DE69321965T2 - MOS-Leistungs-Chip-Typ und Packungszusammenbau - Google Patents
MOS-Leistungs-Chip-Typ und PackungszusammenbauInfo
- Publication number
- DE69321965T2 DE69321965T2 DE1993621965 DE69321965T DE69321965T2 DE 69321965 T2 DE69321965 T2 DE 69321965T2 DE 1993621965 DE1993621965 DE 1993621965 DE 69321965 T DE69321965 T DE 69321965T DE 69321965 T2 DE69321965 T2 DE 69321965T2
- Authority
- DE
- Germany
- Prior art keywords
- package assembly
- chip type
- power chip
- mos power
- mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13034—Silicon Controlled Rectifier [SCR]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Die Bonding (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP19930830523 EP0660396B1 (de) | 1993-12-24 | 1993-12-24 | MOS-Leistungs-Chip-Typ und Packungszusammenbau |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69321965D1 DE69321965D1 (de) | 1998-12-10 |
DE69321965T2 true DE69321965T2 (de) | 1999-06-02 |
Family
ID=8215286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1993621965 Expired - Fee Related DE69321965T2 (de) | 1993-12-24 | 1993-12-24 | MOS-Leistungs-Chip-Typ und Packungszusammenbau |
Country Status (4)
Country | Link |
---|---|
US (1) | US5821616A (de) |
EP (1) | EP0660396B1 (de) |
JP (1) | JP2809998B2 (de) |
DE (1) | DE69321965T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2962136B2 (ja) * | 1994-03-16 | 1999-10-12 | 株式会社日立製作所 | 絶縁ゲート型半導体装置及びそれを用いた電力変換装置 |
US6693350B2 (en) | 1999-11-24 | 2004-02-17 | Denso Corporation | Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure |
US6703707B1 (en) | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
US7659577B2 (en) * | 2005-07-01 | 2010-02-09 | International Rectifier Corporation | Power semiconductor device with current sense capability |
Family Cites Families (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL136562C (de) * | 1963-10-24 | |||
GB1224335A (en) * | 1967-11-28 | 1971-03-10 | North American Rockwell | N-channel field effect transistor |
US3667008A (en) * | 1970-10-29 | 1972-05-30 | Rca Corp | Semiconductor device employing two-metal contact and polycrystalline isolation means |
US3831067A (en) * | 1972-05-15 | 1974-08-20 | Int Rectifier Corp | Semiconductor device with pressure connection electrodes and with headers cemented to insulation ring |
US4017886A (en) * | 1972-10-18 | 1977-04-12 | Hitachi, Ltd. | Discrete semiconductor device having polymer resin as insulator and method for making the same |
US4015278A (en) * | 1974-11-26 | 1977-03-29 | Fujitsu Ltd. | Field effect semiconductor device |
US4008486A (en) * | 1975-06-02 | 1977-02-15 | International Rectifier Corporation | Compression-assembled semiconductor device with nesting circular flanges and flexible locating ring |
US4070690A (en) * | 1976-08-17 | 1978-01-24 | Westinghouse Electric Corporation | VMOS transistor |
US4055884A (en) * | 1976-12-13 | 1977-11-01 | International Business Machines Corporation | Fabrication of power field effect transistors and the resulting structures |
US4236171A (en) * | 1978-07-17 | 1980-11-25 | International Rectifier Corporation | High power transistor having emitter pattern with symmetric lead connection pads |
DK157272C (da) * | 1978-10-13 | 1990-04-30 | Int Rectifier Corp | Mosfet med hoej effekt |
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
US4329642A (en) * | 1979-03-09 | 1982-05-11 | Siliconix, Incorporated | Carrier and test socket for leadless integrated circuit |
US5130767C1 (en) * | 1979-05-14 | 2001-08-14 | Int Rectifier Corp | Plural polygon source pattern for mosfet |
US4305087A (en) * | 1979-06-29 | 1981-12-08 | International Rectifier Corporation | Stud-mounted pressure assembled semiconductor device |
US4593302B1 (en) * | 1980-08-18 | 1998-02-03 | Int Rectifier Corp | Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide |
US4680853A (en) * | 1980-08-18 | 1987-07-21 | International Rectifier Corporation | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide |
US4412242A (en) * | 1980-11-17 | 1983-10-25 | International Rectifier Corporation | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions |
US4399449A (en) * | 1980-11-17 | 1983-08-16 | International Rectifier Corporation | Composite metal and polysilicon field plate structure for high voltage semiconductor devices |
US4414560A (en) * | 1980-11-17 | 1983-11-08 | International Rectifier Corporation | Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region |
US4642419A (en) * | 1981-04-06 | 1987-02-10 | International Rectifier Corporation | Four-leaded dual in-line package module for semiconductor devices |
FR2523745B1 (fr) * | 1982-03-18 | 1987-06-26 | Bull Sa | Procede et dispositif de protection d'un logiciel livre par un fournisseur a un utilisateur |
US4574208A (en) * | 1982-06-21 | 1986-03-04 | Eaton Corporation | Raised split gate EFET and circuitry |
FR2531572A1 (fr) * | 1982-08-09 | 1984-02-10 | Radiotechnique Compelec | Dispositif mos a structure plane multicellulaire |
US4641418A (en) * | 1982-08-30 | 1987-02-10 | International Rectifier Corporation | Molding process for semiconductor devices and lead frame structure therefor |
US4556896A (en) * | 1982-08-30 | 1985-12-03 | International Rectifier Corporation | Lead frame structure |
US4878099A (en) * | 1982-12-08 | 1989-10-31 | International Rectifier Corporation | Metallizing system for semiconductor wafers |
US4965173A (en) * | 1982-12-08 | 1990-10-23 | International Rectifier Corporation | Metallizing process and structure for semiconductor devices |
US4789882A (en) * | 1983-03-21 | 1988-12-06 | International Rectifier Corporation | High power MOSFET with direct connection from connection pads to underlying silicon |
US4639762A (en) * | 1984-04-30 | 1987-01-27 | Rca Corporation | MOSFET with reduced bipolar effects |
US4663820A (en) * | 1984-06-11 | 1987-05-12 | International Rectifier Corporation | Metallizing process for semiconductor devices |
US4606998A (en) * | 1985-04-30 | 1986-08-19 | International Business Machines Corporation | Barrierless high-temperature lift-off process |
US4723197A (en) * | 1985-12-16 | 1988-02-02 | National Semiconductor Corporation | Bonding pad interconnection structure |
US4853762A (en) * | 1986-03-27 | 1989-08-01 | International Rectifier Corporation | Semi-conductor modules |
US4794431A (en) * | 1986-04-21 | 1988-12-27 | International Rectifier Corporation | Package for photoactivated semiconductor device |
JPS6384067A (ja) * | 1986-09-27 | 1988-04-14 | Toshiba Corp | 半導体装置の製造方法 |
US4845545A (en) * | 1987-02-13 | 1989-07-04 | International Rectifier Corporation | Low profile semiconductor package |
FR2616966B1 (fr) * | 1987-06-22 | 1989-10-27 | Thomson Semiconducteurs | Structure de transistors mos de puissance |
JP2771172B2 (ja) * | 1988-04-01 | 1998-07-02 | 日本電気株式会社 | 縦型電界効果トランジスタ |
US4881106A (en) * | 1988-05-23 | 1989-11-14 | Ixys Corporation | DV/DT of power MOSFETS |
JPH0680818B2 (ja) * | 1989-10-02 | 1994-10-12 | 株式会社東芝 | 電力用圧接型半導体装置 |
DE69032084T2 (de) * | 1989-11-17 | 1998-07-16 | Toshiba Kawasaki Kk | Halbleiteranordnung mit zusammengesetzter Bipolar-MOS-Elementpille, geeignet für eine Druckkontaktstruktur |
JP2667027B2 (ja) * | 1989-12-28 | 1997-10-22 | 株式会社東芝 | 圧接型半導体装置 |
JPH03254137A (ja) * | 1990-03-05 | 1991-11-13 | Toshiba Corp | 半導体集積回路装置 |
US5047833A (en) * | 1990-10-17 | 1991-09-10 | International Rectifier Corporation | Solderable front metal contact for MOS devices |
US5153507A (en) * | 1990-11-16 | 1992-10-06 | Vlsi Technology, Inc. | Multi-purpose bond pad test die |
JPH04290272A (ja) * | 1991-03-19 | 1992-10-14 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
DE69109468T2 (de) * | 1991-05-23 | 1995-12-14 | Sgs Thomson Microelectronics | Elektronische Leistungsanordnung realisiert durch eine Reihe elementarer Halbleiterbauelemente in Parallelverbindung und verwandtes Herstellungsverfahren. |
JP2550248B2 (ja) * | 1991-10-14 | 1996-11-06 | 株式会社東芝 | 半導体集積回路装置およびその製造方法 |
JP3185292B2 (ja) * | 1991-12-12 | 2001-07-09 | 関西日本電気株式会社 | 半導体装置 |
EP0660402B1 (de) * | 1993-12-24 | 1998-11-04 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Leistungs-Halbleiterbauelement |
JP3256636B2 (ja) * | 1994-09-15 | 2002-02-12 | 株式会社東芝 | 圧接型半導体装置 |
-
1993
- 1993-12-24 DE DE1993621965 patent/DE69321965T2/de not_active Expired - Fee Related
- 1993-12-24 EP EP19930830523 patent/EP0660396B1/de not_active Expired - Lifetime
-
1994
- 1994-12-26 JP JP32275894A patent/JP2809998B2/ja not_active Expired - Fee Related
-
1997
- 1997-05-22 US US08/861,492 patent/US5821616A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2809998B2 (ja) | 1998-10-15 |
DE69321965D1 (de) | 1998-12-10 |
US5821616A (en) | 1998-10-13 |
EP0660396A1 (de) | 1995-06-28 |
EP0660396B1 (de) | 1998-11-04 |
JPH07202202A (ja) | 1995-08-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |