KR910001901A - 접촉창 형성 방법 - Google Patents
접촉창 형성 방법 Download PDFInfo
- Publication number
- KR910001901A KR910001901A KR1019890008127A KR890008127A KR910001901A KR 910001901 A KR910001901 A KR 910001901A KR 1019890008127 A KR1019890008127 A KR 1019890008127A KR 890008127 A KR890008127 A KR 890008127A KR 910001901 A KR910001901 A KR 910001901A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- film layer
- contact window
- etching
- insulating film
- Prior art date
Links
- 238000000034 method Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims 4
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 접촉장 형성 공정도.
제2도는 정렬 노광 오차발생시 본 발명의 방법에 의해 형성된 접촉장의 단면도.
Claims (1)
- 제1,2배선층 및 산화막층을 형성한 후 개구부 패턴을 형성하고, 산화막층을 식각하여 접촉창을 형성하며, 그위에 상부 도전층을 형성시키는 접촉창 형성 방법에 있어서, 상기 산화막층(3)의 상부에 제1절연막층(4)을 형성하는 공정과, 개구부 패턴으로 산화막층(3) 및 제1 절연막(4)을 식각하여 접촉장(5)을 형성하는 공정과, 접촉창(5)위에 제2절연막층(6)을 식각하여 접촉창(5)하부를 개방하고, 계속하여 제1절연막층(4)의 열부를 식각하는 공정과, 접촉창(6)의 상부에 제3배선층(7)을 형성하는 공정을 포함 하여 이루어지는 것을 특징으로 하는 접촉창 형성방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019890008127A KR920005390B1 (ko) | 1989-06-13 | 1989-06-13 | 접촉창 형성방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019890008127A KR920005390B1 (ko) | 1989-06-13 | 1989-06-13 | 접촉창 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910001901A true KR910001901A (ko) | 1991-01-31 |
KR920005390B1 KR920005390B1 (ko) | 1992-07-02 |
Family
ID=19287063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890008127A KR920005390B1 (ko) | 1989-06-13 | 1989-06-13 | 접촉창 형성방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR920005390B1 (ko) |
-
1989
- 1989-06-13 KR KR1019890008127A patent/KR920005390B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR920005390B1 (ko) | 1992-07-02 |
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FPAY | Annual fee payment |
Payment date: 20060630 Year of fee payment: 15 |
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LAPS | Lapse due to unpaid annual fee |