GB1224335A - N-channel field effect transistor - Google Patents

N-channel field effect transistor

Info

Publication number
GB1224335A
GB1224335A GB4441868A GB4441868A GB1224335A GB 1224335 A GB1224335 A GB 1224335A GB 4441868 A GB4441868 A GB 4441868A GB 4441868 A GB4441868 A GB 4441868A GB 1224335 A GB1224335 A GB 1224335A
Authority
GB
United Kingdom
Prior art keywords
type
source
drain
region
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4441868A
Inventor
Ronald Eugene Harris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
North American Rockwell Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North American Rockwell Corp filed Critical North American Rockwell Corp
Publication of GB1224335A publication Critical patent/GB1224335A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • A—HUMAN NECESSITIES
    • A45—HAND OR TRAVELLING ARTICLES
    • A45C—PURSES; LUGGAGE; HAND CARRIED BAGS
    • A45C15/00—Purses, bags, luggage or other receptacles covered by groups A45C1/00 - A45C11/00, combined with other objects or articles
    • A45C15/04—Purses, bags, luggage or other receptacles covered by groups A45C1/00 - A45C11/00, combined with other objects or articles with mirrors
    • A—HUMAN NECESSITIES
    • A45—HAND OR TRAVELLING ARTICLES
    • A45C—PURSES; LUGGAGE; HAND CARRIED BAGS
    • A45C3/00—Flexible luggage; Handbags
    • A45C3/10—Beach-bags; Watertight beach-bags
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact

Abstract

1,224,335. Semi-conductor devices. NORTH AMERICAN ROCKWELL CORP. 18 Sept., 1968 [28 Nov., 1967], No. 44418/68. Heading HlK. In an FET having N type source and drain regions the source and channel are separated by a P type isolation region. The P type reigon reduces the current which normally flows with zero gate bias. As shown, Fig. 1 an N channel enhancement mode IGFET is produced in a high resistivity P type silicon substrate 12 by forming a silicon dioxide layer 16 photomasking and exposing source and drain region sites, covering the drain site and diffusing boron into the source site to form P+ type isolation region 30 and then forming N+ type source and drain regions 18, 20 by diffusion. Aluminium is vapour deposited through a mask to form source, drain and gate electrodes 22, 24, 28. In a second embodiment, Fig. 5 (not shown) a thin P type semi-conductor layer (50) is epitaxially deposited on a single crystal insulating substrate (42), a central strip is masked with oxide (54), a P+ type zone (52) is formed extending beneath the oxide at one side and N+ type source and drain regions are produced by diffusion. The P+ type zone (52) separates the source from the channel. The semi-conductor material may be silicon, germanium or gallium arsenide, and the insulating substrate may be of sapphire, magnesium oxide, beryllium oxide or spinel. In a second modification, Fig. 7 (not shown), the P<SP>+</SP> type region is extended laterally and is provided with an electrode by means of which this region may be biased. The device can operate in both the depletion and the enhancement modes.
GB4441868A 1967-11-28 1968-09-18 N-channel field effect transistor Expired GB1224335A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68864867A 1967-11-28 1967-11-28

Publications (1)

Publication Number Publication Date
GB1224335A true GB1224335A (en) 1971-03-10

Family

ID=24765208

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1226080D Expired GB1226080A (en) 1967-11-28 1968-09-18
GB4441868A Expired GB1224335A (en) 1967-11-28 1968-09-18 N-channel field effect transistor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB1226080D Expired GB1226080A (en) 1967-11-28 1968-09-18

Country Status (3)

Country Link
DE (1) DE1811492A1 (en)
GB (2) GB1226080A (en)
NL (1) NL6815161A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2637479A1 (en) * 1975-09-04 1977-03-10 Westinghouse Electric Corp MOS FIELD EFFECT TRANSISTOR
DE2734694A1 (en) * 1976-08-05 1978-02-09 Ibm INSULATING FIELD EFFECT TRANSISTOR WITH SMALL CHANNEL LENGTH AND METHOD FOR ITS PRODUCTION
DE3142448A1 (en) * 1980-12-12 1982-06-24 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa MOS SEMICONDUCTOR DEVICE AND METHOD FOR THEIR PRODUCTION
GB2154366A (en) * 1984-01-06 1985-09-04 Texas Instruments Ltd Field effect transistors
US4933730A (en) * 1986-05-23 1990-06-12 Fujitsu Limited Semiconductor device having a high breakdown voltage characteristic
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5130767A (en) * 1979-05-14 1992-07-14 International Rectifier Corporation Plural polygon source pattern for mosfet
US5298764A (en) * 1991-03-08 1994-03-29 Hitachi, Ltd. Semiconductor memory device having a field effect transistor with a channel formed from a polycrystalline silicon film
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5592026A (en) * 1993-12-24 1997-01-07 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure pad assembly for lead bonding
US5631476A (en) * 1994-08-02 1997-05-20 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device chip and package assembly
US5798287A (en) * 1993-12-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Method for forming a power MOS device chip
US5821616A (en) * 1993-12-24 1998-10-13 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Power MOS device chip and package assembly
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5024084A (en) * 1973-07-05 1975-03-14
DE3028718C2 (en) * 1979-07-31 1982-08-19 Sharp K.K., Osaka Thin film transistor in connection with a display device
JPS5998557A (en) * 1982-11-27 1984-06-06 Nissan Motor Co Ltd Mos transistor
EP0110320B1 (en) * 1982-11-27 1987-03-11 Nissan Motor Co., Ltd. A mos transistor

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2637479A1 (en) * 1975-09-04 1977-03-10 Westinghouse Electric Corp MOS FIELD EFFECT TRANSISTOR
DE2734694A1 (en) * 1976-08-05 1978-02-09 Ibm INSULATING FIELD EFFECT TRANSISTOR WITH SMALL CHANNEL LENGTH AND METHOD FOR ITS PRODUCTION
US5598018A (en) * 1978-10-13 1997-01-28 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5191396A (en) * 1978-10-13 1993-03-02 International Rectifier Corp. High power mosfet with low on-resistance and high breakdown voltage
US5742087A (en) * 1978-10-13 1998-04-21 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5130767A (en) * 1979-05-14 1992-07-14 International Rectifier Corporation Plural polygon source pattern for mosfet
DE3142448A1 (en) * 1980-12-12 1982-06-24 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa MOS SEMICONDUCTOR DEVICE AND METHOD FOR THEIR PRODUCTION
US4484209A (en) * 1980-12-12 1984-11-20 Tokyo Shibaura Denki Kabushiki Kaisha SOS Mosfet with thinned channel contact region
GB2154366A (en) * 1984-01-06 1985-09-04 Texas Instruments Ltd Field effect transistors
US4933730A (en) * 1986-05-23 1990-06-12 Fujitsu Limited Semiconductor device having a high breakdown voltage characteristic
US5298764A (en) * 1991-03-08 1994-03-29 Hitachi, Ltd. Semiconductor memory device having a field effect transistor with a channel formed from a polycrystalline silicon film
US5592026A (en) * 1993-12-24 1997-01-07 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure pad assembly for lead bonding
US5798287A (en) * 1993-12-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Method for forming a power MOS device chip
US5821616A (en) * 1993-12-24 1998-10-13 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Power MOS device chip and package assembly
US5888889A (en) * 1993-12-24 1999-03-30 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure pad assembly for lead bonding
US5631476A (en) * 1994-08-02 1997-05-20 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device chip and package assembly
US5851855A (en) * 1994-08-02 1998-12-22 Sgs-Thomson Microelectronics S.R.L. Process for manufacturing a MOS-technology power device chip and package assembly
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US6046473A (en) * 1995-06-07 2000-04-04 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of MOS-gated power devices

Also Published As

Publication number Publication date
GB1226080A (en) 1971-03-24
NL6815161A (en) 1969-05-30
DE1811492A1 (en) 1969-08-07

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