KR910010688A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR910010688A
KR910010688A KR1019900017927A KR900017927A KR910010688A KR 910010688 A KR910010688 A KR 910010688A KR 1019900017927 A KR1019900017927 A KR 1019900017927A KR 900017927 A KR900017927 A KR 900017927A KR 910010688 A KR910010688 A KR 910010688A
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KR
South Korea
Prior art keywords
semiconductor device
connection holes
wiring lead
matching margin
semiconductor substrate
Prior art date
Application number
KR1019900017927A
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English (en)
Other versions
KR930010077B1 (ko
Inventor
마사히로 아베
야스카즈 마세
도미에 야마모토
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910010688A publication Critical patent/KR910010688A/ko
Application granted granted Critical
Publication of KR930010077B1 publication Critical patent/KR930010077B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 따른 반도체장치를 나타낸 평면패턴도.
제2도는 본 발명의 제2실시예에 따른 반도체장치를 나타낸 평면패턴도.

Claims (2)

  1. 반도체기판(21)과, 이 반도체기판상에 형성되는 배선의 접속공(22), 이 접속공상에 형성되고 또한 그 배선인출측에 있어서의 상기 접속공과의 정합여유가 패턴의정합 어긋남을 보상하기 위해 필요한 소정의 폭만큼 소정의 정합여유보다 넓게 설정된 배선층(23)을 구비하여 구성된 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 상기 배선인출측에 있어서의 상기 접속공과의 정합여유는 상기 배선인출측 이외에 있어서의 상기 접속공과의 정합 여유보다 넓게 설정되어 있는 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900017927A 1989-11-10 1990-11-07 반도체장치 KR930010077B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP293490 1989-11-10
JP1-293490 1989-11-10
JP1293490A JPH03154341A (ja) 1989-11-10 1989-11-10 半導体装置

Publications (2)

Publication Number Publication Date
KR910010688A true KR910010688A (ko) 1991-06-29
KR930010077B1 KR930010077B1 (ko) 1993-10-14

Family

ID=17795414

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900017927A KR930010077B1 (ko) 1989-11-10 1990-11-07 반도체장치

Country Status (5)

Country Link
US (4) US5126819A (ko)
EP (2) EP0702407B1 (ko)
JP (1) JPH03154341A (ko)
KR (1) KR930010077B1 (ko)
DE (2) DE69034215T2 (ko)

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* Cited by examiner, † Cited by third party
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DE3801331C2 (de) * 1988-01-19 1999-04-08 Gefinex Gmbh Zielscheibe zum Bogenschießen
JPH03154341A (ja) * 1989-11-10 1991-07-02 Toshiba Corp 半導体装置
EP0480580A3 (en) * 1990-09-10 1992-09-02 Canon Kabushiki Kaisha Electrode structure of semiconductor device and method for manufacturing the same
US5539156A (en) * 1994-11-16 1996-07-23 International Business Machines Corporation Non-annular lands
US5506450A (en) * 1995-05-04 1996-04-09 Motorola, Inc. Semiconductor device with improved electromigration resistance and method for making the same
KR100215847B1 (ko) * 1996-05-16 1999-08-16 구본준 반도체 장치의 금속 배선 및 그의 형성 방법
US6081035A (en) * 1996-10-24 2000-06-27 Tessera, Inc. Microelectronic bond ribbon design
DE19743264C2 (de) * 1997-09-30 2002-01-17 Infineon Technologies Ag Verfahren zur Herstellung einer Emulationsschaltkreisanordnung sowie Emulationsschaltkreisanordnung mit zwei integrierten Schaltkreisen
US6103623A (en) * 1998-10-05 2000-08-15 Vanguard International Semiconductor Corporation Method for fabricating a tungsten plug structure and an overlying interconnect metal structure without a tungsten etch back or CMP procedure
US7183653B2 (en) * 2003-12-17 2007-02-27 Intel Corporation Via including multiple electrical paths
US8089160B2 (en) * 2007-12-12 2012-01-03 International Business Machines Corporation IC interconnect for high current
JP5552261B2 (ja) * 2009-05-12 2014-07-16 パナソニック株式会社 半導体装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4196443A (en) * 1978-08-25 1980-04-01 Rca Corporation Buried contact configuration for CMOS/SOS integrated circuits
US4381215A (en) * 1980-05-27 1983-04-26 Burroughs Corporation Method of fabricating a misaligned, composite electrical contact on a semiconductor substrate
JPS57112027A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of semiconductor device
JPS57201171A (en) * 1981-06-02 1982-12-09 Meinan Mach Works Inc Polishing device
JPS5914649A (ja) * 1982-07-16 1984-01-25 Nec Corp 半導体装置
JPS59169150A (ja) * 1983-03-16 1984-09-25 Hitachi Ltd 多層配線構造
JPS60208845A (ja) * 1984-04-02 1985-10-21 Oki Electric Ind Co Ltd 半導体装置の配線形成法
JPS59188149A (ja) * 1984-04-02 1984-10-25 Hitachi Ltd 半導体装置
US4577212A (en) * 1984-06-29 1986-03-18 International Business Machines Corporation Structure for inhibiting forward bias beta degradation
JPS61131469A (ja) * 1984-11-29 1986-06-19 Fujitsu Ltd 半導体装置の製造方法
JPS61194848A (ja) * 1985-02-25 1986-08-29 Hitachi Ltd 半導体装置
JPS60242643A (ja) * 1985-03-22 1985-12-02 Hitachi Ltd 電子部品の配線
JPS6378554A (ja) * 1986-09-20 1988-04-08 Mitsubishi Electric Corp 半導体装置
US4812419A (en) * 1987-04-30 1989-03-14 Hewlett-Packard Company Via connection with thin resistivity layer
JPS63292672A (ja) * 1987-05-26 1988-11-29 Nec Corp 半導体装置
JPH01191914A (ja) * 1988-01-27 1989-08-02 Toshiba Corp コンピュータシステム
JPH01191195A (ja) * 1988-01-27 1989-08-01 Toshiba Corp 表示システム
JPH01305531A (ja) * 1988-06-03 1989-12-08 Nec Corp 改良されたボンディングパッドを有する半導体装置
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JPH03154341A (ja) * 1989-11-10 1991-07-02 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPH03154341A (ja) 1991-07-02
JPH0578172B2 (ko) 1993-10-28
USRE37059E1 (en) 2001-02-20
DE69034215T2 (de) 2006-09-21
EP0702407A3 (en) 1997-01-29
US5411916A (en) 1995-05-02
DE69033802D1 (de) 2001-10-25
EP0702407B1 (en) 2006-01-11
KR930010077B1 (ko) 1993-10-14
DE69033802T2 (de) 2002-04-04
EP0427226A3 (en) 1991-08-21
EP0702407A2 (en) 1996-03-20
US5523627A (en) 1996-06-04
US5126819A (en) 1992-06-30
EP0427226A2 (en) 1991-05-15
EP0427226B1 (en) 2001-09-19
DE69034215D1 (de) 2006-04-06

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