KR910001901A - 접촉창 형성 방법 - Google Patents

접촉창 형성 방법 Download PDF

Info

Publication number
KR910001901A
KR910001901A KR1019890008127A KR890008127A KR910001901A KR 910001901 A KR910001901 A KR 910001901A KR 1019890008127 A KR1019890008127 A KR 1019890008127A KR 890008127 A KR890008127 A KR 890008127A KR 910001901 A KR910001901 A KR 910001901A
Authority
KR
South Korea
Prior art keywords
forming
film layer
contact window
etching
insulating film
Prior art date
Application number
KR1019890008127A
Other languages
English (en)
Other versions
KR920005390B1 (ko
Inventor
안태현
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019890008127A priority Critical patent/KR920005390B1/ko
Publication of KR910001901A publication Critical patent/KR910001901A/ko
Application granted granted Critical
Publication of KR920005390B1 publication Critical patent/KR920005390B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

내용 없음

Description

접촉창 형성 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 접촉장 형성 공정도.
제2도는 정렬 노광 오차발생시 본 발명의 방법에 의해 형성된 접촉장의 단면도.

Claims (1)

  1. 제1,2배선층 및 산화막층을 형성한 후 개구부 패턴을 형성하고, 산화막층을 식각하여 접촉창을 형성하며, 그위에 상부 도전층을 형성시키는 접촉창 형성 방법에 있어서, 상기 산화막층(3)의 상부에 제1절연막층(4)을 형성하는 공정과, 개구부 패턴으로 산화막층(3) 및 제1 절연막(4)을 식각하여 접촉장(5)을 형성하는 공정과, 접촉창(5)위에 제2절연막층(6)을 식각하여 접촉창(5)하부를 개방하고, 계속하여 제1절연막층(4)의 열부를 식각하는 공정과, 접촉창(6)의 상부에 제3배선층(7)을 형성하는 공정을 포함 하여 이루어지는 것을 특징으로 하는 접촉창 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890008127A 1989-06-13 1989-06-13 접촉창 형성방법 KR920005390B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890008127A KR920005390B1 (ko) 1989-06-13 1989-06-13 접촉창 형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890008127A KR920005390B1 (ko) 1989-06-13 1989-06-13 접촉창 형성방법

Publications (2)

Publication Number Publication Date
KR910001901A true KR910001901A (ko) 1991-01-31
KR920005390B1 KR920005390B1 (ko) 1992-07-02

Family

ID=19287063

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890008127A KR920005390B1 (ko) 1989-06-13 1989-06-13 접촉창 형성방법

Country Status (1)

Country Link
KR (1) KR920005390B1 (ko)

Also Published As

Publication number Publication date
KR920005390B1 (ko) 1992-07-02

Similar Documents

Publication Publication Date Title
KR970030682A (ko) 반도체장치 및 그 제조방법
KR880013239A (ko) 반도체소자의 접속구멍형성 방법
KR920017258A (ko) 집적 회로 제조 방법
KR910003752A (ko) 반도체장치의 제조방법
KR920018851A (ko) 메탈플러그의 형성방법
KR920018850A (ko) 메탈플러그의 형성방법
KR950004472A (ko) 적층배선기판 및 그 제조방법
KR900013585A (ko) 반도체 소자의 제조방법
KR950001901A (ko) 콘택홀 제조방법
KR970072325A (ko) 반도체 장치 및 그 제조 방법
KR940022801A (ko) 반도체소자의 콘택 형성방법
KR910001901A (ko) 접촉창 형성 방법
KR870001655A (ko) 반도체장치의 제조방법
KR890011059A (ko) 반도체 장치의 제조방법
KR930002877A (ko) 단차가 없는 도전층 패턴 제조방법
KR910013461A (ko) 다층배선시 콘택트부 형성방법
KR910013526A (ko) 배선용 콘택홀 형성방법
KR930001396A (ko) 금속 배선 제조 방법
KR960026191A (ko) 반도체 소자의 금속배선 형성방법
KR900002432A (ko) 반도체의 사이드벽 형성방법
KR980006271A (ko) 앤티퓨즈 제조방법
KR900005578A (ko) 평탄화 식각을 이용한 다층 배선구조의 반도체장치의 제조방법
KR890001173A (ko) 반도체 장지의 제조방법
KR970052391A (ko) 반도체 장치의 콘택홀 형성 방법
KR950025874A (ko) 반도체소자의 게이트전극 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20060630

Year of fee payment: 15

LAPS Lapse due to unpaid annual fee