CN105352606A - Reading circuit of uncooled infrared focal plane array detector - Google Patents

Reading circuit of uncooled infrared focal plane array detector Download PDF

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CN105352606A
CN105352606A CN201510513217.7A CN201510513217A CN105352606A CN 105352606 A CN105352606 A CN 105352606A CN 201510513217 A CN201510513217 A CN 201510513217A CN 105352606 A CN105352606 A CN 105352606A
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described
circuit
transistor
connected
micro
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CN201510513217.7A
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CN105352606B (en
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吕坚
顾志冰
胡博
车凯
贾超超
周云
阙隆成
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电子科技大学
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Abstract

The embodiment of the present invention discloses a reading circuit of an uncooled infrared focal plane array detector. The reading circuit provided by the invention comprises; a bias thermal stability circuit 10 including a channel-level reference micrometering bolometer Rb and configured to supply a constant bias current for the channel-level reference micrometering bolometer Rb; a detection circuit 20 configured to connect a pixel-level detection micrometering bolometer Rs and the bias thermal stability circuit 10 and generate detection output signals according to the reference micrometering bolometer Rb and the detection micrometering bolometer Rs; and an integral circuit 30 configured to connect with the detection circuit 20 and perform integration according to the detection output signals of the detection circuit 20 to obtain output signals. According to the embodiment of the invention, the reading circuit is configured to supply a steady current path to a reference micrometering bolometer so that the bias thermal stabilization is realized, the uniformity and the reliability of the whole circuit is greatly improved, and the high pressure resistance performance of the circuit and the adaptability of the circuit to the environment are greatly increased.

Description

A kind of sensing circuit of non-refrigerate infrared focal plane array seeker

A kind of sensing circuit of non-refrigerate infrared focal plane array seeker

Technical field

The present invention relates to infrared focal plane array seeker technical field, especially relate to a kind of sensing circuit of non-refrigerate infrared focal plane array seeker.

Background technology

Night vision technology, is divided into both direction: low-light level imaging technology and infrared thermal imaging technique.Night vision technology has critical role in modern war, and the weaponry of equipment night vision apparatus, throughout aeroamphibious optimal in structure, is applied to large, medium and small armament systems, therefore grasps advanced night vision technology and has vital meaning for control battlefield situation.Compared with low-light level imaging technology, infrared thermal imaging technique complex manufacturing technology, production maintenance cost is high, but in operating distance, picture quality, share problem round the clock, significant advantage can be had in application etc.

The core technology of infrared thermal imaging technique is detector technology.According to working temperature classification, infrared eye is divided into refrigeration mode and non-refrigeration type.Uncooled ir thermal imaging has that price is low, volume is little, low in energy consumption, dependable performance, the advantage such as easy to operate, becomes inevitable mainstream technology.

Non-refrigerate infrared focal plane array seeker can work at normal temperatures, without the need to refrigeration plant, and have that quality is light, volume is little, the life-span is long, cost is low, power consumption is little, startup is fast and the advantage such as good stability, meet civilian infrared system and the military infrared system of part to Long Wave Infrared Probe in the urgent need to, thus make this technology obtain development fast and apply widely.Sensing circuit (ROIC) is one of critical component of uncooled infrared focal plane array (IRFPA), and its major function the feeble signal of infrared eye induction is carried out to the parallel/serial row conversion of pre-service (as integration, amplification, filtering, sampling/maintenance etc.) and array signal.Depending on the difference of detector material therefor and working method, reading circuit structure changes thereupon, to obtain maximum signal to noise ratio (snr) under the requirement meeting frame frequency.

Microbolometer FPA array (FPA) has higher sensitivity, is most widely used a kind of non-refrigerate infrared focal plane array seeker.Its principle of work is temperature change after the infrared radiation of thermo-sensitive material absorption incidence, thus causes the change of self-resistance value, is detected the size of infrared radiation signal by the change of measuring its resistance value.The semi-girder micro-bridge structure that micro-metering bolometer generally adopts micromachining technology to make, bridge floor deposits the thermo-sensitive material that one deck has high temperature coefficient of resistance (TCR), bridge floor has excellent mechanical performances by two and is coated with the bridge leg support of conductive material, the contact point of bridge leg and substrate is bridge pier, and bridge pier is electrically connected on the silicon sensing circuit (ROIC) under micro-metering bolometer FPA.By bridge leg and bridge pier, thermo-sensitive material is connected in the electricity passage of sensing circuit, forms one to responsive to temperature and the pixel cell be connected on sensing circuit.The heat that thermo-sensitive material absorbs is primarily of three sources: underlayer temperature change cause thermo-sensitive material temperature variation, the absorption thermo-sensitive material temperature variation that causes of amount of infrared radiation and the generation of micro-metering bolometer biasing circuit the thermo-sensitive material temperature variation that causes of biased heat.

Through the progress of development for many years and technology, non-refrigerate infrared focal plane array seeker meets use needs on noise, but people have had higher requirement on non-refrigerated infrared detector performance, picture quality, stability, power consumption, volume and cost.

Summary of the invention

An object of the present invention is to provide and a kind ofly the biased heat of the biasing circuit of micro-metering bolometer can be made more stable thus eliminate or the sensing circuit of non-refrigerate infrared focal plane array seeker of adverse effect that the change that reduces biased heat brings.

Technical scheme disclosed by the invention comprises:

Provide a kind of sensing circuit of non-refrigerate infrared focal plane array seeker, it is characterized in that, comprising: biased thermally-stabilised circuit 10, described biased thermally-stabilised circuit 10 comprises the reference micro-metering bolometer R of channel level band be described with reference to micro-metering bolometer R bconstant bias current is provided; Testing circuit 20, described testing circuit 20 is connected to the detection micro-metering bolometer R of Pixel-level swith described biased thermally-stabilised circuit 10, and according to described with reference to micro-metering bolometer R bwith described detection micro-metering bolometer R sproduce detection output signal; Integrating circuit 30, described integrating circuit 30 is connected to described testing circuit 20 and carries out integration to the detection output signal of described testing circuit 20, obtains output signal.

In one embodiment of the present of invention, described biased thermally-stabilised circuit 10 also comprises the 4th transistor MP4 of the first transistor MP1, the transistor seconds MP2 of chip-scale of chip-scale, the third transistor MP3 of channel level and channel level, wherein: the source electrode of described the first transistor MP1 is connected to system power supply V dD, the drain electrode of described the first transistor MP1 is by the first constant current source 101 ground connection, and the grid of described the first transistor MP1 is connected to the drain electrode of described the first transistor MP1; The source electrode of described transistor seconds MP2 is connected to system power supply V dD, the drain electrode of described transistor seconds MP2 is by the second constant current source 102 ground connection, and the grid of described transistor seconds MP2 is connected to the drain electrode of described transistor seconds MP2 and is connected to described with reference to micro-metering bolometer R bone end; Described with reference to micro-metering bolometer R bthe other end be connected to the source electrode of described third transistor MP3; The drain electrode of described third transistor MP3 is connected to the source electrode of described 4th transistor MP4 and is connected to described testing circuit 20, and the grid of described third transistor MP3 is connected to the grid of described 4th transistor MP4; The grounded drain of described 4th transistor MP4.

In one embodiment of the present of invention, described testing circuit 20 comprises the 5th transistor MP5, wherein: the source electrode of described 5th transistor MP5 is connected to the drain electrode of described third transistor MP3 and is connected to described integrating circuit 30, the drain electrode of described 5th transistor MP5 is connected to described detection micro-metering bolometer R sone end, the grid of described 5th transistor MP5 is connected to bias voltage V fid; Described detection micro-metering bolometer R sother end ground connection.

In one embodiment of the present of invention, the source electrode of described 5th transistor MP5 is connected to drain electrode and the described integrating circuit 30 of described third transistor MP3 by switch S 1.

The sensing circuit of embodiments of the invention is utilized as and provides stable current path with reference to micro-metering bolometer, achieve the stable of biased heat, greatly improve homogeneity and the reliability of integrated circuit, substantially increase the anti-voltage resistance of circuit and the adaptability to environment simultaneously.

Accompanying drawing explanation

Fig. 1 is the structural representation of the sensing circuit of the non-refrigerate infrared focal plane array seeker of one embodiment of the invention.

Fig. 2 is that traditional sensing circuit output voltage is with the analogous diagram of target temperature under various substrate.

Fig. 3 is that the sensing circuit output voltage of the embodiment of the present invention is with the analogous diagram of target temperature under various substrate.

Embodiment

The concrete structure of the sensing circuit of the non-refrigerate infrared focal plane array seeker of embodiments of the invention is described in detail below in conjunction with accompanying drawing.

Fig. 1 is the structural representation of the sensing circuit of the non-refrigerate infrared focal plane array seeker of one embodiment of the invention.

As shown in Figure 1, in some embodiments of the invention, a kind of sensing circuit of non-refrigerate infrared focal plane array seeker comprises biased thermally-stabilised circuit 10, testing circuit 20 and integrating circuit 30.

Biased thermally-stabilised circuit 10 comprises the reference micro-metering bolometer R of channel level band be described with reference to micro-metering bolometer R bconstant bias current is provided.Testing circuit 20 is connected to the detection micro-metering bolometer R of Pixel-level swith this biased thermally-stabilised circuit 10, and according to this reference micro-metering bolometer R bwith this detection micro-metering bolometer R sproduce detection output signal.Integrating circuit 30 is connected to testing circuit 20 and the detection of receiving test circuit 20 output signal, and carries out integration to the detection output signal of testing circuit 20, thus obtains output signal.

In embodiments of the invention, biased thermally-stabilised circuit 10 is with reference to micro-metering bolometer R bconstant bias current is provided, thus ensure that in biasing circuit, the biased heat of blind picture dot is constant, substantially increases homogeneity and the reliability of integrated circuit, also substantially increase the anti-voltage resistance of circuit and the adaptability to environment simultaneously.

As shown in Figure 1, in some embodiments of the present invention, biased thermally-stabilised circuit 10 also comprises the 4th transistor MP4 of the first transistor MP1, the transistor seconds MP2 of chip-scale of chip-scale, the third transistor MP3 of channel level and channel level.

The source electrode of the first transistor MP1 is connected to system power supply V dD; The drain electrode of the first transistor MP1 is by the first constant current source 101 ground connection; The grid of the first transistor MP1 is connected to the drain electrode of the first transistor MP1.

The source electrode of transistor seconds MP2 is connected to system power supply V dD; The drain electrode of transistor seconds MP2 is by the second constant current source 102 ground connection; The grid of transistor seconds MP2 is connected to the drain electrode of transistor seconds MP2 and is connected to reference to micro-metering bolometer R bone end; With reference to micro-metering bolometer R bthe other end be connected to the source electrode of third transistor MP3.

The drain electrode of third transistor MP3 is connected to the source electrode of the 4th transistor MP4 and is connected to testing circuit 20(such as, is connected to the source electrode of the 5th transistor MP5, as shown in Figure 1); The grid of third transistor MP3 is connected to the grid of the 4th transistor MP4; The grounded drain of the 4th transistor MP4.

As shown in Figure 1, in some embodiments of the present invention, testing circuit 20 comprises the 5th transistor MP5, wherein the source electrode of the 5th transistor MP5 is connected to the drain electrode of third transistor MP3 and is connected to integrating circuit 30(such as, be connected to the negative input of the operational amplifier of integrating circuit 30, as shown in Figure 1); The drain electrode of the 5th transistor MP5 is connected to detection micro-metering bolometer R sone end, the grid of the 5th transistor MP5 is connected to bias voltage V fid; Detection micro-metering bolometer R sother end ground connection.

In some embodiments of the present invention, testing circuit 20 can also comprise switch S 1, and the source electrode of the 5th transistor MP5 is connected to drain electrode and the integrating circuit 30 of third transistor MP3 by switch S 1.

In embodiments of the invention, integrating circuit 30 can be integrating circuit conventional in this area, such as shown in Figure 1, does not repeat them here.

The principle of work of the circuit of the brief description embodiment of the present invention below.

Such as, in the embodiment shown in Fig. 1, the bias voltage V produced by chip-scale PMOS MP1 current-mirror structure ebthere is provided input to the biased thermally-stabilised PMOS MP3 of circuit 10 and the grid of MP4.The source class interface channel level of MP3 is with reference to micro-metering bolometer Rb, and the other end with reference to micro-metering bolometer Rb is connected to the bias voltage V produced by chip-scale PMOS PM2 current-mirror structure sK.The leakage level of MP4 is connected to ground.In scanning neutral, when testing circuit 20 is not connected, channel level is with reference to micro-metering bolometer R b, MP3 and MP4 constitute a complete circuit, the electric current flowing through MP3 drain electrode is I bIAS.In scan period, testing circuit 20 accesses biased thermally-stabilised circuit 10, and due to the operational amplifier negative feedback structure for amplifying in integrating circuit 30, meet empty billet part, the positive-negative input end voltage of operational amplifier is equal.Therefore when testing circuit 20 accesses in biased thermally-stabilised circuit 10, the drain terminal voltage of MP3 equals integrator positive input voltage V ref.Because MP4 is PMOS, as PMOS gate source voltage V gSbe less than or equal to threshold voltage V thtime, PMOS conducting, produces drain-source current I d.Get suitable integrator positive input voltage V refwith chip-scale bias voltage V eb, drain-source voltage V gS=V gv s=V refv ebmeet V refv eb>V th, that is, when testing circuit 20 accesses biased thermally-stabilised circuit 10, MP2 is due to V refv eb>V thturn off.Get suitable MP2 breadth length ratio, can make now to flow through MP3 drain terminal electric current is still I biasconstant.

In the circuit of embodiments of the invention, by making the reference micro-metering bolometer R flowing through channel level bwith the electric current I of PMOS MP3 biasremain unchanged, thus make the integration current that obtains i int only detect micro-metering bolometer R with Pixel-level srelevant, that is:

I int=I BIAS–I s=b–alpha×ΔT scene(1)

In formula (1) bfor constant, I sfor flowing through detection micro-metering bolometer R selectric current, alpharepresent the temperature coefficient of micro-metering bolometer, Δ T scenerepresent the detection micro-metering bolometer R that infrared radiation causes stemperature variation.。

As can be seen from formula (1), due to integration current i int with the reference micro-metering bolometer R of channel level bbiased heat it doesn't matter, obtain last integral output voltage v out for:

In formula (2), v ref for reference voltage, t int for integral time, C intfor the capacitance of the integrating capacitor in integrating circuit 30.Visible, the integral output voltage obtained v out only relevant to radiation temperature, micro-metering bolometer and circuit parameter characteristic, it doesn't matter with biased heat.

Visible, the present invention utilizes to channel level micro-metering bolometer R ba stable current branch is provided to obtain the method for stable biased heat, the biased heat of micro-metering bolometer is not changed in time, thus make the resistance variations of micro-metering bolometer only relevant with the infrared intensity of its absorption incidence, improve the output accuracy of non-refrigerating infrared focal plane sensing circuit.

Such as, Fig. 2 and Fig. 3 respectively illustrates the sensing circuit output voltage of traditional sensing circuit and the embodiment of the present invention with the analogous diagram of target temperature under various substrate.Visible, the sensing circuit that the biased ratio of specific heat of the sensing circuit of the embodiment of the present invention is traditional is more stable.

Visible, the sensing circuit of embodiments of the invention is utilized as and provides stable current path with reference to micro-metering bolometer, achieve the stable of biased heat, greatly improve homogeneity and the reliability of integrated circuit, substantially increase the anti-voltage resistance of circuit and the adaptability to environment simultaneously.

Described the present invention by specific embodiment above, but the present invention is not limited to these specific embodiments.It will be understood by those skilled in the art that and can also make various amendment, equivalent replacement, change etc. to the present invention, as long as these conversion do not deviate from spirit of the present invention, all should within protection scope of the present invention.In addition, " embodiment " described in above many places represents different embodiments, can certainly by its all or part of combination in one embodiment.

Claims (4)

1. a sensing circuit for non-refrigerate infrared focal plane array seeker, is characterized in that, comprising:
Biased thermally-stabilised circuit (10), described biased thermally-stabilised circuit (10) comprises the reference micro-metering bolometer (R of channel level b) and be described with reference to micro-metering bolometer (R b) constant bias current is provided;
Testing circuit (20), described testing circuit (20) is connected to the detection micro-metering bolometer (R of Pixel-level s) and described biased thermally-stabilised circuit (10), and according to described with reference to micro-metering bolometer (R b) and described detection micro-metering bolometer (R s) produce detection output signal;
Integrating circuit (30), described integrating circuit (30) is connected to described testing circuit (20) and carries out integration to the detection output signal of described testing circuit (20), obtains output signal.
2. sensing circuit as claimed in claim 1, it is characterized in that, described biased thermally-stabilised circuit (10) also comprises the 4th transistor (MP4) of the first transistor (MP1) of chip-scale, the transistor seconds (MP2) of chip-scale, the third transistor (MP3) of channel level and channel level, wherein:
The source electrode of described the first transistor (MP1) is connected to system power supply (V dD), the drain electrode of described the first transistor (MP1) is by the first constant current source (101) ground connection, and the grid of described the first transistor (MP1) is connected to the drain electrode of described the first transistor (MP1);
The source electrode of described transistor seconds (MP2) is connected to system power supply (V dD), the drain electrode of described transistor seconds (MP2) is by the second constant current source (102) ground connection, and the grid of described transistor seconds (MP2) is connected to the drain electrode of described transistor seconds (MP2) and is connected to described with reference to micro-metering bolometer (R b) one end;
Described with reference to micro-metering bolometer (R b) the other end be connected to the source electrode of described third transistor (MP3);
The drain electrode of described third transistor (MP3) is connected to the source electrode of described 4th transistor (MP4) and is connected to described testing circuit (20), and the grid of described third transistor (MP3) is connected to the grid of described 4th transistor (MP4);
The grounded drain of described 4th transistor (MP4).
3. circuit as described in claim 1 or 2, it is characterized in that, described testing circuit (20) comprises the 5th transistor (MP5), wherein:
The source electrode of described 5th transistor (MP5) is connected to the drain electrode of described third transistor (MP3) and is connected to described integrating circuit (30), and the drain electrode of described 5th transistor (MP5) is connected to described detection micro-metering bolometer (R s) one end, the grid of described 5th transistor (MP5) is connected to bias voltage (V fid);
Described detection micro-metering bolometer (R s) other end ground connection.
4. circuit as claimed in claim 3, is characterized in that, the source electrode of described 5th transistor (MP5) is connected to drain electrode and the described integrating circuit (30) of described third transistor (MP3) by switch (S1).
CN201510513217.7A 2015-08-20 2015-08-20 A kind of reading circuit of non-refrigerate infrared focal plane array seeker CN105352606B (en)

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Publication number Priority date Publication date Assignee Title
CN107727243A (en) * 2017-11-22 2018-02-23 北方广微科技有限公司 Un-cooled infrared focal plane array reading circuit

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CN107727243B (en) * 2017-11-22 2019-12-10 北方广微科技有限公司 Uncooled infrared focal plane array readout circuit

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