IT8520640A0 - Circuito integrato bipolare comprendente transistori pnpverticali con collettore sul substrato. - Google Patents

Circuito integrato bipolare comprendente transistori pnpverticali con collettore sul substrato.

Info

Publication number
IT8520640A0
IT8520640A0 IT8520640A IT2064085A IT8520640A0 IT 8520640 A0 IT8520640 A0 IT 8520640A0 IT 8520640 A IT8520640 A IT 8520640A IT 2064085 A IT2064085 A IT 2064085A IT 8520640 A0 IT8520640 A0 IT 8520640A0
Authority
IT
Italy
Prior art keywords
pnpvertical
transistors
collector
substrate
integrated circuit
Prior art date
Application number
IT8520640A
Other languages
English (en)
Other versions
IT1218471B (it
Inventor
Ubaldo Mastromatteo
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT20640/85A priority Critical patent/IT1218471B/it
Publication of IT8520640A0 publication Critical patent/IT8520640A0/it
Priority to NL8601107A priority patent/NL8601107A/nl
Priority to SE8602088A priority patent/SE8602088L/
Priority to FR868606607A priority patent/FR2581796B1/fr
Priority to GB8611203A priority patent/GB2175138B/en
Priority to JP61105016A priority patent/JPS61260666A/ja
Application granted granted Critical
Publication of IT1218471B publication Critical patent/IT1218471B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H01L21/82285—Complementary vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
IT20640/85A 1985-05-09 1985-05-09 Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato IT1218471B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT20640/85A IT1218471B (it) 1985-05-09 1985-05-09 Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato
NL8601107A NL8601107A (nl) 1985-05-09 1986-04-29 Bipolair geintegreerde schakeling bevattende verticale p-n-p transistors met hun collectors op het substraat.
SE8602088A SE8602088L (sv) 1985-05-09 1986-05-07 Bipoler integrerad krets, innefattande vertikala pnp-transistorer, som har sina kollektorer pa substratet
FR868606607A FR2581796B1 (fr) 1985-05-09 1986-05-07 Circuit integre bipolaire comprenant des transistors pnp verticaux avec collecteur sur le substrat, et procede pour la realisation d'un tel circuit
GB8611203A GB2175138B (en) 1985-05-09 1986-05-08 Bipolar integrated circuits
JP61105016A JPS61260666A (ja) 1985-05-09 1986-05-09 バイポ−ラ集積回路およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT20640/85A IT1218471B (it) 1985-05-09 1985-05-09 Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato

Publications (2)

Publication Number Publication Date
IT8520640A0 true IT8520640A0 (it) 1985-05-09
IT1218471B IT1218471B (it) 1990-04-19

Family

ID=11169918

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20640/85A IT1218471B (it) 1985-05-09 1985-05-09 Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato

Country Status (6)

Country Link
JP (1) JPS61260666A (it)
FR (1) FR2581796B1 (it)
GB (1) GB2175138B (it)
IT (1) IT1218471B (it)
NL (1) NL8601107A (it)
SE (1) SE8602088L (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4951115A (en) * 1989-03-06 1990-08-21 International Business Machines Corp. Complementary transistor structure and method for manufacture
JP2835116B2 (ja) * 1989-09-29 1998-12-14 株式会社東芝 電力用ｉｃおよびその製造方法
EP0915508A1 (en) * 1997-10-10 1999-05-12 STMicroelectronics S.r.l. Integrated circuit with highly efficient junction insulation
DE19805786A1 (de) * 1998-02-12 1999-08-26 Siemens Ag Halbleiterbauelement mit Struktur zur Vermeidung von Querströmen
GB2367187B (en) * 2000-09-21 2002-11-13 Bookham Technology Plc An isolation device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648128A (en) * 1968-05-25 1972-03-07 Sony Corp An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions
JPS5942463B2 (ja) * 1972-09-22 1984-10-15 ソニー株式会社 半導体集積回路装置
JPS5914897B2 (ja) * 1975-02-08 1984-04-06 ソニー株式会社 半導体装置
JPS5710964A (en) * 1980-06-25 1982-01-20 Fujitsu Ltd Manufacture of semiconductor device
US4609413A (en) * 1983-11-18 1986-09-02 Motorola, Inc. Method for manufacturing and epitaxially isolated semiconductor utilizing etch and refill technique

Also Published As

Publication number Publication date
FR2581796A1 (fr) 1986-11-14
IT1218471B (it) 1990-04-19
GB2175138B (en) 1989-04-19
NL8601107A (nl) 1986-12-01
SE8602088D0 (sv) 1986-05-07
JPS61260666A (ja) 1986-11-18
GB8611203D0 (en) 1986-06-18
FR2581796B1 (fr) 1989-05-19
SE8602088L (sv) 1986-11-10
GB2175138A (en) 1986-11-19

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970530