CN105352606B - A kind of reading circuit of non-refrigerate infrared focal plane array seeker - Google Patents
A kind of reading circuit of non-refrigerate infrared focal plane array seeker Download PDFInfo
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- CN105352606B CN105352606B CN201510513217.7A CN201510513217A CN105352606B CN 105352606 B CN105352606 B CN 105352606B CN 201510513217 A CN201510513217 A CN 201510513217A CN 105352606 B CN105352606 B CN 105352606B
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Abstract
The embodiment of the invention discloses a kind of reading circuits of non-refrigerate infrared focal plane array seeker, including：Offset thermal stabilizing circuit 10 comprising the reference micro-metering bolometer R of channel levelbAnd constant bias current is provided for it；Detection circuit 20 is connected to the detection micro-metering bolometer R of Pixel-levelsWith offset thermal stabilizing circuit 10, and according to refer to micro-metering bolometer RbWith detection micro-metering bolometer RsGenerate detection output signal；Integrating circuit 30 is connected to detection circuit 20 and is integrated to the detection output signal of detection circuit 20, obtains output signal.The reading circuit of the embodiment of the present invention is utilized as providing stable current path with reference to micro-metering bolometer, realize the stabilization of offset thermal, the uniformity and reliability of integrated circuit are greatly improved, while substantially increasing anti-voltage resistance and to environment the adaptability of circuit.
Description
Technical field
The present invention relates to infrared focal plane array seeker technical fields, more particularly, to a kind of non-refrigerating infrared focal plane
The reading circuit of detector array.
Background technology
Night vision technology is divided into both direction:Low-light level imaging technology and infrared thermal imaging technique.Night vision technology is in modern war
In have critical role, equip night vision apparatus weaponry spread aeroamphibious optimal in structure, be applied to large, medium and small weapon system
System, therefore advanced night vision technology is grasped for control battlefield situation with vital meaning.With low-light level imaging technology phase
Than, infrared thermal imaging technique complex manufacturing technology, production maintenance is of high cost, but operating distance, picture quality, round the clock share ask
Topic, can application field etc. there is significant advantage.
The core technology of infrared thermal imaging technique is detector technology.Classify according to operating temperature, infrared detector is divided into
Refrigeration mode and non-refrigeration type.Uncooled ir thermal imaging has low price, small, low in energy consumption, dependable performance, operation side
Just the advantages that, becomes inevitable mainstream technology.
Non-refrigerate infrared focal plane array seeker can work at normal temperatures, be not necessarily to refrigeration equipment, and with light weight, body
Product is small, long lifespan, at low cost, small power consumption, starts the advantages that fast and stability is good, meets civilian infrared system and part is military
Infrared system to Long Wave Infrared Probe there is an urgent need to, thus make this technology obtained it is quick development and widely answer
With.Reading circuit (ROIC) is uncooled infrared focal plane array（IRFPA）One of critical component, its major function is pair
The small-signal of infrared detector induction is pre-processed（Such as integral, amplification, filtering, sampling/holding）With array signal
Parallel/serial row conversion.Depending on the difference of detector material therefor and working method, reading circuit structure changes therewith, to meet frame
Maximum signal-to-noise ratio is obtained under the requirement of frequency（SNR）.
Microbolometer FPA array (FPA) has higher sensitivity, is a kind of most widely used non-brake method
Infrared focal plane array seeker.Its operation principle is that temperature changes after thermo-sensitive material absorbs incident infra-red radiation, to draw
The variation for playing self-resistance value detects the size of infrared radiation signal by measuring the variation of its resistance value.Microbolometer heat
Meter generally uses the cantilever beam micro-bridge structure that micromachining technology makes, bridge floor deposition to have one layer to have high temperature coefficient of resistance
(TCR) thermo-sensitive material, bridge floor have excellent mechanical performances by two and are coated with the bridge leg support of conductive material, bridge leg and substrate
Contact point be bridge pier, bridge pier is electrically connected on the silicon reading circuit (ROIC) under micro-metering bolometer FPA.Pass through bridge leg
And bridge pier, thermo-sensitive material are connected in the electricity channel of reading circuit, formation one is temperature sensitive and is connected to reading circuit
On pixel unit.The heat that thermo-sensitive material absorbs is mainly by three sources：Thermo-sensitive material temperature caused by underlayer temperature variation
Variation, the offset thermal for absorbing thermo-sensitive material temperature change caused by amount of infrared radiation and the generation of micro-metering bolometer biasing circuit
Caused thermo-sensitive material temperature change.
By the progress of development and technology for many years, non-refrigerate infrared focal plane array seeker meets on noise and makes
With needs, however people have in non-refrigerated infrared detector performance, picture quality, stability, power consumption, volume and cost
Higher requirement.
Invention content
It is more stable that an object of the present invention is to provide a kind of offset thermal that can make the biasing circuit of micro-metering bolometer
The reading of the non-refrigerate infrared focal plane array seeker for the adverse effect that variation to eliminate or reduce offset thermal is brought
Circuit.
Technical solution disclosed by the invention includes：
Provide a kind of reading circuit of non-refrigerate infrared focal plane array seeker, which is characterized in that including：Offset thermal
Stabilizing circuit 10, the offset thermal stabilizing circuit 10 include the reference micro-metering bolometer R of channel levelbAnd refer to micrometering to be described
Bolometer RbConstant bias current is provided；Detection circuit 20, the detection circuit 20 are connected to the detection micrometering of Pixel-level
Bolometer RsWith the offset thermal stabilizing circuit 10, and according to described with reference to micro-metering bolometer RbWith the detection micrometering spoke
Penetrate heat meter RsGenerate detection output signal；Integrating circuit 30, the integrating circuit 30 are connected to the detection circuit 20 and to institutes
The detection output signal for stating detection circuit 20 is integrated, and output signal is obtained.
In one embodiment of the present of invention, the offset thermal stabilizing circuit 10 further include chip-scale the first transistor MP1,
The 4th transistor MP4 of the second transistor MP2 of chip-scale, the third transistor MP3 of channel level and channel level, wherein：It is described
The source electrode of the first transistor MP1 is connected to system power supply VDD, the drain electrode of the first transistor MP1 passes through the first constant-current source 101
Ground connection, the grid of the first transistor MP1 are connected to the drain electrode of the first transistor MP1；The second transistor MP2's
Source electrode is connected to system power supply VDD, the drain electrode of the second transistor MP2 is grounded by the second constant-current source 102, and described second is brilliant
The grid of body pipe MP2 is connected to the drain electrode of the second transistor MP2 and is connected to described with reference to micro-metering bolometer Rb's
One end；The reference micro-metering bolometer RbThe other end be connected to the source electrode of the third transistor MP3；The third crystal
The drain electrode of pipe MP3 is connected to the source electrode of the 4th transistor MP4 and is connected to the detection circuit 20, the third crystal
The grid of pipe MP3 is connected to the grid of the 4th transistor MP4；The grounded drain of the 4th transistor MP4.
In one embodiment of the present of invention, the detection circuit 20 includes the 5th transistor MP5, wherein：Described 5th is brilliant
The source electrode of body pipe MP5 is connected to the drain electrode of the third transistor MP3 and is connected to the integrating circuit 30, and the described 5th is brilliant
The drain electrode of body pipe MP5 is connected to the detection micro-metering bolometer RsOne end, the grid of the 5th transistor MP5 is connected to
Bias voltage Vfid；The detection micro-metering bolometer RsThe other end ground connection.
In one embodiment of the present of invention, the source electrode of the 5th transistor MP5 is connected to the third by switch S1
The drain electrode of transistor MP3 and the integrating circuit 30.
The reading circuit of the embodiment of the present invention is utilized as providing stable current path with reference to micro-metering bolometer, realizes
The stabilization of offset thermal, greatly improves the uniformity and reliability of integrated circuit, while substantially increasing the anti-voltage resistance of circuit
And the adaptability to environment.
Description of the drawings
Fig. 1 is the structural representation of the reading circuit of the non-refrigerate infrared focal plane array seeker of one embodiment of the invention
Figure.
Fig. 2 is the analogous diagram of traditional reading circuit output voltage with target temperature under various substrate.
Fig. 3 is emulation of the reading circuit output voltage of the embodiment of the present invention with target temperature under various substrate
Figure.
Specific implementation mode
Below in conjunction with the reading of the non-refrigerate infrared focal plane array seeker of the attached drawing embodiment that the present invention will be described in detail
Go out the concrete structure of circuit.
Fig. 1 is the structural representation of the reading circuit of the non-refrigerate infrared focal plane array seeker of one embodiment of the invention
Figure.
As shown in Figure 1, in some embodiments of the invention, a kind of reading circuit of non-refrigerate infrared focal plane array seeker
Including offset thermal stabilizing circuit 10, detection circuit 20 and integrating circuit 30.
Offset thermal stabilizing circuit 10 includes the reference micro-metering bolometer R of channel levelbAnd to be described with reference to microbolometer heat
Count RbConstant bias current is provided.Detection circuit 20 is connected to the detection micro-metering bolometer R of Pixel-levelsIt is steady with the offset thermal
Determine circuit 10, and micro-metering bolometer R is referred to according to thisbWith detection micro-metering bolometer RsGenerate detection output signal.Integral
Circuit 30 is connected to detection circuit 20 and the detection output signal of receiving test circuit 20, and is exported to the detection of detection circuit 20
Signal is integrated, to obtain output signal.
In the embodiment of the present invention, offset thermal stabilizing circuit 10 is with reference to micro-metering bolometer RbConstant biased electrical is provided
Stream, the offset thermal to ensure that blind picture dot in biasing circuit is constant, substantially increases the uniformity and reliability of integrated circuit,
Also substantially increase circuit simultaneously resists voltage resistance and to environment adaptability.
As shown in Figure 1, in some embodiments of the present invention, offset thermal stabilizing circuit 10 further includes the first crystal of chip-scale
The 4th transistor MP4 of pipe MP1, the second transistor MP2 of chip-scale, the third transistor MP3 of channel level and channel level.
The source electrode of the first transistor MP1 is connected to system power supply VDD；The drain electrode of the first transistor MP1 passes through the first constant-current source
101 ground connection；The grid of the first transistor MP1 is connected to the drain electrode of the first transistor MP1.
The source electrode of second transistor MP2 is connected to system power supply VDD；The drain electrode of second transistor MP2 passes through the second constant-current source
102 ground connection；The grid of second transistor MP2 is connected to the drain electrode of second transistor MP2 and is connected to reference to microbolometer heat
Count RbOne end；With reference to micro-metering bolometer RbThe other end be connected to the source electrode of third transistor MP3.
The drain electrode of third transistor MP3 is connected to the source electrode of the 4th transistor MP4 and is connected to detection circuit 20（Example
Such as, it is connected to the source electrode of the 5th transistor MP5, as shown in Figure 1）；The grid of third transistor MP3 is connected to the 4th transistor
The grid of MP4；The grounded drain of 4th transistor MP4.
As shown in Figure 1, in some embodiments of the present invention, detection circuit 20 includes the 5th transistor MP5, wherein the 5th is brilliant
The source electrode of body pipe MP5 is connected to the drain electrode of third transistor MP3 and is connected to integrating circuit 30（For example, being connected to integral electricity
The negative input of the operational amplifier on road 30, as shown in Figure 1）；The drain electrode of 5th transistor MP5 is connected to detection microbolometer
Heat meter RsOne end, the grid of the 5th transistor MP5 is connected to bias voltage Vfid；Detect micro-metering bolometer RsAnother termination
Ground.
In some embodiments of the present invention, detection circuit 20 can also include that the source electrode of switch S1, the 5th transistor MP5 are logical
Cross drain electrode and integrating circuit 30 that switch S1 is connected to third transistor MP3.
In the embodiment of the present invention, integrating circuit 30 can be common integrating circuit in the art, such as such as Fig. 1 institutes
Show, details are not described herein.
It is briefly described as follows the operation principle of the circuit of the embodiment of the present invention.
For example, in embodiment shown in FIG. 1, by the bias voltage V of chip-scale PMOS tube MP1 current-mirror structures generationebIt gives
The grid of the PMOS tube MP3 and MP4 of offset thermal stabilizing circuit 10 provide input.The source level interface channel grade of MP3 refers to micrometering spoke
Penetrate heat meter Rb, with reference to micro-metering bolometer Rb the other end be connected to generated by chip-scale PMOS tube PM2 current-mirror structures it is inclined
Set voltage VSK.The drain of MP4 is connected to ground.In scanning neutral gear, when detection circuit 20 is not switched on, channel level refers to microbolometer
Heat meter Rb, MP3 and MP4 constitute a complete circuit, the electric current for flowing through MP3 drain electrodes is IBIAS.During scanning, detection electricity
Offset thermal stabilizing circuit 10 is accessed on road 20, due to the operational amplifier negative-feedback enlarged structure in integrating circuit 30, meets empty short
The positive-negative input end voltage of condition, operational amplifier is equal.Therefore when in the access offset thermal of detection circuit 20 stabilizing circuit 10, MP3
Drain terminal voltage be equal to integrator positive input voltage Vref.Since MP4 is PMOS tube, as PMOS tube gate source voltage VGSIt is less than
Equal to threshold voltage VthWhen, PMOS tube conducting generates drain-source current ID.Take integrator positive input voltage V appropriaterefWith
Chip-scale bias voltage Veb, gate source voltage VGS=VG−VS=Veb−VrefMeet Veb−Vref>Vth, that is, the access biasing of detection circuit 20
When thermostabilization circuit 10, MP4 is due to Veb−Vref>VthShutdown.MP2 breadth length ratios appropriate are taken, can to then flow through MP3 leakages
It is I to hold electric current stillbiasIt is constant.
In the circuit of the embodiment of the present invention, pass through the reference micro-metering bolometer R for making to flow through channel levelbWith PMOS tube
The electric current I of MP3biasIt remains unchanged, so that obtained integration currentI int Only with pixel class survey micro-metering bolometer RsPhase
It closes, i.e.,：
Iint = IBIAS – Is = b – alpha×ΔTscene（1）
Formula（1）InbFor constant, IsTo flow through detection micro-metering bolometer RsElectric current,alphaIndicate micro-metering bolometer
Temperature coefficient, Δ TsceneIndicate detection micro-metering bolometer R caused by infra-red radiationsTemperature change..
From formula（1）In as can be seen that due to integration currentI int With the reference micro-metering bolometer R of channel levelbOffset thermal
It is not related, obtain integral output voltage to the endV out For：
Formula（2）In,V ref For reference voltage,t int For the time of integration, CintFor the capacitance of the integrating capacitor in integrating circuit 30
Value.As it can be seen that obtained integral output voltageV out It is only related to radiation temperature, micro-metering bolometer and circuit parameter characteristic, and it is inclined
It is not related to set heat.
As it can be seen that the present invention, which utilizes, gives channel level micro-metering bolometer RbA stable current branch is provided to obtain stablizing partially
The method for setting heat, makes the offset thermal of micro-metering bolometer not change over time, to make the resistance variations of micro-metering bolometer only
It is related that incident infrared intensity is absorbed with it, improves the output accuracy of non-refrigerating infrared focal plane reading circuit.
For example, Fig. 2 and Fig. 3 respectively illustrate traditional reading circuit and the reading circuit output voltage of the embodiment of the present invention
With analogous diagram of the target temperature under various substrate.As it can be seen that the offset thermal of the reading circuit of the embodiment of the present invention is than tradition
Reading circuit it is more stable.
As it can be seen that the electric current that the reading circuit of the embodiment of the present invention is utilized as providing stabilization with reference to micro-metering bolometer is logical
Road realizes the stabilization of offset thermal, greatly improves the uniformity and reliability of integrated circuit, while substantially increasing the anti-of circuit
Adaptability voltage resistance and to environment.
Above by specific embodiment, the present invention is described, but the present invention is not limited to these specific implementations
Example.It will be understood by those skilled in the art that various modifications, equivalent replacement, variation etc. can also be done to the present invention, these transformation
It, all should be within protection scope of the present invention without departing from the spirit of the present invention.In addition, " the reality described in the above many places
Apply example " indicate different embodiments, naturally it is also possible to it is completely or partially combined in one embodiment.
Claims (2)
1. a kind of reading circuit of non-refrigerate infrared focal plane array seeker, which is characterized in that including：
Offset thermal stabilizing circuit（10）, the offset thermal stabilizing circuit（10）Reference micro-metering bolometer including channel level（Rb）
And refer to micro-metering bolometer to be described（Rb）Constant bias current, the offset thermal stabilizing circuit are provided（10）It further include core
The first transistor of chip level（MP1）, chip-scale second transistor（MP2）, channel level third transistor（MP3）And channel level
The 4th transistor（MP4）；
Detection circuit（20）, the detection circuit（20）It is connected to the detection micro-metering bolometer of Pixel-level（Rs）With the biasing
Thermostabilization circuit（10）, and refer to micro-metering bolometer according to described（Rb）With the detection micro-metering bolometer（Rs）Generate spy
Survey output signal；
Integrating circuit（30）, the integrating circuit（30）It is connected to the detection circuit（20）And to the detection circuit（20）'s
Detection output signal is integrated, and output signal is obtained；
The detection circuit（20）Including the 5th transistor（MP5）, wherein：5th transistor（MP5）Source electrode be connected to
The third transistor（MP3）Drain electrode and be connected to the integrating circuit（30）, the 5th transistor（MP5）Drain electrode
It is connected to the detection micro-metering bolometer（Rs）One end, the 5th transistor（MP5）Grid be connected to bias voltage
（Vfid）；The detection micro-metering bolometer（Rs）The other end ground connection；5th transistor（MP5）Source electrode pass through switch
（S1）It is connected to the third transistor（MP3）Drain electrode and the integrating circuit（30）.
2. reading circuit as described in claim 1, it is characterised in that：
The first transistor（MP1）Source electrode be connected to system power supply（VDD）, the first transistor（MP1）Drain electrode pass through
First constant-current source（101）Ground connection, the first transistor（MP1）Grid be connected to the first transistor（MP1）Drain electrode；
The second transistor（MP2）Source electrode be connected to system power supply（VDD）, the second transistor（MP2）Drain electrode pass through
Second constant-current source（102）Ground connection, the second transistor（MP2）Grid be connected to the second transistor（MP2）Drain electrode
And it is connected to described with reference to micro-metering bolometer（Rb）One end；
It is described to refer to micro-metering bolometer（Rb）The other end be connected to the third transistor（MP3）Source electrode；
The third transistor（MP3）Drain electrode be connected to the 4th transistor（MP4）Source electrode and be connected to the inspection
Slowdown monitoring circuit（20）, the third transistor（MP3）Grid be connected to the 4th transistor（MP4）Grid；
4th transistor（MP4）Grounded drain.
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| CN106768377A (en) * | 2017-03-31 | 2017-05-31 | 苏州芯通微电子有限公司 | It is multiplexed the un-cooled infrared focal plane array gating circuit of contact hole |
| CN107727243B (en) * | 2017-11-22 | 2019-12-10 | 北方广微科技有限公司 | Uncooled infrared focal plane array readout circuit |
| CN111829670B (en) * | 2019-04-16 | 2021-09-21 | 杭州海康微影传感科技有限公司 | Uncooled infrared focal plane array reading circuit |
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| CN201464051U (en) * | 2009-06-17 | 2010-05-12 | 北京空间机电研究所 | Low-temperature working-type infrared detector focal plane temperature monitoring circuit |
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| US6953932B2 (en) * | 1999-10-07 | 2005-10-11 | Infrared Solutions, Inc. | Microbolometer focal plane array with temperature compensated bias |
| US7709793B2 (en) * | 2007-07-12 | 2010-05-04 | Parrish William J | Bolometer array compensation |
| CN103234642B (en) * | 2013-04-15 | 2015-07-22 | 电子科技大学 | Integrating pre-circuit of reading circuit in infrared focal plane array detector |
| CN103913700B (en) * | 2014-04-18 | 2017-04-05 | 电子科技大学 | A kind of detection circuit of infrared focal plane read-out circuit |
| CN104251741B (en) * | 2014-09-18 | 2017-07-18 | 电子科技大学 | A kind of self adaptation infrared focal plane array reading circuit |
| CN104819779B (en) * | 2015-04-03 | 2018-05-22 | 无锡艾立德智能科技有限公司 | A kind of micro-metering bolometer type infrared reading circuit with biasing thermal compensation function |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201464051U (en) * | 2009-06-17 | 2010-05-12 | 北京空间机电研究所 | Low-temperature working-type infrared detector focal plane temperature monitoring circuit |
| CN202885976U (en) * | 2012-08-15 | 2013-04-17 | 无锡萌涉传感技术有限公司 | Infrared focal-plane array read-out circuit |
| CN103776544A (en) * | 2014-01-09 | 2014-05-07 | 电子科技大学 | Readout circuit of uncooled infrared focal plane array |
| CN104251740A (en) * | 2014-09-18 | 2014-12-31 | 电子科技大学 | Reading circuit of uncooled infrared focal plane array |
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