CN104180790B - Si-APD (Silicon-Avalanche Photo Diode) device - Google Patents
Si-APD (Silicon-Avalanche Photo Diode) device Download PDFInfo
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- CN104180790B CN104180790B CN201410446822.2A CN201410446822A CN104180790B CN 104180790 B CN104180790 B CN 104180790B CN 201410446822 A CN201410446822 A CN 201410446822A CN 104180790 B CN104180790 B CN 104180790B
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- apd
- single tube
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- voltage
- dark current
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- 230000015556 catabolic process Effects 0.000 claims abstract description 16
- 238000001514 detection method Methods 0.000 claims abstract description 9
- 239000000523 sample Substances 0.000 claims description 5
- 230000005622 photoelectricity Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 4
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 abstract 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C3/00—Measuring distances in line of sight; Optical rangefinders
- G01C3/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a Si-APD (Silicon-Avalanche Photo Diode) device. The novel Si-APD device comprises a first single Si-APD and a second single Si-APD which are arranged adjacently in parallel, wherein the first single Si-APD corresponds to a light window and serves as a light detection unit; the second single Si-APD is set in backlight and serves as a breakdown voltage detection unit; the first single Si-APD and the second single Si-APD share the same negative pole. Based on the principle that the properties of adjacent devices in the integrated circuit technology are consistent with each other, and paired Si-APDs are adopted; the first single Si-APD is used for detecting light and the second single Si-APD serves as the breakdown voltage detection unit; an optimal bias effect can be achieved, just by means of detecting the dark current of the second single Si-APD, stabilizing the value of the dark current via a negative feedback control loop, and utilizing the voltage when the value of the dark current is maintained at a set value to serve as the work bias voltage of the first single Si-APD, so that the complicacy problem of the traditional dynamic bias is solved, the complicacy degree and cost of a distance measuring system are lowered, and the novel Si-APD device is simple and practical.
Description
Technical field
The invention belongs to laser ranging field is and in particular to a kind of Si-APD device.
Background technology
Si-APD, Chinese is silicon avalanche photodiode, is mainly used in laser ranging field, this opto-electronic conversion
Device has high sensitivity, and its gain (M) is generally relevant with bias voltage, and optimal bias voltage is to increase near breakdown voltage
Beneficial highest, so the good design of bias voltage circuit will bring high-gain.But the breakdown voltage of Si-APD and temperature phase
Close, its temperature coefficient is big, by 125 DEG C of variation of ambient temperature (- 45 DEG C～+85 DEG C) when usually using, bias voltage can follow temperature
Degree change and change, substantially have tens volts to keep stablizing of high-gain.
Current bias mode has：1), fixed bias, bias voltage is more much lower than breakdown voltage, even if temperature change
Its bias voltage is not more than breakdown voltage, (can bring very big noise after exceeding breakdown voltage or directly damage device
Ruin), but its gain also can much lower without optimal use effect；2), dynamic bias, using device bias close to breakdown potential
The principle that during pressure, noise can increase, makes a noise measuring feedback control loop and carrys out dynamic control bias voltage, when temperature subtracts
When few, breakdown voltage diminishes, and noise increases, and circuit turns bias down makes noise diminish；Vice versa.Make the use condition of device
Most preferably reach the purpose of high-gain, though the method makes the limiting performance of device be played, circuit is extremely complex, algorithm
Also very complicated, relatively costly.
Content of the invention
For above-mentioned weak point of the prior art, the present invention is intended to provide a kind of simple and effective Si-APD device,
Solve the complexity problem of dynamic bias, reduce complexity and the cost of range-measurement system, simple and practical.
To achieve these goals, technical scheme：A kind of Si-APD device, it includes adjacent, parallel setting
First Si-APD single tube and the 2nd Si-APD single tube, a Si-APD single tube is corresponding with light window to make photo detecting unit, institute
State the 2nd Si-APD single tube backlight setting and make breakdown voltage probe unit, a Si-APD single tube and the 2nd Si-APD single tube are altogether
Use negative pole.
Further, the positive pole of a described Si-APD single tube connects photoelectricity current detection circuit；Described 2nd Si-APD is mono-
It is mutually electric with the common negative pole of a described Si-APD single tube and the 2nd Si-APD single tube that the positive pole of pipe passes through negative feedback control loop
Even.
Further, described negative feedback control loop is the dark current detecting in described 2nd Si-APD single tube, and passes through
Linear change controls corresponding bias voltage, and dark current is maintained the then work for described Si-APD single tube during setting value
Bias voltage.
Further, described negative feedback control loop includes dark current testing circuit, the control voltage being electrically connected with successively
Produce circuit and HVB high voltage bias circuit, wherein, described control voltage produces circuit and a bias voltage initialization circuit is electrically connected with.
Beneficial effects of the present invention：According to the principle that adjacent devices performance in integrated circuit technology is consistent, using to tubular type
Si-APD, optical detection is carried out by a Si-APD single tube, by the 2nd Si-APD single tube as breakdown voltage probe unit, passes through
Detect the dark current of the 2nd Si-APD single tube, and stablized the value of this dark current by negative feedback control loop, when dark current maintains
In setting value magnitude of voltage when such as 10 microamperes as the operating bias voltage of a Si-APD single tube it is possible to obtain optimal
The effect of biasing, and then solve the complexity problem of conventional dynamic biasing, also reduce the complexity of range-measurement system and become
This, simple and practical.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Have technology description in required use accompanying drawing be briefly described it should be apparent that, drawings in the following description be only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, acceptable
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the structured flowchart of the present invention.
Specific embodiment
To further describe the present invention with reference to specific embodiment and accompanying drawing.
A kind of Si-APD device as shown in Figure 1, it includes a Si-APD single tube 11 and second of adjacent, parallel setting
Si-APD single tube 12, a Si-APD single tube 11 is corresponding with light window to make photo detecting unit, described 2nd Si-APD single tube
Breakdown voltage probe unit is made in 12 backlight settings, and a Si-APD single tube 11 and the 2nd Si-APD single tube 12 share negative pole.
This invention is by tubular type Si-APD structure, one detects single as photo detecting unit, one as breakdown voltage
Unit, by carrying out dark current detection to this breakdown voltage probe unit, and to stablize this dark current using negative feedback control loop
Value, when dark current maintain such as 10 microamperes of setting value, 5 microamperes etc. when breakdown voltage be then a Si-APD single tube work
Make bias voltage, finally achieve the effect of just bias, be also achieved that the high sensitivity of laser ranging.
Specifically, the positive pole of a described Si-APD single tube 11 connects photoelectricity current detection circuit 20；Described 2nd Si-APD
The positive pole of single tube 12 passes through the common of negative feedback control loop and a described Si-APD single tube 11 and the 2nd Si-APD single tube 12
Negative pole phase is electrically connected.This negative feedback control loop is common negative feedback control loop, its object is to detect described 2nd Si-
Dark current in APD single tube 12, and corresponding bias voltage is controlled by linear change, dark current is maintained during setting value then
For the operating bias voltage of a described Si-APD single tube 11, stablize the value of dark current by this negative feedback control loop.
And as common negative feedback control loop, it includes dark current testing circuit 21, the control being electrically connected with successively
Voltage generation circuit 22 and HVB high voltage bias circuit 23, wherein, described control voltage produces circuit 22 and a bias voltage sets electricity
Road 24 is electrically connected with.First pass through dark current testing circuit 21 dark current in the 2nd Si-APD single tube 12 to be detected, so
Afterwards circuit 22 is produced by control voltage and bias voltage initialization circuit 24 stablizes this dark current for such as 10 microamperes of setting value, this
When, formed the best effort bias voltage of a described Si-APD single tube 11 by HVB high voltage bias circuit 23.
The technical scheme above embodiment of the present invention being provided is described in detail, specific case used herein
The principle and embodiment of the embodiment of the present invention is set forth, the explanation of above example is only applicable to help understand this
The principle of inventive embodiments；Simultaneously for one of ordinary skill in the art, according to the embodiment of the present invention, in specific embodiment party
All will change in formula and range of application, in sum, this specification content should not be construed as limitation of the present invention.
Claims (2)
1. a kind of Si-APD device it is characterised in that：The Si-APD that described Si-APD device includes adjacent, parallel setting is mono-
Pipe (11) and the 2nd Si-APD single tube (12), a Si-APD single tube (11) is corresponding with light window to make photo detecting unit, institute
State the 2nd Si-APD single tube (12) backlight setting and make breakdown voltage probe unit, a Si-APD single tube (11) and the 2nd Si-
APD single tube (12) shares negative pole；The positive pole of a described Si-APD single tube (11) connects photoelectricity current detection circuit (20)；Described
The positive pole of two Si-APD single tubes (12) passes through negative feedback control loop and a described Si-APD single tube (11) and the 2nd Si-APD
The common negative pole phase of single tube (12) is electrically connected；Described negative feedback control loop is dark in the described 2nd Si-APD single tube (12) of detection
Electric current, and corresponding bias voltage is controlled by linear change, it is then a described Si- that dark current is maintained during setting value
The operating bias voltage of APD single tube (11).
2. a kind of Si-APD device according to claim 1 it is characterised in that：Described negative feedback control loop is included successively
The dark current testing circuit (21) being electrically connected with, control voltage produce circuit (22) and HVB high voltage bias circuit (23), wherein, described
Control voltage is produced circuit (22) and is electrically connected with a bias voltage initialization circuit (24).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410446822.2A CN104180790B (en) | 2014-09-03 | 2014-09-03 | Si-APD (Silicon-Avalanche Photo Diode) device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410446822.2A CN104180790B (en) | 2014-09-03 | 2014-09-03 | Si-APD (Silicon-Avalanche Photo Diode) device |
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| Publication Number | Publication Date |
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| CN104180790A CN104180790A (en) | 2014-12-03 |
| CN104180790B true CN104180790B (en) | 2017-02-15 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105548848B (en) * | 2015-12-11 | 2018-09-21 | 中派科技（深圳）有限责任公司 | Device, device and method for measuring breakdown voltage |
| CN105827236A (en) * | 2016-03-09 | 2016-08-03 | 合肥汇芯半导体科技有限公司 | Circuit structure used for driving silicon-based avalanche photodiode |
| CN115039052B (en) * | 2020-03-13 | 2024-04-12 | 华为技术有限公司 | Bias voltage adjusting method and device and optical module |
| CN114966360B (en) * | 2022-07-27 | 2022-10-25 | 成都光创联科技有限公司 | System and method for testing avalanche voltage of optical device |
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| DE3068041D1 (en) * | 1979-09-19 | 1984-07-05 | Amiens Const Elect Mec | Washing and spin drying machine, the drum being driven by an immersed belt |
| US7297922B2 (en) * | 2005-09-28 | 2007-11-20 | Intel Corporation | Optical receiver protection circuit |
| US8476594B2 (en) * | 2008-12-15 | 2013-07-02 | Koninklijke Philips Electronics N.V. | Temperature compensation circuit for silicon photomultipliers and other single photon counters |
| US8519340B2 (en) * | 2008-12-22 | 2013-08-27 | Koninklijke Philips N.V. | High dynamic range light sensor |
| JP5616368B2 (en) * | 2009-03-06 | 2014-10-29 | コーニンクレッカ フィリップス エヌ ヴェ | Radiation detector module, imaging device having the module, radiation detector array drift compensation method, and computer-readable medium for performing the method |
| CN103017729A (en) * | 2012-11-20 | 2013-04-03 | 王振兴 | Method for improving precision of laser range finder |
| CN103457673B (en) * | 2013-07-26 | 2016-03-09 | 厦门优迅高速芯片有限公司 | Improve the method and apparatus of APD optical receiver saturated light power |
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