CN102280515A - n-type doped ZnS quasi one-dimensional nano structure film photoconduction type ultraviolet detector and preparation method thereof - Google Patents

n-type doped ZnS quasi one-dimensional nano structure film photoconduction type ultraviolet detector and preparation method thereof Download PDF

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CN102280515A
CN102280515A CN2011101762367A CN201110176236A CN102280515A CN 102280515 A CN102280515 A CN 102280515A CN 2011101762367 A CN2011101762367 A CN 2011101762367A CN 201110176236 A CN201110176236 A CN 201110176236A CN 102280515 A CN102280515 A CN 102280515A
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quasi
doped zns
type doped
zns
ultraviolet detector
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于永强
揭建胜
蒋阳
朱志峰
江鹏
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Hefei University of Technology
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Hefei University of Technology
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Abstract

The invention discloses an n-type doped ZnS quasi one-dimensional nano structure film photoconduction type ultraviolet detector and a preparation method thereof. The n-type doped ZnS quasi one-dimensional nano structure film photoconduction type ultraviolet detector is characterized in that the ultraviolet detector is formed by overlaying an interdigital electrode, an n-type doped ZnS quasi one-dimensional nano structure film and an isolated substrate. The n-type doped ZnS quasi one-dimensional nano structure film is an ultraviolet sensitive layer which is only sensitive to light with the wavelength less than 335nm; a photic area is enhanced by the transparent interdigital electrode and the nano structure film; the ultraviolet response degree is improved; and meanwhile, ZnS serves as photosensing material which is environmentally-friendly and reliable. The n-type doped ZnS quasi one-dimensional nano structure film photoconduction type ultraviolet detector has the advantages of simple structure, high sensitivity and low cost and is easy to realize.

Description

N type doped ZnS quasi-one dimensional nanostructure film light conductivity type ultraviolet detector and preparation method
Technical field
The invention belongs to technical field of semiconductor device, be specifically related to n type doped ZnS quasi-one dimensional nanostructure photoconduction type ultraviolet detector and preparation method.
Background technology
Ultraviolet detector is widely used in astronomy, combustion enginnering, water purified treatment, flame detecting, biological effect, horizon communication and environmental pollution detection etc.Zinc sulphide ZnS is one of most important II-VI family direct gap semiconductor, energy gap is 3.7eV, have piezoelectricity, infrared transparent and good luminous property, be the material that is subjected to broad research always, in various fields such as electron display device, ultraviolet detector, solar cell, infrared window and laser and catalysis, be widely used.Because the ZnS energy gap in ultraviolet range, is one of ideal material of making by the ultraviolet detection device.Compare with the body material with traditional Z nS film, the ZnS nano material has good characteristics such as high-crystal quality, small size, bigger serface, high-quantum efficiency and quantum size effect, can be applicable to construct high performance nanometer ultraviolet detector.The current formation mechanism that mainly concentrates on the synthetic of various nanostructures and research zinc sulphide materials for research and the report of ZnS, and less to the research in electronic transport characteristic and photovoltaic applications of one dimension ZnS nanometer.About ZnS quasi-one-dimensional nanometer material UV detection study and few, the relevant report that has retrieved has Fang etc. to study intrinsic ZnS nano belt photoconduction type UV detector [X.S.Fang, Y.S.Bando, M.Y.Liao, U.K.Gautam, C.Y.Zhi, B.Dierre, B.D.Liu, T.Y.Zhai, T.Sekiguchi, Y.Koide, D.Golberg, Adv.Mater.2009,21,2034.X.S.Fang, Y.Bando, M.Y.Liao, T.Y.Zhai, U.K.Gautam, L.Li, Y.Koide, D.Golberg, Adv.Funct.Mater.2010,20,500.], but the low-response speed of this type of UV detector and little responsiveness make it be difficult to really be applied.
Summary of the invention
The present invention is for avoiding above-mentioned existing in prior technology weak point, a kind of n type doped ZnS quasi-one dimensional nanostructure film light conductivity type ultraviolet detector and preparation method are provided, and in the hope of realizing the ultraviolet detection of wavelength less than 335nm, responsiveness is up to 10 6AW -1, and can be prepared into the bright ultraviolet detector of full impregnated.
The present invention realizes in the following way:
The design feature of n type doped ZnS quasi-one dimensional nanostructure film light conductivity type ultraviolet detector of the present invention be described ultraviolet detector from top to bottom successively by interdigital electrode, n type doped ZnS quasi-one dimensional nanostructure film and dielectric substrate are repeatedly put and are formed.
The design feature of n type doped ZnS quasi-one dimensional nanostructure film light conductivity type ultraviolet detector of the present invention also is:
Described interdigital electrode is ITO electrode or AZO electrode.
The width of described interdigital electrode is 10 μ m-100 μ m, and thickness is 50nm-200nm, and the spacing between the interdigital electrode adjacent electrode is 5 μ m-100 μ m.
N type doped ZnS in the described n type doped ZnS quasi-one dimensional nanostructure film is meant Cl, Al, Ga or In doped ZnS.
Described dielectric substrate is quartz glass or the silicon chip that silica is arranged for the surface is long or is the surperficial silicon chip that is coated with silicon nitride.
The preparation method's of n type doped ZnS quasi-one dimensional nanostructure film light conductivity type ultraviolet detector of the present invention characteristics are to carry out as follows:
A, be dispersion liquid, n type doped ZnS quasi-one-dimensional nanometer material added in the dispersion liquid that ultrasonic concussion makes n type doped ZnS quasi-one-dimensional nanometer material evenly be suspended in the dispersion liquid with alcohol or acetone volatile solvent;
B, the dispersion liquid that will contain n type doped ZnS quasi-one-dimensional nanometer material are spin-coated on the dielectric substrate, form the ZnS nano structure membrane through volatilization;
C, utilize photoetching method on the substrate that scribbles the ZnS nano structure membrane, to make the figure of interdigital electrode by lithography;
D, on the figure of interdigital electrode, prepare the formation interdigital electrode by magnetron sputtering or pulse laser sediment method.
Compared with the prior art, beneficial effect of the present invention is embodied in:
1, ultraviolet detector of the present invention is the ultraviolet sensitivity layer with n type doped ZnS quasi-one dimensional nanostructure film, only to less than 335nm wavelength light sensitivity, that is to say that detector of the present invention only has response to ultraviolet light, to not response of visible light, thereby eliminated existence, and be difficult to differentiate and influence that ultraviolet detection is caused because of visible light;
2, the present invention utilizes AZO or the transparent interdigital electrode of ITO and nano structure membrane more to strengthen light-receiving area, has improved the ultraviolet light response degree, uses ZnS as light-sensitive material simultaneously, and environmental protection is reliable.
3, the present invention is simple in structure, and is highly sensitive, and cost is low, is easy to advantages such as realization.
Description of drawings
Fig. 1 is the structural representation of n type doped ZnS quasi-one dimensional nanostructure film light conductivity type ultraviolet detector;
Fig. 2 is a Cl doped ZnS nano wire film photoconduction type ultraviolet detector spectral response curve among the embodiment 1;
Fig. 3 is the response return curve of Cl doped ZnS nano wire film photoconduction type ultraviolet detector among the embodiment 1;
Fig. 4 is a gain curve under the different frequency of Cl doped ZnS nano wire film photoconduction type ultraviolet detector among the embodiment 1;
Fig. 5 is the response return curve of Ga doped ZnS nano belt film light conductivity type ultraviolet detector among the embodiment 2;
Fig. 6 is the response return curve of Al doped ZnS nano wire film photoconduction type ultraviolet detector among the embodiment 3;
Fig. 7 is the response return curve of In doped ZnS nano wire film photoconduction type ultraviolet detector among the embodiment 4;
Embodiment
As shown in Figure 1, n type doped ZnS quasi-one dimensional nanostructure film light conductivity type ultraviolet detector is repeatedly put by interdigital electrode 1, n type doped ZnS quasi-one dimensional nanostructure film 2 and dielectric substrate 3 successively from top to bottom and is formed in the present embodiment.The width of interdigital electrode 1 is that 10 μ m-100 μ m, thickness are 50nm-200nm, and the spacing between interdigital electrode 1 adjacent electrode is 5 μ m-100 μ m.
Embodiment 1
The preparation method and the step of Cl doped ZnS nano wire film photoconduction type ultraviolet detector are as follows:
1, surface length is had thickness be the silicon chip ultrasonic cleaning of 300nm silica clean after, as dispersion liquid, the doping content that chemical gas-phase method is synthetic is 2.6 * 10 with alcohol 16Cm -3Cl doped ZnS nano wire, add dispersion liquid, ultrasonic concussion evenly is suspended in the dispersion liquid nano wire.
2, the dispersion liquid that will contain the ZnS nano belt is spin-coated on clean length has on the silicon chip of silica, forms ZnS nano belt film through volatilization.
3, spin coating photoresist on the silicon chip that scribbles the ZnS nano wire film makes interdigital electrode 2 figures by lithography, and interdigital electrode adjacent electrode spacing is 5 μ m, and width is 10 μ m.
4, prepare one deck AZO electrode by magnetron sputtering method on the figure of the interdigital electrode of photoetching, thickness is 50nm.
5, be light source with the 150W xenon lamp, utilize Omni-λ 300 monochromators 100 μ W/cm 2Monochromatic light focuses on the Cl doped ZnS nano wire film, utilize KEITHLEY 4200-SCS measure different wave length illumination next to the voltage-current characteristic between interdigital electrode, and to getting its spectral response curve after its normalization, as shown in Figure 2, therefrom as can be seen: the ZnS nano wire film only has higher sensitiveness to wavelength less than the light of 335nm.
6, adopt the voltage of 1V, 100 μ W/cm 2The optical tests Cl doped ZnS nano wire response return curve of 320nm, as shown in Figure 3, the responsiveness of calculating is 1.0 * 10 5AW -1Fig. 4 is the following relative gain curve that obtained of different pulsed light frequencies under the above-mentioned light intensity, finds that the pulsed light frequency also can obtain bigger gain under 100Hz.
Embodiment 2
The preparation method and the step of Ga doped ZnS nano belt film light conductivity type ultraviolet detector are as follows:
1, with after the quartz glass ultrasonic cleaning totally, as dispersion liquid, the doping content that chemical gaseous phase is synthetic is 1.5 * 10 with acetone 17Cm -3Ga doped ZnS nano belt add dispersion liquid, ultrasonic concussion evenly is suspended in the dispersion liquid nano belt.
2, will contain on the clean quartz glass of dispersion liquid spin coating of ZnS nano belt, form ZnS nano belt film through volatilization;
3, scribbling spin coating photoresist on the membrane quartz glass of ZnS nanometer, make the interdigital electrode figure by lithography, interdigital electrode adjacent electrode spacing is 10 μ m, and width is 100 μ m;
4, prepare one deck ITO electrode by pulsed laser deposition on the electrode of photoetching, thickness is 200nm;
5, adopt the voltage of 1V, 100 μ W/cm 2The optical tests Ga doped ZnS nano belt response return curve of 320nm, as shown in Figure 5, the responsiveness of calculating is 1.0 * 10 6AW -1
Embodiment 3
The preparation method and the step of Al doped ZnS nano wire film photoconduction type ultraviolet detector are as follows:
1, the surface is coated with thickness be the silicon chip ultrasonic cleaning of 50nm silicon nitride clean after, as dispersion liquid, the doping content that chemical gaseous phase is synthetic is 3.8 * 10 with alcohol 17Cm -3Al doped ZnS nano wire add dispersion liquid, ultrasonic concussion makes nano wire evenly be suspended in the dispersion liquid;
2, the dispersion liquid that will contain the ZnS nano wire is spin-coated on the silicon chip that totally is coated with silicon nitride, forms the ZnS nano wire film through volatilization;
3, spin coating photoresist on the silicon chip that scribbles the ZnS nano wire film makes the interdigital electrode figure by lithography, and interdigital electrode adjacent electrode spacing is 50 μ m, and width is 50 μ m;
4, prepare one deck AZO electrode by pulsed laser deposition on the electrode of photoetching, thickness is 100nm;
5, adopt the voltage of 1V, 100 μ W/cm 2The optical tests of 320nm Al doped ZnS nano wire response return curve, as shown in Figure 6, the responsiveness of calculating is 2.0 * 10 5AW -1
Embodiment 4
The preparation method and the step of In doped ZnS nano wire film photoconduction type ultraviolet detector are as follows:
1, with after the quartz glass ultrasonic cleaning totally, as dispersion liquid, the doping content that chemical gaseous phase is synthetic is 5 * 10 with acetone 17Cm -3In doped ZnS nano wire add dispersion liquid, ultrasonic concussion makes nano wire evenly be suspended in the dispersion liquid;
2, will contain on the clean quartz glass of dispersion liquid spin coating of ZnS nano wire, form ZnS nano belt film through volatilization;
3, spin coating photoresist on the quartz glass that scribbles the ZnS nano wire film makes the interdigital electrode figure by lithography, and the interdigital electrode spacing is 20 μ m, and width is 50 μ m;
4, prepare one deck AZO electrode by radio frequency magnetron sputtering method on the electrode of photoetching, thickness is 100nm;
5, adopt the voltage of 1V, 100 μ W/cm 2The optical tests of 320nm In doped ZnS nano belt response return curve, as shown in Figure 7, the responsiveness of calculating is 2.0 * 10 6AW -1

Claims (6)

1. a n type doped ZnS quasi-one dimensional nanostructure film light conductivity type ultraviolet detector is characterized in that described ultraviolet detector from top to bottom successively by interdigital electrode (1), and n type doped ZnS quasi-one dimensional nanostructure film (2) and dielectric substrate (3) are repeatedly put and formed.
2. n type doped ZnS quasi-one dimensional nanostructure film light conductivity type ultraviolet detector according to claim 1 is characterized in that described interdigital electrode (1) is ITO electrode or AZO electrode.
3. n type doped ZnS quasi-one dimensional nanostructure film light conductivity type ultraviolet detector according to claim 1 and 2, the width of the described interdigital electrode of its feature (1) is 10 μ m-100 μ m, thickness is 50nm-200nm, and the spacing between interdigital electrode (1) adjacent electrode is 5 μ m-100 μ m.
4. n type doped ZnS quasi-one dimensional nanostructure film light conductivity type ultraviolet detector according to claim 1 is characterized in that the n type doped ZnS in the described n type doped ZnS quasi-one dimensional nanostructure film (2) is meant Cl, Al, Ga or In doped ZnS.
5. n type doped ZnS quasi-one dimensional nanostructure film light conductivity type ultraviolet detector according to claim 1 is characterized in that described dielectric substrate (3) is quartz glass or the silicon chip that silica is arranged for the surface is long or is the surperficial silicon chip that is coated with silicon nitride.
6. the preparation method of the described n type of claim 1 a doped ZnS quasi-one dimensional nanostructure film light conductivity type ultraviolet detector is characterized in that carrying out as follows:
A, be dispersion liquid, n type doped ZnS quasi-one-dimensional nanometer material added in the dispersion liquid that ultrasonic concussion makes n type doped ZnS quasi-one-dimensional nanometer material evenly be suspended in the dispersion liquid with alcohol or acetone volatile solvent;
B, the dispersion liquid that will contain n type doped ZnS quasi-one-dimensional nanometer material are spin-coated on the dielectric substrate (3), form ZnS nano structure membrane (2) through volatilization;
C, utilize photoetching method on the substrate that scribbles ZnS nano structure membrane (2), to make the figure of interdigital electrode (1) by lithography;
D, on the figure of interdigital electrode (1), prepare formation interdigital electrode (1) by magnetron sputtering or pulse laser sediment method.
CN2011101762367A 2011-06-28 2011-06-28 n-type doped ZnS quasi one-dimensional nano structure film photoconduction type ultraviolet detector and preparation method thereof Pending CN102280515A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104332513A (en) * 2014-10-22 2015-02-04 中国石油大学(北京) NiO nanowire ultraviolet light detector and preparation method and application thereof
CN108649082A (en) * 2018-04-18 2018-10-12 南京信息工程大学 A kind of ZnS carbon quantum dots solar blind ultraviolet detector and preparation method thereof
CN113632242A (en) * 2019-03-15 2021-11-09 特里纳米克斯股份有限公司 Optical sensor, method for selecting an optical sensor and detector for optical detection

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6362483B1 (en) * 1998-12-29 2002-03-26 The Hong Kong University Of Science & Technology Visible-blind UV detectors
CN101005103A (en) * 2006-01-20 2007-07-25 中国科学院物理研究所 Ultraviolet light detector of sunlight bind and its preparing method
CN201060051Y (en) * 2007-04-30 2008-05-14 西安交通大学 Ultraviolet light conductance seeker of ZnO MSM structure
CN101237009A (en) * 2008-02-29 2008-08-06 上海大学 Making method for ultraviolet detector with common plane grid structure
CN101887925A (en) * 2010-06-21 2010-11-17 中国科学院苏州纳米技术与纳米仿生研究所 Ultraviolet probe based on magnesium-zinc oxide film and preparation method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6362483B1 (en) * 1998-12-29 2002-03-26 The Hong Kong University Of Science & Technology Visible-blind UV detectors
CN101005103A (en) * 2006-01-20 2007-07-25 中国科学院物理研究所 Ultraviolet light detector of sunlight bind and its preparing method
CN201060051Y (en) * 2007-04-30 2008-05-14 西安交通大学 Ultraviolet light conductance seeker of ZnO MSM structure
CN101237009A (en) * 2008-02-29 2008-08-06 上海大学 Making method for ultraviolet detector with common plane grid structure
CN101887925A (en) * 2010-06-21 2010-11-17 中国科学院苏州纳米技术与纳米仿生研究所 Ultraviolet probe based on magnesium-zinc oxide film and preparation method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104332513A (en) * 2014-10-22 2015-02-04 中国石油大学(北京) NiO nanowire ultraviolet light detector and preparation method and application thereof
CN104332513B (en) * 2014-10-22 2016-11-02 中国石油大学(北京) A kind of NiO nanowire ultraviolet light detector and preparation method and application
CN108649082A (en) * 2018-04-18 2018-10-12 南京信息工程大学 A kind of ZnS carbon quantum dots solar blind ultraviolet detector and preparation method thereof
CN113632242A (en) * 2019-03-15 2021-11-09 特里纳米克斯股份有限公司 Optical sensor, method for selecting an optical sensor and detector for optical detection

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Application publication date: 20111214