photoresistance can realize the detection to intensity of illumination through the size (or the photocurrent under the specific voltage) of following resistance value of producing of different illumination intensity.As shown in Figure 5, photoresistance is made up of element electrode pad 2 and three selenizings, two indium nanostructured photoresistance 1.
Photoresistance is modal optical sensor.Photo-resistor is the resistor that utilizes a kind of resistance value that semi-conductive photoelectric effect processes to change with the power of incident light; Incident intensity, resistance reduces, and a little less than the incident light, resistance increases.Photo-resistor generally is used for the measurement of light, the control and the opto-electronic conversion (variation of light being converted into the variation of electricity) of light.When illumination, the photochromics charge carrier is excited, and produces electronics-hole, is called photocurrent carrier.Under the effect of electric field, photocurrent carrier participates in conduction outside, forms the photocurrent more much bigger than dark current.The size of photocurrent and intensity of illumination proportion relation are so just can obtain the electric signal that changes with intensity of illumination on resistance.
A kind of photoelectric sensor that the embodiment of the invention provides can use nano material three selenizings two indiums to constitute the light activated element of photoelectric sensor, because nano material three selenizings two indiums is small-sized, so power consumption is very low.The sensitivity of finding light activated element of the present invention through overtesting is higher, and the spectral response of the thermal adaptability and the broad of broad is arranged.
As shown in Figure 6, a kind of photoelectric sensor that the embodiment of the invention provides can also be the field effect transistor cast.As shown in Figure 6, field effect transistor drains 6 by source electrode 8, and back grid 7 constitutes, and wherein three selenizings, two indium single nano-wires or many nanometer line network membrane structures constitute passages 5.Field effect transistor among the present invention can convert light signal the function of electric signal to except having photoresistance, can also be through regulating the function of grid voltage to electric signal control.
A kind of photoelectric sensor that the embodiment of the invention provides; Can use nano material three selenizings two indiums to constitute the light activated element of photoelectric sensor; Because nano material three selenizings two indiums is small-sized; And have specific nanometer size effect, so the photoelectric sensor power consumption very low, have very wide spectral response and a thermal adaptability.
Each embodiment in this instructions all adopts the mode of going forward one by one to describe, and identical similar part is mutually referring to getting final product between each embodiment, and each embodiment stresses all is the difference with other embodiment.
The above only is an embodiment of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; Can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.
Claims (6)
1. a photoelectric sensor comprises light activated element, it is characterized in that, said light activated element is made up of nano material three selenizings two indiums.
2. photoelectric sensor according to claim 1 is characterized in that, said photoelectric sensor is the photoresistance type.
3. photoelectric sensor according to claim 1 is characterized in that, said photoelectric sensor is the field effect transistor cast.
4. photoelectric sensor according to claim 1 is characterized in that, said light activated element is the single nano-wire that three selenizings, two indiums constitute.
5. photoelectric sensor according to claim 1 is characterized in that, said light activated element is made up of many three selenizings two indium nano wires.
6. photoelectric sensor according to claim 5 is characterized in that, said many three selenizings two indium nano wires form the network membrane structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102860583A CN102445223A (en) | 2011-09-23 | 2011-09-23 | Photoelectric sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102860583A CN102445223A (en) | 2011-09-23 | 2011-09-23 | Photoelectric sensor |
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| Publication Number | Publication Date |
|---|---|
| CN102445223A true CN102445223A (en) | 2012-05-09 |
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|---|---|---|---|
| CN2011102860583A Pending CN102445223A (en) | 2011-09-23 | 2011-09-23 | Photoelectric sensor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111504359A (en) * | 2020-05-14 | 2020-08-07 | 成都千嘉科技有限公司 | Method and device for improving reliability of photoelectric coding |
| CN112047308A (en) * | 2019-06-05 | 2020-12-08 | 南京理工大学 | In2Se3Quantum dot and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54140887A (en) * | 1978-04-24 | 1979-11-01 | Nippon Telegr & Teleph Corp <Ntt> | Photoelectric semiconductor converter element |
| CN101533867A (en) * | 2009-04-10 | 2009-09-16 | 武汉大学 | Zinc oxide nano-ultraviolet light sensor and preparation method thereof |
-
2011
- 2011-09-23 CN CN2011102860583A patent/CN102445223A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54140887A (en) * | 1978-04-24 | 1979-11-01 | Nippon Telegr & Teleph Corp <Ntt> | Photoelectric semiconductor converter element |
| CN101533867A (en) * | 2009-04-10 | 2009-09-16 | 武汉大学 | Zinc oxide nano-ultraviolet light sensor and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| TIANYOU ZHAI, XIAOSHENG FANG等: "Fabrication of High-Quality In2Se3 Nanowire Arrays toward High Performance Visible-Light Photodetectors", 《ACS NANO》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112047308A (en) * | 2019-06-05 | 2020-12-08 | 南京理工大学 | In2Se3Quantum dot and preparation method thereof |
| CN112047308B (en) * | 2019-06-05 | 2022-11-04 | 南京理工大学 | In 2 Se 3 Quantum dot and preparation method thereof |
| CN111504359A (en) * | 2020-05-14 | 2020-08-07 | 成都千嘉科技有限公司 | Method and device for improving reliability of photoelectric coding |
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Application publication date: 20120509 |