KR910013526A - 배선용 콘택홀 형성방법 - Google Patents
배선용 콘택홀 형성방법 Download PDFInfo
- Publication number
- KR910013526A KR910013526A KR1019890018821A KR890018821A KR910013526A KR 910013526 A KR910013526 A KR 910013526A KR 1019890018821 A KR1019890018821 A KR 1019890018821A KR 890018821 A KR890018821 A KR 890018821A KR 910013526 A KR910013526 A KR 910013526A
- Authority
- KR
- South Korea
- Prior art keywords
- wiring
- contact holes
- form contact
- contact hole
- forming
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 콘택 홀의 제조공정도이다.
Claims (1)
- 하부전극이 형성된 반도체 기판(1) 상의 절연막(3)에 콘택 홀(5)을 형성하여 상부전극(6)과 하부 전극(2)을 전기적으로 연결하는 콘택 홀 형성방법에 있어서, 상기 절연막(3)을 도포한 후, 1차로 포토레지스트막(41)을 고속으로 얇게 도포하고, 상기 포토레지스트막(41)상에 2차로 포토레지스트막(42)을 얇게 도포한 다음, 상기 절연막(3)을 에칭하여 콘택 홀(5)을 형성하는 것을 특징으로 하는 배선용 콘택 홀 형성방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890018821A KR920006186B1 (ko) | 1989-12-18 | 1989-12-18 | 배선용 콘택홀 형성방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890018821A KR920006186B1 (ko) | 1989-12-18 | 1989-12-18 | 배선용 콘택홀 형성방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR910013526A true KR910013526A (ko) | 1991-08-08 |
| KR920006186B1 KR920006186B1 (ko) | 1992-08-01 |
Family
ID=19293086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019890018821A KR920006186B1 (ko) | 1989-12-18 | 1989-12-18 | 배선용 콘택홀 형성방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR920006186B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100424190B1 (ko) * | 1998-12-29 | 2004-06-18 | 주식회사 하이닉스반도체 | 반도체소자의금속배선형성방법 |
-
1989
- 1989-12-18 KR KR1019890018821A patent/KR920006186B1/ko not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100424190B1 (ko) * | 1998-12-29 | 2004-06-18 | 주식회사 하이닉스반도체 | 반도체소자의금속배선형성방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR920006186B1 (ko) | 1992-08-01 |
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| A201 | Request for examination | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20000714 Year of fee payment: 9 |
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| LAPS | Lapse due to unpaid annual fee |