KR850005134A - 파워 트랜지스터(power transistor) - Google Patents

파워 트랜지스터(power transistor) Download PDF

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Publication number
KR850005134A
KR850005134A KR1019830006119A KR830006119A KR850005134A KR 850005134 A KR850005134 A KR 850005134A KR 1019830006119 A KR1019830006119 A KR 1019830006119A KR 830006119 A KR830006119 A KR 830006119A KR 850005134 A KR850005134 A KR 850005134A
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KR
South Korea
Prior art keywords
power transistor
emitter
region
interspersing
note
Prior art date
Application number
KR1019830006119A
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English (en)
Other versions
KR910009032B1 (ko
Inventor
마꼬도 도미다
Original Assignee
아라끼 쓰네오
간사이 닛뽄덴끼 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아라끼 쓰네오, 간사이 닛뽄덴끼 가부시기가이샤 filed Critical 아라끼 쓰네오
Priority to KR1019830006119A priority Critical patent/KR910009032B1/ko
Publication of KR850005134A publication Critical patent/KR850005134A/ko
Application granted granted Critical
Publication of KR910009032B1 publication Critical patent/KR910009032B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음

Description

파워 트랜지스터(POWER TRANSISTOR)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 파워트랜지스터를 표시하는 개략 단면도.
제2도는 본 발명의 실시예 1을 표시하는 파워트랜지스터의 요부 평면도.
제3도, 제4도 및 제5도는 제2도의 (X)-(X)선 (Y1)-(Y1)선 및 (Y2)-(Y2)선으로 절단한 단면도.
제6도는 소자의 개략 평면도.
* 도면의 주요부분에 대한 부호의 설명
11 : 베이스영역 12 : 에미터영역
13,13 : 비(非)에미터영역 17,17 : 에미터전극(電極)
18,18 : 베이스전극 20,20 : 베이스전극

Claims (1)

  1. 에미터전체 영역중에 베이스영역(11)과 접속된 다수의 포스트 형상의 비(非)에미터영역(13)(13)을 산재(散在)시키는 것을 특징으로 하는 파워트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019830006119A 1983-12-22 1983-12-22 파워 트랜지스터(power transistor) KR910009032B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019830006119A KR910009032B1 (ko) 1983-12-22 1983-12-22 파워 트랜지스터(power transistor)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019830006119A KR910009032B1 (ko) 1983-12-22 1983-12-22 파워 트랜지스터(power transistor)

Publications (2)

Publication Number Publication Date
KR850005134A true KR850005134A (ko) 1985-08-21
KR910009032B1 KR910009032B1 (ko) 1991-10-28

Family

ID=19230701

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830006119A KR910009032B1 (ko) 1983-12-22 1983-12-22 파워 트랜지스터(power transistor)

Country Status (1)

Country Link
KR (1) KR910009032B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100354905B1 (ko) * 1998-07-23 2003-06-12 삼성전자 주식회사 액정표시장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100354905B1 (ko) * 1998-07-23 2003-06-12 삼성전자 주식회사 액정표시장치

Also Published As

Publication number Publication date
KR910009032B1 (ko) 1991-10-28

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