BR8105277A - Comutador semicondutor de alta voltagem - Google Patents
Comutador semicondutor de alta voltagemInfo
- Publication number
- BR8105277A BR8105277A BR8105277A BR8105277A BR8105277A BR 8105277 A BR8105277 A BR 8105277A BR 8105277 A BR8105277 A BR 8105277A BR 8105277 A BR8105277 A BR 8105277A BR 8105277 A BR8105277 A BR 8105277A
- Authority
- BR
- Brazil
- Prior art keywords
- high voltage
- semiconductor switch
- voltage semiconductor
- switch
- voltage
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18129080A | 1980-08-25 | 1980-08-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
BR8105277A true BR8105277A (pt) | 1982-04-27 |
Family
ID=22663651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR8105277A BR8105277A (pt) | 1980-08-25 | 1981-08-18 | Comutador semicondutor de alta voltagem |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0047392B1 (pt) |
JP (1) | JPS5772365A (pt) |
AU (1) | AU547356B2 (pt) |
BR (1) | BR8105277A (pt) |
DE (1) | DE3175641D1 (pt) |
ES (1) | ES504914A0 (pt) |
NZ (1) | NZ198035A (pt) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3369431D1 (en) * | 1982-02-09 | 1987-02-26 | Western Electric Co | Field-effect controlled bi-directional lateral thyristor |
EP0111803B1 (en) * | 1982-12-13 | 1989-03-01 | General Electric Company | Lateral insulated-gate rectifier structures |
DE3470632D1 (en) * | 1983-02-03 | 1988-05-26 | Fairchild Camera Instr Co | High voltage mos/bipolar power transistor apparatus |
NL8302092A (nl) * | 1983-06-13 | 1985-01-02 | Philips Nv | Halfgeleiderinrichting bevattende een veldeffekttransistor. |
EP0367301A3 (en) * | 1984-06-22 | 1990-05-16 | Hitachi, Ltd. | Semiconductor switch circuit |
JP2590863B2 (ja) * | 1987-03-12 | 1997-03-12 | 日本電装株式会社 | 導電変調型mosfet |
JPS6459868A (en) * | 1987-08-29 | 1989-03-07 | Fuji Electric Co Ltd | Semiconductor device having insulating gate |
JPH01198076A (ja) * | 1988-02-02 | 1989-08-09 | Mitsubishi Electric Corp | 半導体装置 |
DE3838355A1 (de) * | 1988-11-11 | 1990-05-17 | Fraunhofer Ges Forschung | Vertikaltransistoranordnung |
JPH0716009B2 (ja) * | 1988-12-02 | 1995-02-22 | 株式会社日立製作所 | 横型絶縁ゲートバイポーラトランジスタ |
JPH02156678A (ja) * | 1988-12-09 | 1990-06-15 | Meidensha Corp | 電界効果トランジスタ及びその製造方法 |
US5072266A (en) | 1988-12-27 | 1991-12-10 | Siliconix Incorporated | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
EP1291924A1 (en) | 2001-09-10 | 2003-03-12 | STMicroelectronics S.r.l. | MOS semiconductor device having a body region |
JP2005057028A (ja) * | 2003-08-04 | 2005-03-03 | Sanken Electric Co Ltd | 絶縁ゲート型バイポーラトランジスタ |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2422258A1 (fr) * | 1978-01-19 | 1979-11-02 | Radiotechnique Compelec | Dispositif semiconducteur monolithique a transistors de types mos et bipolaire |
-
1981
- 1981-07-30 DE DE8181105991T patent/DE3175641D1/de not_active Expired
- 1981-07-30 EP EP19810105991 patent/EP0047392B1/de not_active Expired
- 1981-08-14 NZ NZ19803581A patent/NZ198035A/en unknown
- 1981-08-18 BR BR8105277A patent/BR8105277A/pt unknown
- 1981-08-19 AU AU74320/81A patent/AU547356B2/en not_active Expired - Fee Related
- 1981-08-24 ES ES504914A patent/ES504914A0/es active Granted
- 1981-08-25 JP JP56132229A patent/JPS5772365A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
NZ198035A (en) | 1986-04-11 |
AU547356B2 (en) | 1985-10-17 |
EP0047392A3 (en) | 1983-07-20 |
DE3175641D1 (en) | 1987-01-08 |
AU7432081A (en) | 1982-03-04 |
EP0047392A2 (de) | 1982-03-17 |
EP0047392B1 (de) | 1986-11-20 |
JPS5772365A (en) | 1982-05-06 |
ES8301391A1 (es) | 1982-12-01 |
ES504914A0 (es) | 1982-12-01 |
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