CN108063144B - Thermal modulation silicon germanium photoelectric detection structure - Google Patents
Thermal modulation silicon germanium photoelectric detection structure Download PDFInfo
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- CN108063144B CN108063144B CN201711437302.5A CN201711437302A CN108063144B CN 108063144 B CN108063144 B CN 108063144B CN 201711437302 A CN201711437302 A CN 201711437302A CN 108063144 B CN108063144 B CN 108063144B
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- silicon germanium
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- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims abstract description 47
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 238000001514 detection method Methods 0.000 title claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The utility model provides a thermal modulation silicon germanium photoelectric detection structure, relates to optical communication integrated device field, sets up in silicon-based photonic integrated chip, silicon-based photonic integrated chip includes substrate silicon, covers at the buried oxide layer of substrate silicon top surface and covers the overburden at buried oxide layer top surface, thermal modulation silicon germanium photoelectric detection structure includes: the silicon germanium detector is arranged on the top surface of the buried oxide layer and is positioned in the covering layer; and the heating device comprises a heater arranged in the covering layer, and the temperature of the silicon germanium detector can be changed when the heater is heated. The invention changes the temperature of the silicon germanium detector through the heating device, avoids the responsivity of the silicon germanium detector in longer wavelength from being degraded, and realizes the responsivity with flat wavelength.
Description
Technical Field
The invention relates to the field of optical communication integrated devices, in particular to a thermal modulation silicon germanium photoelectric detection structure.
Background
The silicon germanium detector is a device for converting a high-speed optical signal into a current signal, and is a key device of a silicon-based photonic integrated chip. Silicon germanium detectors rely primarily on the absorption of light by germanium materials to produce photocurrent. However, the germanium material has an absorption boundary at longer wavelengths, and therefore, the silicon germanium detector can only ensure high responsivity at shorter wavelengths, while at longer wavelengths, the responsivity may be degraded, thereby affecting the sensitivity of the receiver.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a thermal modulation silicon germanium photoelectric detection structure, wherein the temperature of a silicon germanium detector is changed through a heating device, the responsivity of the silicon germanium detector at longer wavelength is prevented from being degraded, and the wavelength flatness responsivity is realized.
In order to achieve the above object, the present invention provides a thermal modulation sige photodetection structure, which is disposed in a silicon-based photonic integrated chip, wherein the silicon-based photonic integrated chip includes a substrate silicon, a buried oxide layer covering a top surface of the substrate silicon, and a cover layer covering a top surface of the buried oxide layer, and the thermal modulation sige photodetection structure includes:
the silicon germanium detector is arranged on the top surface of the buried oxide layer and is positioned in the covering layer;
and the heating device comprises a heater arranged in the covering layer, and the temperature of the silicon germanium detector can be changed when the heater is heated.
On the basis of the technical scheme, the two ends of the heater are communicated with the top surface of the covering layer through the cathode through hole and the anode through hole respectively, the heating device further comprises a cathode arranged at the top end of the cathode through hole and an anode arranged at the top end of the anode through hole, and the heater is heated when voltage is applied to the cathode and the anode.
On the basis of the technical scheme, the space distance between the heater and the silicon germanium detector is less than or equal to 10 microns.
On the basis of the technical scheme, the heater is a resistance heater, and the bottom surface of the heater is higher than the top surface of the silicon germanium detector.
On the basis of the technical scheme, the distance between the bottom surface of the heater and the top surface of the silicon germanium detector is less than or equal to 3 microns.
On the basis of the technical scheme, the heater is a doped silicon heater and is manufactured on the top surface of the oxygen burying layer.
On the basis of the technical scheme, a layer of silicon is arranged between the oxygen burying layer and the covering layer, and the doped silicon of the doped silicon heater is realized by doping the layer of silicon.
On the basis of the technical scheme, the silicon germanium detector is a surface incidence type detector or a waveguide type detector.
On the basis of the technical scheme, the cathode and the anode are both made of conductive metal materials, and the conductive metal materials are filled in the cathode through hole and the anode through hole.
On the basis of the technical scheme, the oxygen burying layer and the covering layer are both made of silicon dioxide materials, and the substrate silicon is made of silicon materials.
The invention has the beneficial effects that: by adding the heating device near the silicon germanium detector, when voltage is applied to two ends of the heater, the temperature of the silicon germanium detector can be changed, so that the absorption boundary of the silicon germanium detector moves, the degradation of the responsivity of longer wavelength is avoided, the wavelength flatness responsivity of the silicon germanium detector is realized, and the sensitivity of a receiver is ensured.
Drawings
FIG. 1 is a schematic diagram of a first embodiment of a thermally tuned SiGe photodetector configuration in accordance with the present invention;
fig. 2 is a schematic diagram of a second embodiment of a thermally tuned sige photodetection structure according to the present invention.
Reference numerals:
1-silicon germanium detector, 2-heating device, 3-resistance heater, 4-doped silicon heater, 5-anode through hole, 6-cathode through hole, 7-anode, 8-cathode, 9-covering layer, 10-buried oxide layer and 11-substrate silicon.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
The invention relates to a thermal modulation silicon germanium photoelectric detection structure which is arranged in a silicon-based photonic integrated chip, wherein the silicon-based photonic integrated chip comprises substrate silicon 11, an oxygen burying layer 10 and a covering layer 9, the oxygen burying layer 10 covers the top surface of the substrate silicon 11, the covering layer 9 covers the top surface of the oxygen burying layer 10, and a layer of silicon is arranged between the oxygen burying layer 10 and the covering layer 9.
The first embodiment:
as shown in fig. 1, the thermally tuned sige photodetection structure of the present invention comprises a sige detector 1 and a heating device 2, and the sige detector 1 is disposed on the top surface of a buried oxide layer 11 and within a capping layer 9. The heating device 2 comprises a resistive heater 3, an anode 7 and a cathode 8, the resistive heater 3 being arranged in a cover layer 9. The two ends of the resistance heater 3 are communicated with the top surface of the covering layer 9 through the anode through hole 5 and the cathode through hole 6 respectively, the anode 7 is arranged at the top end of the anode through hole 5, the cathode 8 is arranged at the top end of the cathode through hole 6, and the anode 7 and the cathode 8 are arranged on the top surface of the covering layer 9 respectively. When a voltage is applied to the cathode 8 and the anode 7, the resistive heater 3 heats up, thereby changing the temperature of the sige detector 1. Preferably, the spatial distance between the resistive heater 3 and the silicon germanium detector 1 is less than or equal to 10 μm.
In this embodiment, the position of the resistance heater 3 is higher than that of the silicon germanium detector 1, that is, the bottom surface of the resistance heater 3 is higher than the top surface of the silicon germanium detector 1, and the distance between the bottom surface of the resistance heater 3 and the top surface of the silicon germanium detector 1 is less than or equal to 3 μm.
Preferably, the sige detector 1 is a device that generates photocurrent by light absorption through a ge material, and may be a surface-incidence type detector or a waveguide type detector.
Preferably, the capping layer 9 and the buried oxide layer 10 are both silicon dioxide material, and the substrate silicon 11 is silicon material.
Preferably, the cathode 8 and the anode 7 are both made of conductive metal materials, and the cathode through hole 6 and the anode through hole 5 are both filled with conductive metal materials.
Second embodiment:
the present embodiment is basically the same as the first embodiment, and the structures of the sige detector 1 and the heating device 2 are not changed, and the difference from the first embodiment is that the heating device 2 in the present embodiment is the doped silicon heater 4, and the doped silicon of the doped silicon heater 4 is implemented by doping the silicon between the buried oxide layer 10 and the capping layer 9. The doped silicon heater 4 is fabricated on the top surface of the buried oxide layer 10, beside the silicon germanium detector 1. Preferably, the spatial distance between the doped silicon heater 4 and the silicon germanium detector 1 is less than or equal to 10 μm.
The present invention is not limited to the above-described embodiments, and it will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and such modifications and improvements are also considered to be within the scope of the present invention. Those not described in detail in this specification are within the skill of the art.
Claims (6)
1. The utility model provides a thermal modulation silicon germanium photoelectric detection structure, sets up in silicon-based photonic integrated chip, silicon-based photonic integrated chip includes substrate silicon, covers at the buried oxide layer of substrate silicon top surface, and covers the overburden at buried oxide layer top surface, its characterized in that, thermal modulation silicon germanium photoelectric detection structure includes:
the silicon germanium detector is arranged on the top surface of the buried oxide layer and is positioned in the covering layer;
the heating device comprises a heater arranged in the covering layer, and the temperature of the silicon germanium detector can be changed when the heater is heated;
the two ends of the heater are respectively communicated with the top surface of the covering layer through the cathode through hole and the anode through hole, the heating device also comprises a cathode arranged at the top end of the cathode through hole and an anode arranged at the top end of the anode through hole, and the heater is heated when voltage is applied to the cathode and the anode;
the heater is a resistance heater, and the bottom surface of the heater is higher than the top surface of the silicon germanium detector.
2. The thermally tuned silicon germanium photodetecting structure according to claim 1, wherein: the space distance between the heater and the silicon germanium detector is less than or equal to 10 μm.
3. The thermally tuned silicon germanium photodetecting structure according to claim 2 wherein: the distance between the bottom surface of the heater and the top surface of the silicon germanium detector is less than or equal to 3 μm.
4. The thermally tuned silicon germanium photodetecting structure according to any of claims 1-3, characterized in that: the silicon germanium detector is a surface incidence type detector or a waveguide type detector.
5. The thermally tuned silicon germanium photodetecting structure according to any of claims 1-3, characterized in that: the cathode and the anode are both made of conductive metal materials, and the cathode through hole and the anode through hole are filled with the conductive metal materials.
6. The thermally tuned silicon germanium photodetecting structure according to any of claims 1-3, characterized in that: the buried oxide layer and the covering layer are both made of silicon dioxide materials, and the substrate silicon is made of silicon materials.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711437302.5A CN108063144B (en) | 2017-12-26 | 2017-12-26 | Thermal modulation silicon germanium photoelectric detection structure |
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| CN201711437302.5A CN108063144B (en) | 2017-12-26 | 2017-12-26 | Thermal modulation silicon germanium photoelectric detection structure |
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| CN108063144B true CN108063144B (en) | 2020-05-26 |
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| CN109727849B (en) * | 2018-12-17 | 2020-11-06 | 浙江大学 | Method for instantaneously improving responsivity of carrier depletion type silicon optical power monitor based on defect state mechanism without crosstalk |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102693988A (en) * | 2012-05-29 | 2012-09-26 | 上海丽恒光微电子科技有限公司 | Photodiode array and photodiode array forming method |
| CN105932077A (en) * | 2016-06-17 | 2016-09-07 | 华进半导体封装先导技术研发中心有限公司 | Silicon infrared optical detector structure and manufacturing method therefor |
| CN106463566A (en) * | 2014-03-10 | 2017-02-22 | 科锐安先进科技有限公司 | Germanium metal-contact-free near-ir photodetector |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9871153B2 (en) * | 2015-09-24 | 2018-01-16 | Elenion Technologies, Inc. | Photodetector with integrated temperature control element formed at least in part in a semiconductor layer |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102693988A (en) * | 2012-05-29 | 2012-09-26 | 上海丽恒光微电子科技有限公司 | Photodiode array and photodiode array forming method |
| CN106463566A (en) * | 2014-03-10 | 2017-02-22 | 科锐安先进科技有限公司 | Germanium metal-contact-free near-ir photodetector |
| CN105932077A (en) * | 2016-06-17 | 2016-09-07 | 华进半导体封装先导技术研发中心有限公司 | Silicon infrared optical detector structure and manufacturing method therefor |
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