KR910017624A - 반도체집적회로장치 - Google Patents
반도체집적회로장치 Download PDFInfo
- Publication number
- KR910017624A KR910017624A KR1019910003524A KR910003524A KR910017624A KR 910017624 A KR910017624 A KR 910017624A KR 1019910003524 A KR1019910003524 A KR 1019910003524A KR 910003524 A KR910003524 A KR 910003524A KR 910017624 A KR910017624 A KR 910017624A
- Authority
- KR
- South Korea
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit device
- layer
- wiring
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01072—Hafnium [Hf]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명의 1실시예에 따른 2층 배선구조를 갖춘 반도체집적회로 장치에서의 바이폴라 트랜지스터부 및 전극패드부의 평면패턴을 도시해 놓은 도며, 제 2도는 제 1도중의 Ⅱ-Ⅱ선에 따른 단면구조를 도시해 놓은 도면.
Claims (1)
- 다층배선구조를 갖춘 반도체직접회로장치에 있어서, 외부전극접속용 전극패드(44)가 다층배선간절연막(42)상의 상부배선층에 의해 형성되어 있는 것을 특징으로 하는 반도체집적회로장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51672 | 1983-03-29 | ||
JP02-051672 | 1990-03-05 | ||
JP2051672A JPH03254137A (ja) | 1990-03-05 | 1990-03-05 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910017624A true KR910017624A (ko) | 1991-11-05 |
KR940004451B1 KR940004451B1 (ko) | 1994-05-25 |
Family
ID=12893373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910003524A KR940004451B1 (ko) | 1990-03-05 | 1991-03-05 | 반도체 집적회로장치 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0450320A1 (ko) |
JP (1) | JPH03254137A (ko) |
KR (1) | KR940004451B1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69321965T2 (de) * | 1993-12-24 | 1999-06-02 | Cons Ric Microelettronica | MOS-Leistungs-Chip-Typ und Packungszusammenbau |
DE69321966T2 (de) * | 1993-12-24 | 1999-06-02 | Cons Ric Microelettronica | Leistungs-Halbleiterbauelement |
US5798287A (en) * | 1993-12-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Method for forming a power MOS device chip |
US5661082A (en) * | 1995-01-20 | 1997-08-26 | Motorola, Inc. | Process for forming a semiconductor device having a bond pad |
US5606195A (en) * | 1995-12-26 | 1997-02-25 | Hughes Electronics | High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes |
JP2002543619A (ja) * | 1999-04-29 | 2002-12-17 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体装置とその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55156365A (en) * | 1979-05-24 | 1980-12-05 | Toshiba Corp | Semiconductor device |
JPS56150830A (en) * | 1980-04-25 | 1981-11-21 | Hitachi Ltd | Semiconductor device |
JPS5787145A (en) * | 1980-11-20 | 1982-05-31 | Seiko Epson Corp | Semiconductor device |
EP0260906B1 (en) * | 1986-09-17 | 1993-03-10 | Fujitsu Limited | Method of producing semiconductor device and semiconductor device |
JPH0193133A (ja) * | 1987-10-05 | 1989-04-12 | Nec Corp | 半導体装置の製造方法 |
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1990
- 1990-03-05 JP JP2051672A patent/JPH03254137A/ja active Pending
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1991
- 1991-03-04 EP EP91103236A patent/EP0450320A1/en not_active Withdrawn
- 1991-03-05 KR KR1019910003524A patent/KR940004451B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR940004451B1 (ko) | 1994-05-25 |
JPH03254137A (ja) | 1991-11-13 |
EP0450320A1 (en) | 1991-10-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
SUBM | Submission of document of abandonment before or after decision of registration |