SE8602088L - Bipoler integrerad krets, innefattande vertikala pnp-transistorer, som har sina kollektorer pa substratet - Google Patents

Bipoler integrerad krets, innefattande vertikala pnp-transistorer, som har sina kollektorer pa substratet

Info

Publication number
SE8602088L
SE8602088L SE8602088A SE8602088A SE8602088L SE 8602088 L SE8602088 L SE 8602088L SE 8602088 A SE8602088 A SE 8602088A SE 8602088 A SE8602088 A SE 8602088A SE 8602088 L SE8602088 L SE 8602088L
Authority
SE
Sweden
Prior art keywords
substrate
collectors
integrated circuit
bipoler
including vertical
Prior art date
Application number
SE8602088A
Other languages
English (en)
Swedish (sv)
Other versions
SE8602088D0 (sv
Inventor
U Mastromatteo
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Publication of SE8602088D0 publication Critical patent/SE8602088D0/xx
Publication of SE8602088L publication Critical patent/SE8602088L/

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H01L21/82285—Complementary vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
SE8602088A 1985-05-09 1986-05-07 Bipoler integrerad krets, innefattande vertikala pnp-transistorer, som har sina kollektorer pa substratet SE8602088L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT20640/85A IT1218471B (it) 1985-05-09 1985-05-09 Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato

Publications (2)

Publication Number Publication Date
SE8602088D0 SE8602088D0 (sv) 1986-05-07
SE8602088L true SE8602088L (sv) 1986-11-10

Family

ID=11169918

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8602088A SE8602088L (sv) 1985-05-09 1986-05-07 Bipoler integrerad krets, innefattande vertikala pnp-transistorer, som har sina kollektorer pa substratet

Country Status (6)

Country Link
JP (1) JPS61260666A ( )
FR (1) FR2581796B1 ( )
GB (1) GB2175138B ( )
IT (1) IT1218471B ( )
NL (1) NL8601107A ( )
SE (1) SE8602088L ( )

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4951115A (en) * 1989-03-06 1990-08-21 International Business Machines Corp. Complementary transistor structure and method for manufacture
JP2835116B2 (ja) * 1989-09-29 1998-12-14 株式会社東芝 電力用ｉｃおよびその製造方法
EP0915508A1 (en) * 1997-10-10 1999-05-12 STMicroelectronics S.r.l. Integrated circuit with highly efficient junction insulation
DE19805786A1 (de) 1998-02-12 1999-08-26 Siemens Ag Halbleiterbauelement mit Struktur zur Vermeidung von Querströmen
GB2367187B (en) * 2000-09-21 2002-11-13 Bookham Technology Plc An isolation device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648128A (en) * 1968-05-25 1972-03-07 Sony Corp An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions
JPS5942463B2 (ja) * 1972-09-22 1984-10-15 ソニー株式会社 半導体集積回路装置
JPS5914897B2 (ja) * 1975-02-08 1984-04-06 ソニー株式会社 半導体装置
JPS5710964A (en) * 1980-06-25 1982-01-20 Fujitsu Ltd Manufacture of semiconductor device
US4609413A (en) * 1983-11-18 1986-09-02 Motorola, Inc. Method for manufacturing and epitaxially isolated semiconductor utilizing etch and refill technique

Also Published As

Publication number Publication date
NL8601107A (nl) 1986-12-01
IT1218471B (it) 1990-04-19
FR2581796A1 (fr) 1986-11-14
GB2175138B (en) 1989-04-19
IT8520640A0 (it) 1985-05-09
JPS61260666A (ja) 1986-11-18
FR2581796B1 (fr) 1989-05-19
SE8602088D0 (sv) 1986-05-07
GB8611203D0 (en) 1986-06-18
GB2175138A (en) 1986-11-19

Similar Documents

Publication Publication Date Title
SE8700351L (sv) Monolitiskt integrerad halvledaranordning innehallande bipolera skikttransistorer, cmos- och dmos-transistorer samt lagleckagedioder och ett forfarande for framstellning av densamma
FR2691837B1 (fr) Dispositif semiconducteur sur substrat du type soi et son procédé de fabrication.
IT8820357A0 (it) Procedimento per la formazione di un circuito integrato su un substrato di tipo n, comprendente transistori pnp e npn verticali e isolati fra loro.
KR920005297A (ko) 반도체집적회로 장치
KR910010728A (ko) 복합형 직접회로소자
DE3786701D1 (de) Silizium-packungen fuer leistungshalbleiteranordnungen.
SE8602088D0 (sv) Bipoler integrerad krets, innefattande vertikala pnp-transistorer, som har sina kollektorer pa substratet
DE3785126D1 (de) Impatt-diode.
KR890013783A (ko) 복수콜렉터 수직반도체 장치 및 그의 제조방법
ES2030389T3 (es) Proceso de fabricacion de circuitos integrados para formar un transistor bipolar provisto de regiones de base extrinsecas.
GB1413371A (en) Integrated circuit
KR940012603A (ko) 개선된 바이폴라 트랜지스터
CA2046815A1 (en) Semiconductor integrating circuit
KR860001488A (ko) 바이폴러 트랜지스터와 iil이 있는 반도체 장치
KR850004355A (ko) 직열 접속 트랜지스터를 가진 반도체 집적회로
KR970054370A (ko) 수평구조 바이폴라 트랜지스터 및 그 제조방법
SE8304013D0 (sv) Multipel transistor
JPS57197835A (en) Semiconductor device
JPS57162361A (en) Manufacture of semiconductor integrated circuit
JPS56162540A (en) Logical circuit
JPS5263080A (en) Production of semiconductor integrated circuit device
GB1428742A (en) Semiconductor devices
KR940004838A (ko) 정전기특성이 개선된 반도체장치
JPH01171262A (ja) 半導体集積回路
JPS5552255A (en) Semiconductor memory

Legal Events

Date Code Title Description
NAV Patent application has lapsed

Ref document number: 8602088-0

Effective date: 19881201

Format of ref document f/p: F