KR900019220A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR900019220A
KR900019220A KR1019890007065A KR890007065A KR900019220A KR 900019220 A KR900019220 A KR 900019220A KR 1019890007065 A KR1019890007065 A KR 1019890007065A KR 890007065 A KR890007065 A KR 890007065A KR 900019220 A KR900019220 A KR 900019220A
Authority
KR
South Korea
Prior art keywords
conductive layers
semiconductor device
insulating film
conductive
propagate
Prior art date
Application number
KR1019890007065A
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English (en)
Other versions
KR920008420B1 (ko
Inventor
노보우 다고
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
다케다이 마사다카
도시바 마이크로 일렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바, 다케다이 마사다카, 도시바 마이크로 일렉트로닉스 가부시키가이샤 filed Critical 아오이 죠이치
Publication of KR900019220A publication Critical patent/KR900019220A/ko
Application granted granted Critical
Publication of KR920008420B1 publication Critical patent/KR920008420B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 반도체장치의 단면도, 제2도는 제1도에 도시된 반도체장치의 등가회로도, 제3도는 본 발명의 단른 실시예에 따른 반도체장치의 단면도.

Claims (1)

  1. 반도체기판(1, 11)상에 형성되어 아나로그신호 또는 디지털신호를 전파시키는 제1전도층(2, 12)과, 이 제1도전층(2, 12)의 윗쪽 또는 아랫쪽에 절연막(4, 14)을 매개로 서로 포개지게끔 형성되어 아나로그신호 전파시키는 제2도전층(3, 13), 상기 제1도전층(2, 12)과 상기 제2도전층(3, 13)간에 상기 절연막(4, 14)을 매개로 형성되어 전위를 고정시키는 제3도전층(5, 15)을 구비하여 구성된 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890007065A 1988-05-26 1989-05-26 반도체장치 KR920008420B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63-128780 1988-05-26
JP63128780A JPH01297839A (ja) 1988-05-26 1988-05-26 半導体装置

Publications (2)

Publication Number Publication Date
KR900019220A true KR900019220A (ko) 1990-12-24
KR920008420B1 KR920008420B1 (ko) 1992-09-28

Family

ID=14993278

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890007065A KR920008420B1 (ko) 1988-05-26 1989-05-26 반도체장치

Country Status (3)

Country Link
EP (1) EP0353414A3 (ko)
JP (1) JPH01297839A (ko)
KR (1) KR920008420B1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0473144A3 (en) * 1990-08-28 1992-04-15 Nec Corporation Semiconductor integrated circuit comprising interconnections
US5196920A (en) * 1992-04-21 1993-03-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device for limiting capacitive coupling between adjacent circuit blocks
US5663677A (en) * 1995-03-30 1997-09-02 Lucent Technologies Inc. Integrated circuit multi-level interconnection technique
EP0837503A3 (en) * 1996-10-16 1998-07-15 Digital Equipment Corporation Reference plane metallization on an integrated circuit
FR2768852B1 (fr) * 1997-09-22 1999-11-26 Sgs Thomson Microelectronics Realisation d'un condensateur intermetallique

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5339084A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Silicon gate mis semiconductor device
JPS584820B2 (ja) * 1977-04-20 1983-01-27 松下電器産業株式会社 半導体装置
EP0033130B1 (en) * 1980-01-25 1986-01-08 Kabushiki Kaisha Toshiba Semiconductor memory device
JPS5780828A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device
JPS5994849A (ja) * 1982-11-24 1984-05-31 Nec Corp 半導体集積回路装置
JPS60192359A (ja) * 1984-03-14 1985-09-30 Nec Corp 半導体メモリ装置
JPS60206161A (ja) * 1984-03-30 1985-10-17 Toshiba Corp 半導体集積回路

Also Published As

Publication number Publication date
JPH01297839A (ja) 1989-11-30
EP0353414A2 (en) 1990-02-07
EP0353414A3 (en) 1990-10-31
KR920008420B1 (ko) 1992-09-28

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