KR101892694B1

KR101892694B1 - Uv detector

Info

Publication number: KR101892694B1
Application number: KR1020150022402A
Authority: KR
Inventors: 정준호; 이지혜; 정소희; 최준혁; 최대근; 정주연; 전소희; 이응숙
Original assignee: 한국기계연구원
Priority date: 2015-02-13
Filing date: 2015-02-13
Publication date: 2018-08-28
Also published as: KR20160099995A; WO2016129962A1

Abstract

An ultraviolet detector according to an embodiment of the present invention includes an optical filter unit into which ultraviolet light is incident, a wavelength conversion unit that converts ultraviolet light that has passed through the optical filter unit into visible light, and a photoelectric conversion unit that measures the amount of visible light, And a metal layer having a plurality of nano holes.

Description

Ultraviolet detector {UV DETECTOR}

The present invention relates to an ultraviolet detector.

The light of ultraviolet wavelength exists in various kinds such as natural light generated from the sunlight and artificially generated light. In addition, due to the development of industrial technology, the light of ultraviolet wavelength has been continuously increasingly alerted to environmental pollution both at home and abroad. Due to the high population density, population concentration centered on large cities, Pollution is serious.

In order to accurately determine the environmental pollution situation, technology for monitoring and controlling environmental impact is needed.

In particular, ultraviolet rays cause fatal damage to the human body. Ultraviolet rays are 100 nm to 400 nm sunlight spectrum, and are classified into UVA, UVB, and UVC by wavelength band. UVA accounts for 98% of all UV rays, wrinkles and aging. UVC is mostly absorbed by the ozone layer and negligible on the earth's surface, but 2% UVB causes cataracts, skin cancer, to be.

In order to measure the ultraviolet ray, a color conversion polymer was used, or a silicon diode or a wavelength modulating material was used.

However, color conversion polymers are inexpensive, but it is difficult to quantitatively measure the intensity of ultraviolet rays, and the reaction rate is slow. The silicon diode can quantitatively measure the intensity of ultraviolet rays. However, since the thickness of the absorption region for absorbing ultraviolet rays is thin, an expensive process is required, and the life time is short. In addition, since the wavelength modulating material absorbs a wide range of ultraviolet rays, there is a disadvantage that the detection wavelength resolution of ultraviolet rays is low.

Accordingly, it is an object of the present invention to provide an ultraviolet ray detector having a low resolution and easily detecting an ultraviolet ray having a specific wavelength.

It is another object of the present invention to provide an ultraviolet ray detector capable of quantitatively measuring the ultraviolet ray.

According to an aspect of the present invention, there is provided an ultraviolet ray detector including an optical filter unit into which ultraviolet rays are incident, a wavelength conversion unit that converts ultraviolet rays passing through the optical filter unit into visible light, And the optical filter portion is made of a metal layer having a plurality of nano holes.

The wavelength converter may include a quantum dot or a fluorescent material.

The wavelength converter may further include a polymer material or an oxide.

The quantum dot or the fluorescent material may be contained in an amount of 0.01 wt% to 33 wt% of the polymer material or the oxide.

The photoelectric conversion unit may be any one of a photovoltaic cell, a photodiode, a CCD, and a CMOS.

The width of the nano holes may be 20 nm to 200 nm.

The thickness of the optical filter part may be 1 nm to 200 nm.

The period of the nano holes may be 40 nm to 500 nm.

The planar shape of the nano holes may be circular or polygonal.

According to another aspect of the present invention, there is provided an ultraviolet ray detector including a plurality of ultraviolet ray detecting units, wherein the ultraviolet ray detecting unit includes an optical filter unit having a plurality of nanoholes, A wavelength conversion unit for converting ultraviolet light that has passed through the optical filter unit into visible light, and a photoelectric conversion unit for measuring the amount of visible light, and the widths of the nanoholes of the neighboring ultraviolet detection units are different from each other.

The periods of the nano holes in the neighboring ultraviolet detecting units may be different from each other.

The period of the nano holes may be different from 40 nm to 500 nm, and the width of the nano holes may be 20 nm to 200 nm.

The thickness of the optical filter part may be 1 nm to 200 nm.

The wavelength converter may include a quantum dot or a fluorescent material.

The wavelength converter may further include a polymer material or an oxide.

The planar shape of the nano holes may be circular or polygonal.

When the ultraviolet detector is formed as in the present invention, ultraviolet light can be quantitatively measured while increasing resolution of the ultraviolet ray measurement.

1 is a schematic cross-sectional view of an ultraviolet detector according to an embodiment of the present invention.
2 to 9 are plan views of the nano holes of the ultraviolet detector according to the embodiments of the present invention.
10 is a graph illustrating an optical signal transmission process according to an embodiment of the present invention.
11 and 12 are cross-sectional views of ultraviolet detectors according to other embodiments of the present invention.
13 is a perspective view schematically showing an ultraviolet detector according to another embodiment of the present invention.
14 is a graph showing currents according to wavelengths measured from the ultraviolet detector of FIG.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, which will be readily apparent to those skilled in the art to which the present invention pertains. The present invention may be embodied in many different forms and is not limited to the embodiments described herein.

In order to clearly illustrate the present invention, parts not related to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the specification.

Throughout the specification, when a part is referred to as being "connected" to another part, it includes not only "directly connected" but also "indirectly connected" between other parts. Also, when a part is referred to as "including " an element, it does not exclude other elements unless specifically stated otherwise.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.

1 is a schematic cross-sectional view of an ultraviolet detector according to an embodiment of the present invention.

1, an ultraviolet ray detector 1000 according to the present invention includes a substrate 100, an optical filter unit 200 formed on the substrate 100, a wavelength modulation unit 200 formed on the optical filter unit 200, And a photoelectric conversion unit 400 for receiving light from the wavelength modulation unit 300. 1, the optical filter unit 200 is formed on the substrate 100. However, the substrate 100 may be positioned (not shown) on the optical filter unit 200 and the wavelength modulation unit 300 may be located.

The substrate 100 is a transparent substrate capable of transmitting light such as quartz, glass, polycarbonate, PET (polyethylene terephthalate), PMMA (poly (methyl methacrylate) .

The optical filter unit 200 may be a metal layer having a plurality of nano holes H for sorting ultraviolet rays of a specific range. The metal layer may be formed of, for example, Al, Ti, Ti, Au, Ag, Cr, Mn, Fe, (Ni), Cu, Zn, Ga, Zr, Mo, Pd, Cd, In, Sn ), Antimony (Sb), tungsten (W), platinum (Pt), lead (Pb), bismuth (Bi), magnesium (Mg), calcium (Ca), vanadium , Rhodium (Rh), ruthenium (Ru), yttrium (Y), alloys thereof, metallic oxides and the like.

The width D1 of the nano hole H may be 20 nm to 200 nm and the period D2 of the nano hole may be 40 nm to 500 nm. At this time, the thickness D3 of the optical filter unit 200 may be 1 nm to 200 nm

The planar shape of the nano hole H may be circular or polygonal as shown in FIGS. 2 to 4, and may be a cross (+) shape in which polygons intersect as shown in FIG. 5, As shown in Fig.

As shown in FIGS. 7 and 8, the unit nanoholes can be repeatedly arranged. In addition, as shown in FIG. 9, the nano holes H may be repeatedly arranged in groups of different unit nanoholes mixed with each other. They may be regularly arranged in a matrix, but are not limited thereto and may be arranged in any form as required.

This may vary depending on the wavelength to be selected, and the wavelength to be selected varies depending on the planar shape, the width D1 and the period D2 of the nano hole H. For example, when the unit nanoholes are circularly arranged as shown in FIG. 3, the width (or diameter) D1 of the unit nanoholes is 40 nm to 60 nm and the period (D2) May be between 110 nm and 130 nm. At this time, the thickness D3 of the optical filter unit 200 may be 1 nm to 200 nm.

Referring again to FIG. 1, the wavelength modulating unit 300 converts ultraviolet rays passing through the optical filter unit 200 into visible light, and the intensity of visible light changes according to the wavelength and intensity of the incident ultraviolet light.

The wavelength modulating unit 300 may include a quantum dot, a fluorescent or a phosphorescent material.

The quantum dot has a quantum confinement effect with a nano-sized crystallinity between 0.1 nm and 50 nm. The quantum dot has various band gaps depending on the quantum dot size, and absorbs light of a wavelength smaller than its band gap, It emits light of wavelength.

These quantum dots may be composed of a core and a shell. For example, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, Or a Group 3-Group material such as SrSe, SrTe, BaS, BaSe, BaTe, or the like, or a 3-5 group material such as GaN, GaP, GaAs, GaSb, InN, InP, InSb, 4 group material.

Fluorescent or phosphorescent material, for example, aluminum oxide fluorescent powder (yttrium aluminum garnet compound _{Y 3 Al 5 O 12: Ce} 3 +, terbium aluminum garnet compound _{(Tb 3 Al 5 O 12:} Ce), silicon oxide fluorescent powder (for example, Doped Zn ₂ SiO ₄ ) fluorescent powder, a nitride fluorescent powder (for example, (Ca, Sr, Ba) _x Si _y N _z : Eu fluorescent powder) or a nitrogen oxide (Eg, europium-activated nitrogen oxide fluorescent powder), bis (2,4,6-trichlorophenyl) oxalate, rhodamine B And may include at least one.

The photoelectric conversion unit 400 may be a photoelectric device in which visible light converted into visible light by the wavelength modulation unit 300 is incident and generates a current by the visible light. For example, the photoelectric conversion unit 400 may include a photocell, a photodiode, (charge coupled device).

For example, the photoelectric conversion unit 400 may be a photovoltaic cell having a first electrode 41, a photoactive layer 43, and a second electrode 45.

The first electrode 41 is a surface on which visible light is incident and has a high light transmittance and excellent electrical conductivity. For example, the first electrode 41 may include at least one of indium tin oxide (ITO), indium zinc oxide (IZO) And may have a light transmittance of about 80% or greater. At this time, the ZnO layer may be doped with a conductive impurity such as aluminum (Al) or boron (B) to have a low resistance value.

The photoactive layer 43 includes a semiconductor material forming a PN junction, and may include a CIS-based inorganic semiconductor or an organic semiconductor.

The second electrode 45 may be made of molybdenum (Mo), for example, a metal having excellent electrical contact properties with the material of the photoactive layer 43 and excellent electrical conductivity.

The visible light passing through the wavelength modulation unit 300 can not be accurately known even if it is visually recognized. However, since the amount of current generated in accordance with the brightness (or amount) of visible light differs from that of the photoelectric element, visible light that has passed through the wavelength modulation part 300 is incident on the photoelectric conversion part 400 formed of photoelectric elements, The amount can be accurately grasped.

10 is a graph illustrating an optical signal transmission process according to an embodiment of the present invention.

Referring to FIGS. 1 and 10, when light (A) including ultraviolet rays is incident on the ultraviolet ray detector according to an embodiment of the present invention, only ultraviolet rays pass through the optical filter unit 200. At this time, according to the shape of the nanohole of the optical filter unit 200 according to the embodiment of the present invention, only the ultraviolet light of the specific wavelength B is passed.

Ultraviolet rays passing through the optical filter unit 200 pass through the wavelength modulating unit 300 and change in wavelength to be converted into visible light C from ultraviolet rays. The visible light having passed through the wavelength modulation unit 300 is incident on the photoelectric conversion unit 400 to generate a current. The photoelectric conversion unit 400 can determine the intensity of the visible light by measuring the generated current because the amount of the generated current varies depending on the intensity of the incident visible light.

Since the intensity and wavelength of the visible light depend on the intensity and wavelength of the incident ultraviolet light, the intensity and wavelength of ultraviolet light can be determined from the intensity and wavelength of the visible light obtained through the photoelectric conversion unit.

11 and 12 are cross-sectional views of ultraviolet detectors according to other embodiments of the present invention.

Since most of the ultraviolet ray detectors 1002 of Fig. 11 are the same as those of the ultraviolet ray detector of Fig. 1, only the other portions will be specifically described.

The ultraviolet ray detector 1002 shown in Fig. 11 includes a substrate 100, an optical filter unit 200 formed on the substrate 100, a wavelength modulation unit 310 formed on the optical filter unit 200, And a photoelectric conversion unit 400 that receives light from the light source unit 310.

The wavelength modulating unit 300 of FIG. 1 is made of a material that absorbs ultraviolet rays and emits visible light, but the wavelength modulating unit of FIG. 3 may be mixed with a polymer or a metal oxide containing a wavelength modulating material. The wavelength modulating material may be contained in a proportion of 0.01 wt% to 33 wt% of the polymer or metal oxide. The wavelength modulating material may be a quantum dot, a fluorescent material, or a phosphorescent material constituting the wavelength modulating unit of FIG.

The polymer may be selected from the group consisting of silicone base, siloxane polymer, sol-gel hybrid base, epoxy polymer, silicone-epoxy hybrid or silicone-epoxy hybrid, (PMMA), polyethyleneterephthalate (PET), polyethersulfone (PES), polycarbonate (PC), polyethylenenaphthalate (PEN), polyimide Polypropylene (PP), polypropylene (PP), polypropylene (PP), polypropylene (PP), polystyrene Wherein the metal oxide is selected from the group consisting of ZnO, TiO _x , ZrO _x , VO _x , InO, SnO, HfO _x , WO _x , Al _x O _{y, and} so on.

11, when a wavelength modulating material is mixed with a polymer or a metal oxide to form a wavelength modulating portion, a wavelength modulating portion 310 having a flat upper surface can be formed. Due to a matrix made of a polymer or a metal oxide, Since the modulating material is protected from the external environment, the chemical stability is improved and the wavelength modulating unit 310 can be easily formed by the solution process.

Since most of the ultraviolet ray detector 1004 in Fig. 12 is the same as the ultraviolet ray detector in Fig. 1, only the other portions will be specifically described.

12 includes a substrate 100, an optical filter unit 200 formed on the substrate 100, a light transmittance adjusting unit 305 formed on the optical filter unit 200, And a photoelectric conversion unit 400 receiving light from the wavelength modulation unit 300 and the wavelength modulation unit 300 formed on the transmittance adjustment unit 305.

The light transmittance adjusting unit 305 adjusts the amount of light transmitted to the wavelength modulating unit 300 by matching the refractive index between the substrate 100 and the wavelength modulating unit 300 located above and below the optical filter unit 200 .

That is, the amount of light transmitted to the wavelength modulation unit 300 may vary due to the difference in refractive index between the substrate 100 and the wavelength modulation unit 300 in the light transmission amount adjustment unit 305 of FIG. Therefore, the amount of light transmitted to the wavelength modulating unit 300 can be increased or decreased by adjusting the difference in refractive index by forming the light transmittance adjusting unit 305.

When the amount of light transmitted to the wavelength modulating unit 300 is too small, the amount of the generated current is small, so quantitative analysis may not be easy. The amount of light transmitted through the substrate 100 and the optical filter unit 200 and transmitted to the wavelength modulating unit 300 can be increased, The ultraviolet ray can be easily detected from the light amount.

Conversely, when the amount of light transmitted to the wavelength modulating unit 300 is too large, the amount of light transmitted to the wavelength modulating unit 300 can be reduced using the light transmittance adjusting unit 305.

Light transmission control unit 305, the thickness may be formed to a thickness of 1nm to 300nm, a silicon oxide (SiO2), silicon nitride _{(Si 3 N 4), TiN} , ZnO, ZrO 2, PC (polycarbonate), PET ( polyethylene terephthalate, PMMA (poly (methyl methacrylate)), and PDMS (poly (dimethylsiloxane)).

13 is a perspective view schematically showing an ultraviolet detector according to another embodiment of the present invention.

As shown in Fig. 13, the ultraviolet ray detector according to the present invention may include a plurality of detection units.

Each of the detection units may be the ultraviolet detector shown in Fig. 1 or Fig.

As shown in FIG. 13, the plurality of unit detectors 1006 may be arranged in rows and columns and electrically connected in parallel. The plurality of unit detectors 1006 may be arranged in various shapes such as a linear shape, a triangular shape, a polygonal shape such as a rectangle, or a circular shape.

As described above, when the unit detectors 1006 are connected in parallel, ultraviolet rays of various wavelengths can be selectively detected, and the amount of light can be measured quantitatively. At this time, the size of the nanoholes formed in the unit detector is different, and the wavelength range incident on the unit detector is 100 nm to 450 nm, and the wavelength separation resolution capable of selectively transmitting the wavelength according to the size design of the nanohole is 1 nm to 150 nm . The resolution means that the resolution can be selected in units of 1 nm using the width, period, thickness, and arrangement of the nanoholes to be formed.

Light is simultaneously incident on the plurality of ultraviolet detectors of Fig. 13, and ultraviolet rays of different wavelengths are emitted according to the size of the nanohole of the optical filter unit of each unit detector. The ultraviolet ray passing through the optical filter section is converted into visible light while passing through the wavelength modulation section. At this time, the intensity and wavelength of the ultraviolet light incident on the wavelength modulation part are different, and thus the intensity and wavelength of visible light are also varied.

Thereafter, the converted visible light is incident on the photoelectric conversion unit, and a current is generated by the visible light incident on the photoelectric conversion unit. Accordingly, various currents according to the intensity of visible light can be obtained by measuring the visible light.

14 is a graph showing currents according to wavelengths measured from the ultraviolet detector of FIG.

Referring to FIG. 14, it can be seen that the amount of light can be measured by separating each UV light for each wavelength. That is, when four detection units are included in an ultraviolet detector including a plurality of detection units as shown in Fig. 14, wavelengths of 245 nm, 265 nm, 292 nm and 312 nm, respectively, can be detected. At this time, each detection unit has different nanoholes and periods, and is designed to match the wavelength to be detected. Therefore, it can be seen that the designed wavelength is separated according to the nanohole and the period, the amount of light is changed according to the separated wavelength, and the current value is also different therefrom.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, Of course.

100: substrate 200: optical filter unit
300, 310: wavelength modulation unit 305: light transmission amount control unit
400: photoelectric conversion section
1000, 1002, 1004: ultraviolet meter

Claims

An optical filter unit for selecting and outputting a specific wavelength of incident light,
A wavelength conversion unit that converts the ultraviolet rays that have passed through the optical filter unit to visible light,
A photoelectric conversion unit for measuring the light quantity of the visible light, and
A light transmission amount adjusting unit positioned between the optical filter unit and the wavelength conversion unit,
Lt; / RTI >
Wherein the optical filter unit comprises a metal layer having a plurality of nano holes,
Wherein the light transmittance adjusting unit changes the amount of light transmitted to the wavelength converting unit by adjusting a refractive index difference.

delete

The method of claim 1,
The light transmission control unit of silicon oxide (SiO2), silicon nitride _{(Si 3 N 4), TiN} , ZnO, ZrO 2, PC (polycarbonate), PET (polyethylene terephthalate), PMMA (poly (methyl methacrylate)) and a PDMS (Poly (dimethylsiloxane). < / RTI >

The method of claim 1,
Wherein the wavelength converter includes a quantum dot, a fluorescent material, or a phosphorescent material.

5. The method of claim 4,
Wherein the wavelength converter further comprises a polymer material or an oxide.

The method of claim 5,
Wherein the quantum dot or the fluorescent material is contained in an amount of 0.01 wt% to 33 wt% of the polymer material or the oxide.

The method of claim 1,
Wherein the photoelectric conversion unit is any one of a photovoltaic cell, a photodiode, a CCD, and a CMOS.

The method of claim 1,
And the width of the nano holes is 20 nm to 200 nm.

9. The method of claim 8,
Wherein the optical filter portion has a thickness of 1 m to 200 nm.

9. The method of claim 8,
Wherein the period of the nano holes is 40 nm to 500 nm.

The method of claim 1,
Wherein the planar shape of the nano hole is circular or polygonal.

In an ultraviolet detector including a plurality of ultraviolet ray detecting units,
The ultraviolet ray detecting unit includes:
An optical filter unit including a metal layer having a plurality of nano holes for selecting and outputting a specific wavelength of incident light,
A wavelength converter for passing ultraviolet light of a selected wavelength through the optical filter unit into visible light,
A photoelectric conversion unit for measuring the light quantity of the visible light, and
A light transmission amount control unit which is located between the optical filter unit and the wavelength conversion unit and adjusts a refractive index difference to change an amount of light transmitted to the wavelength conversion unit;
Lt; / RTI >
The widths of the nano holes of the neighboring ultraviolet detecting units are different from each other Ultraviolet detector.

delete

The method of claim 12,
Wherein a period of the nanoholes of the ultraviolet ray detecting unit adjacent to the ultraviolet ray detecting unit is different from that of the ultraviolet ray detecting unit.

The method of claim 14,
Wherein the period of the nano holes is different from 40 nm to 500 nm.

The method of claim 12,
And the width of the nano holes is 20 nm to 200 nm.

The method of claim 12,
Wherein the optical filter portion has a thickness of 1 nm to 200 nm.

The method of claim 12,
Wherein the wavelength converter includes a quantum dot or a fluorescent material.

The method of claim 18,
Wherein the wavelength converter further comprises a polymer material or an oxide.

20. The method of claim 19,
Wherein the quantum dot or the fluorescent material is contained in an amount of 0.01 wt% to 33 wt% of the polymer material or the oxide.

The method of claim 12,
Wherein the photoelectric conversion unit is any one of a photovoltaic cell, a photodiode, a CCD, and a CMOS.

The method of claim 12,
Wherein the planar shape of the nano hole is circular or polygonal.