CN104180790A - Novel Si-APD (Silicon-Avalanche Photo Diode) device - Google Patents
Novel Si-APD (Silicon-Avalanche Photo Diode) device Download PDFInfo
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- CN104180790A CN104180790A CN201410446822.2A CN201410446822A CN104180790A CN 104180790 A CN104180790 A CN 104180790A CN 201410446822 A CN201410446822 A CN 201410446822A CN 104180790 A CN104180790 A CN 104180790A
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- apd
- single tube
- dark current
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- 230000015556 catabolic process Effects 0.000 claims abstract description 16
- 239000000523 sample Substances 0.000 claims description 6
- 238000001514 detection method Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 abstract 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 238000005259 measurement Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C3/00—Measuring distances in line of sight; Optical rangefinders
- G01C3/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a novel Si-APD (Silicon-Avalanche Photo Diode) device. The novel Si-APD device comprises a first single Si-APD and a second single Si-APD which are arranged adjacently in parallel, wherein the first single Si-APD corresponds to a light window and serves as a light detection unit; the second single Si-APD is set in backlight and serves as a breakdown voltage detection unit; the first single Si-APD and the second single Si-APD share the same negative pole. Based on the principle that the properties of adjacent devices in the integrated circuit technology are consistent with each other, and paired Si-APDs are adopted; the first single Si-APD is used for detecting light and the second single Si-APD serves as the breakdown voltage detection unit; an optimal bias effect can be achieved, just by means of detecting the dark current of the second single Si-APD, stabilizing the value of the dark current via a negative feedback control loop, and utilizing the voltage when the value of the dark current is maintained at a set value to serve as the work bias voltage of the first single Si-APD, so that the complicacy problem of the traditional dynamic bias is solved, the complicacy degree and cost of a distance measuring system are lowered, and the novel Si-APD device is simple and practical.
Description
Technical field
The invention belongs to laser ranging field, be specifically related to a kind of New Si-APD device.
Background technology
Si-APD, Chinese is silicon avalanche photodiode, be mainly used in laser ranging field, this photoelectric conversion device has high sensitivity, its gain (M) is conventionally relevant with bias voltage, optimal bias voltage is that near voltage breakdown, gain is the highest, so the good design of bias voltage circuit will be brought high-gain.Yet the voltage breakdown of Si-APD and temperature correlation, its temperature coefficient is large, and while usually using, by 125 ℃ of variation of ambient temperature (45 ℃～+ 85 ℃), bias voltage can change with variation with temperature, substantially has tens volts to keep the stable of high-gain.
1), fixed bias current bias mode has:, bias voltage is more much lower than voltage breakdown, even temperature variation its bias voltage can not surpass voltage breakdown yet, (after surpassing voltage breakdown, can bring very large noise or device is directly damaged), but its gain also can be much lower and there is no a best result of use; 2), dynamic bias, the principle that while utilizing the bias voltage asymptotic breakdown voltage of device, noise can increase, makes a noise measuring feedback control loop and dynamically controls bias voltage, when temperature reduces, voltage breakdown diminishes, and noise increases, and circuit is turned bias voltage down diminishes noise; Vice versa.The service condition that makes device is best and reach the object of high-gain, though the method is brought into play the limiting performance of device, circuit is very complicated, and algorithm is also very complicated, and cost is higher.
Summary of the invention
For above-mentioned weak point of the prior art, the present invention aims to provide a kind of simple and effective New Si-APD device, has solved the complexity problem of dynamic bias, has reduced complexity and the cost of range measurement system, simple and practical.
To achieve these goals, technical scheme of the present invention: a kind of New Si-APD device, it comprises the adjacent Si-APD single tube being set up in parallel and the 2nd Si-APD single tube, the one Si-APD single tube do photo detecting unit corresponding with light window, the backlight setting of described the 2nd Si-APD single tube made voltage breakdown probe unit, and a Si-APD single tube and the 2nd Si-APD single tube share negative pole.
Further, the positive pole of a described Si-APD single tube connects photocurrent testing circuit; The positive pole of described the 2nd Si-APD single tube is electrically connected mutually by negative feedback control loop and the common negative pole of a described Si-APD single tube and the 2nd Si-APD single tube.
Further, described negative feedback control loop is the dark current in described the 2nd Si-APD single tube of detection, and controls corresponding bias voltage by linear change, is the operating bias voltage of a described Si-APD single tube when dark current is maintained to setting value.
Further, described negative feedback control loop comprises dark current testing circuit, control voltage generation circuit and the HVB high voltage bias circuit being electrically connected successively, and wherein, described control voltage generation circuit and a bias voltage initialization circuit are electrically connected.
Beneficial effect of the present invention: according to the consistent principle of adjacent devices performance in integrated circuit technology, the Si-APD of employing to tubular type, by a Si-APD single tube, carry out photodetection, by the 2nd Si-APD single tube as voltage breakdown probe unit, by detecting the dark current of the 2nd Si-APD single tube, and by negative feedback control loop, stablized the value of this dark current, magnitude of voltage when dark current maintains setting value during such as 10 microamperes is as the operating bias voltage of a Si-APD single tube, just can obtain the effect of just bias, and then solved the complexity problem of conventional dynamic biasing, also complexity and the cost of range measurement system have been reduced, simple and practical.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is structured flowchart of the present invention.
Embodiment
Below in conjunction with specific embodiment and accompanying drawing, further describe the present invention.
A kind of New Si-APD device as shown in Figure 1, it comprises the adjacent Si-APD single tube 11 being set up in parallel and the 2nd Si-APD single tube 12, the one Si-APD single tube 11 do photo detecting unit corresponding with light window, the backlight setting of described the 2nd Si-APD single tube 12 made voltage breakdown probe unit, and a Si-APD single tube 11 and the 2nd Si-APD single tube 12 share negative pole.
This invention is passed through tubular type Si-APD structure, one is as photo detecting unit, one is as voltage breakdown probe unit, by this voltage breakdown probe unit is carried out to dark current detection, and adopt negative feedback control loop to stablize the value of this dark current, voltage breakdown when dark current maintains setting value such as 10 microamperes, 5 microamperes etc. is the operating bias voltage of a Si-APD single tube, has finally realized the effect of just bias, has also just realized the high sensitivity of laser ranging.
Particularly, the positive pole of a described Si-APD single tube 11 connects photocurrent testing circuit 20; The positive pole of described the 2nd Si-APD single tube 12 is electrically connected mutually by negative feedback control loop and the common negative pole of a described Si-APD single tube 11 and the 2nd Si-APD single tube 12.This negative feedback control loop is common negative feedback control loop, its object is to detect the dark current in described the 2nd Si-APD single tube 12, and control corresponding bias voltage by linear change, when dark current is maintained to setting value, be the operating bias voltage of a described Si-APD single tube 11, by this negative feedback control loop, stablize the value of dark current.
And as common negative feedback control loop, it comprises dark current testing circuit 21, control voltage generation circuit 22 and the HVB high voltage bias circuit 23 being electrically connected successively, wherein, described control voltage generation circuit 22 and a bias voltage initialization circuit 24 are electrically connected.First by the dark current in 21 pairs of the 2nd Si-APD single tubes 12 of dark current testing circuit, detect, then by control voltage generation circuit 22 and bias voltage initialization circuit 24, stablizing this dark current is that setting value is as 10 microamperes, at this moment, by HVB high voltage bias circuit 23, formed the best effort bias voltage of a described Si-APD single tube 11.
The technical scheme above embodiment of the present invention being provided is described in detail, applied specific case herein the principle of the embodiment of the present invention and embodiment are set forth, the explanation of above embodiment is only applicable to help to understand the principle of the embodiment of the present invention; , for one of ordinary skill in the art, according to the embodiment of the present invention, in embodiment and range of application, all will change, in sum, this description should not be construed as limitation of the present invention meanwhile.
Claims (4)
1. New Si-APD device, it is characterized in that: described Si-APD device comprises the adjacent Si-APD single tube (11) being set up in parallel and the 2nd Si-APD single tube (12), the one Si-APD single tube (11) do photo detecting unit corresponding with light window, the backlight setting of described the 2nd Si-APD single tube (12) made voltage breakdown probe unit, and a Si-APD single tube (11) and the 2nd Si-APD single tube (12) share negative pole.
2. a kind of New Si-APD device according to claim 1, is characterized in that: the positive pole of a described Si-APD single tube (11) connects photocurrent testing circuit (20); The positive pole of described the 2nd Si-APD single tube (12) is electrically connected mutually by negative feedback control loop and the common negative pole of a described Si-APD single tube (11) and the 2nd Si-APD single tube (12).
3. a kind of New Si-APD device according to claim 2, it is characterized in that: described negative feedback control loop is for detecting the dark current in described the 2nd Si-APD single tube (12), and control corresponding bias voltage by linear change, when dark current is maintained to setting value, be the operating bias voltage of a described Si-APD single tube (11).
4. a kind of New Si-APD device according to claim 3, it is characterized in that: described negative feedback control loop comprises dark current testing circuit (21), control voltage generation circuit (22) and the HVB high voltage bias circuit (23) being electrically connected successively, wherein, described control voltage generation circuit (22) is electrically connected with a bias voltage initialization circuit (24).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410446822.2A CN104180790B (en) | 2014-09-03 | 2014-09-03 | Si-APD (Silicon-Avalanche Photo Diode) device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410446822.2A CN104180790B (en) | 2014-09-03 | 2014-09-03 | Si-APD (Silicon-Avalanche Photo Diode) device |
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| CN104180790A true CN104180790A (en) | 2014-12-03 |
| CN104180790B CN104180790B (en) | 2017-02-15 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105548848A (en) * | 2015-12-11 | 2016-05-04 | 武汉中派科技有限责任公司 | Device, equipment and method for measuring breakdown voltage |
| CN105827236A (en) * | 2016-03-09 | 2016-08-03 | 合肥汇芯半导体科技有限公司 | Circuit structure used for driving silicon-based avalanche photodiode |
| WO2021179318A1 (en) * | 2020-03-13 | 2021-09-16 | 华为技术有限公司 | Bias voltage adjusting method and apparatus, and light module |
| CN114966360A (en) * | 2022-07-27 | 2022-08-30 | 成都光创联科技有限公司 | System and method for testing avalanche voltage of optical device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0026018A1 (en) * | 1979-09-19 | 1981-04-01 | Constructions Electro-Mecaniques D'amiens | Washing and spin drying machine, the drum being driven by an immersed belt |
| CN1983879A (en) * | 2005-09-28 | 2007-06-20 | 英特尔公司 | Optical receiver protection circuit |
| CN102246058A (en) * | 2008-12-15 | 2011-11-16 | 皇家飞利浦电子股份有限公司 | Temperature compensation circuit for silicon photomultipliers and other single photon counters |
| CN102341727A (en) * | 2009-03-06 | 2012-02-01 | 皇家飞利浦电子股份有限公司 | Advanced temperature compensation and control circuit for single photon counters |
| CN102388321A (en) * | 2008-12-22 | 2012-03-21 | 皇家飞利浦电子股份有限公司 | High dynamic range light sensor |
| CN103017729A (en) * | 2012-11-20 | 2013-04-03 | 王振兴 | Method for improving precision of laser range finder |
| CN103457673A (en) * | 2013-07-26 | 2013-12-18 | 厦门优迅高速芯片有限公司 | Method and device for improving saturated light power of APD optical receiver |
-
2014
- 2014-09-03 CN CN201410446822.2A patent/CN104180790B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0026018A1 (en) * | 1979-09-19 | 1981-04-01 | Constructions Electro-Mecaniques D'amiens | Washing and spin drying machine, the drum being driven by an immersed belt |
| CN1983879A (en) * | 2005-09-28 | 2007-06-20 | 英特尔公司 | Optical receiver protection circuit |
| CN102246058A (en) * | 2008-12-15 | 2011-11-16 | 皇家飞利浦电子股份有限公司 | Temperature compensation circuit for silicon photomultipliers and other single photon counters |
| CN102388321A (en) * | 2008-12-22 | 2012-03-21 | 皇家飞利浦电子股份有限公司 | High dynamic range light sensor |
| CN102341727A (en) * | 2009-03-06 | 2012-02-01 | 皇家飞利浦电子股份有限公司 | Advanced temperature compensation and control circuit for single photon counters |
| CN103017729A (en) * | 2012-11-20 | 2013-04-03 | 王振兴 | Method for improving precision of laser range finder |
| CN103457673A (en) * | 2013-07-26 | 2013-12-18 | 厦门优迅高速芯片有限公司 | Method and device for improving saturated light power of APD optical receiver |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105548848A (en) * | 2015-12-11 | 2016-05-04 | 武汉中派科技有限责任公司 | Device, equipment and method for measuring breakdown voltage |
| WO2017097148A1 (en) * | 2015-12-11 | 2017-06-15 | 武汉中派科技有限责任公司 | Apparatus, device and method for measuring breakdown voltage |
| CN105548848B (en) * | 2015-12-11 | 2018-09-21 | 中派科技（深圳）有限责任公司 | Device, device and method for measuring breakdown voltage |
| US10838089B2 (en) | 2015-12-11 | 2020-11-17 | Zhongpai S&T (Shenzhen) Co., Ltd | Apparatus, device and method for measuring breakdown voltage |
| CN105827236A (en) * | 2016-03-09 | 2016-08-03 | 合肥汇芯半导体科技有限公司 | Circuit structure used for driving silicon-based avalanche photodiode |
| WO2021179318A1 (en) * | 2020-03-13 | 2021-09-16 | 华为技术有限公司 | Bias voltage adjusting method and apparatus, and light module |
| CN115039052A (en) * | 2020-03-13 | 2022-09-09 | 华为技术有限公司 | Bias voltage adjusting method and device and optical module |
| CN115039052B (en) * | 2020-03-13 | 2024-04-12 | 华为技术有限公司 | Bias voltage adjusting method and device and optical module |
| CN114966360A (en) * | 2022-07-27 | 2022-08-30 | 成都光创联科技有限公司 | System and method for testing avalanche voltage of optical device |
| CN114966360B (en) * | 2022-07-27 | 2022-10-25 | 成都光创联科技有限公司 | System and method for testing avalanche voltage of optical device |
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| CN104180790B (en) | 2017-02-15 |
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