KR900010967A - 고주파 반도체 데바이스용 tab테이프 - Google Patents

고주파 반도체 데바이스용 tab테이프 Download PDF

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Publication number
KR900010967A
KR900010967A KR1019890017850A KR890017850A KR900010967A KR 900010967 A KR900010967 A KR 900010967A KR 1019890017850 A KR1019890017850 A KR 1019890017850A KR 890017850 A KR890017850 A KR 890017850A KR 900010967 A KR900010967 A KR 900010967A
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KR
South Korea
Prior art keywords
tab tape
conductor circuit
conductor
hole
layer
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KR1019890017850A
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English (en)
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KR930002515B1 (ko
Inventor
노리오 와다
가쯔야 후까세
히로후미 우찌다
Original Assignee
이노우에 사다오
신고오덴기 고오교오 가부시끼가이샤
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Publication of KR900010967A publication Critical patent/KR900010967A/ko
Application granted granted Critical
Publication of KR930002515B1 publication Critical patent/KR930002515B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49572—Lead-frames or other flat leads consisting of thin flexible metallic tape with or without a film carrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12361—All metal or with adjacent metals having aperture or cut
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12542—More than one such component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12889—Au-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

내용 없음

Description

고주파 반도체 데바이스용 TAB테이프
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1의 TAB테이프의 일부 평면도, 제2도(a), (b)와 제3도(a), (b)와 제4도(a), (b)와 제5도(a), (b)는 각각 서로 유사한 본 발명의 제1 의 TAB테이프의 일부 확대평면도와 그 A-A단면도, 제6도(a), (b)와 제7도(a), (b)와 제 8도 (a), (b)와 제 9 도(a), (b)는 각각 서로 유사한 본 발명의 제 2 의 TAB테이프의 일부 확대 평면도의 그 B-B단면도.

Claims (2)

  1. 절연필름위에 도체회로를 형성한 TAB테이프에 있어서, 상기 도체회로의 고주파신호를 전달하는 전송로 양측의 절연필름에따라서 1개 내지 복수개의 홀을 형성하여 이 홀 내주면 또는 홀내 공간에 도체층을 형성하는 동시에 상기 도체회로의 전송로가 위치하는 측과 반대측의 절연필름 위에 그랜드층을 형성하고 이 그랜드층에 상기 홀내의 도체층을 연속시켜서 접속시킨것을 특징으로 하는 고주파반도체 데바이스용 TAB테이프.
  2. 절연필름위에 도체회로를 형성한 TAB테이프에 있어서, 그 도체회로위를 절연필름으로 덮는 동시에 상기 도체회로의 고주파회로를 전달하는 전송로 양측의 상하의 절연필름에 따라서 이 상하의 절연필름을 관통하는 1개 내지 복수개의 홀을 형성하고 이 홀 내주면 또는 홀내 공간에 도체층을 형성하는 동시에 상기도체회로의 전송로가 위치하는 측과 반대층의 상하의 절연 필름위에 그랜드층을 형성하고 이 그랜드층에 상기 홀내의 도체 층을 연속시켜서 접속시킨 것을 특징으로 하는고주파 반도체 데바이스용 TAB테이프.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890017850A 1988-12-13 1989-12-04 고주파 반도체 데바이스용 tab테이프 KR930002515B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63-314400 1988-12-13
JP63314400A JP2687152B2 (ja) 1988-12-13 1988-12-13 高周波半導体デバイス用のｔａｂテープ
JP88-314400 1988-12-13

Publications (2)

Publication Number Publication Date
KR900010967A true KR900010967A (ko) 1990-07-11
KR930002515B1 KR930002515B1 (ko) 1993-04-03

Family

ID=18052895

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890017850A KR930002515B1 (ko) 1988-12-13 1989-12-04 고주파 반도체 데바이스용 tab테이프

Country Status (3)

Country Link
US (1) US5087530A (ko)
JP (1) JP2687152B2 (ko)
KR (1) KR930002515B1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376909A (en) * 1992-05-29 1994-12-27 Texas Instruments Incorporated Device packaging
JPH0653277A (ja) * 1992-06-04 1994-02-25 Lsi Logic Corp 半導体装置アセンブリおよびその組立方法
JPH0629428A (ja) * 1992-07-07 1994-02-04 Mitsubishi Electric Corp 半導体装置
US5468994A (en) * 1992-12-10 1995-11-21 Hewlett-Packard Company High pin count package for semiconductor device
US5448020A (en) * 1993-12-17 1995-09-05 Pendse; Rajendra D. System and method for forming a controlled impedance flex circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3763404A (en) * 1968-03-01 1973-10-02 Gen Electric Semiconductor devices and manufacture thereof
US3838984A (en) * 1973-04-16 1974-10-01 Sperry Rand Corp Flexible carrier and interconnect for uncased ic chips
US4621278A (en) * 1981-12-30 1986-11-04 Sanyo Electric Co., Ltd. Composite film, semiconductor device employing the same and method of manufacturing
JPS61142749A (ja) * 1984-12-14 1986-06-30 Mitsubishi Electric Corp テ−プキヤリア装置
US4783697A (en) * 1985-01-07 1988-11-08 Motorola, Inc. Leadless chip carrier for RF power transistors or the like
US4774635A (en) * 1986-05-27 1988-09-27 American Telephone And Telegraph Company At&T Bell Laboratories Semiconductor package with high density I/O lead connection
JP2641869B2 (ja) * 1987-07-24 1997-08-20 三菱電機株式会社 半導体装置の製造方法
JPS6484625A (en) * 1987-09-28 1989-03-29 Toshiba Corp Semiconductor integrated circuit device using film carrier

Also Published As

Publication number Publication date
JPH02159013A (ja) 1990-06-19
KR930002515B1 (ko) 1993-04-03
JP2687152B2 (ja) 1997-12-08
US5087530A (en) 1992-02-11

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