SE8904120L - Foer hoegspaenning avsedd integrerad krets - Google Patents
Foer hoegspaenning avsedd integrerad kretsInfo
- Publication number
- SE8904120L SE8904120L SE8904120A SE8904120A SE8904120L SE 8904120 L SE8904120 L SE 8904120L SE 8904120 A SE8904120 A SE 8904120A SE 8904120 A SE8904120 A SE 8904120A SE 8904120 L SE8904120 L SE 8904120L
- Authority
- SE
- Sweden
- Prior art keywords
- integrated circuit
- high voltage
- before high
- voltage intended
- intended integrated
- Prior art date
Links
- 239000004020 conductor Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 230000004913 activation Effects 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE8904120A SE465193B (sv) | 1989-12-06 | 1989-12-06 | Foer hoegspaenning avsedd ic-krets |
GB9024952A GB2238910B (en) | 1989-12-06 | 1990-11-16 | High voltage integrated circuit |
KR1019900018872A KR960001614B1 (ko) | 1989-12-06 | 1990-11-21 | 고전압 집적회로 |
IT02220190A IT1243934B (it) | 1989-12-06 | 1990-11-27 | Circuito integrato ad alta tensione. |
US07/855,490 US5861656A (en) | 1989-12-06 | 1992-03-23 | High voltage integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE8904120A SE465193B (sv) | 1989-12-06 | 1989-12-06 | Foer hoegspaenning avsedd ic-krets |
Publications (3)
Publication Number | Publication Date |
---|---|
SE8904120D0 SE8904120D0 (sv) | 1989-12-06 |
SE8904120L true SE8904120L (sv) | 1991-06-07 |
SE465193B SE465193B (sv) | 1991-08-05 |
Family
ID=20377705
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE8904120A SE465193B (sv) | 1989-12-06 | 1989-12-06 | Foer hoegspaenning avsedd ic-krets |
Country Status (5)
Country | Link |
---|---|
US (1) | US5861656A (sv) |
KR (1) | KR960001614B1 (sv) |
GB (1) | GB2238910B (sv) |
IT (1) | IT1243934B (sv) |
SE (1) | SE465193B (sv) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6246070B1 (en) * | 1998-08-21 | 2001-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same |
JP4493741B2 (ja) * | 1998-09-04 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
EP1026732A1 (en) * | 1999-02-05 | 2000-08-09 | Motorola, Inc. | A method of forming a high voltage semiconductor device |
US6580107B2 (en) * | 2000-10-10 | 2003-06-17 | Sanyo Electric Co., Ltd. | Compound semiconductor device with depletion layer stop region |
JP2003229502A (ja) * | 2002-02-01 | 2003-08-15 | Mitsubishi Electric Corp | 半導体装置 |
US6683329B2 (en) * | 2002-02-28 | 2004-01-27 | Oki Electric Industry Co., Ltd. | Semiconductor device with slot above guard ring |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3836998A (en) * | 1969-01-16 | 1974-09-17 | Signetics Corp | High voltage bipolar semiconductor device and integrated circuit using the same and method |
US3611071A (en) * | 1969-04-10 | 1971-10-05 | Ibm | Inversion prevention system for semiconductor devices |
JPS4836598B1 (sv) * | 1969-09-05 | 1973-11-06 | ||
JPS4914390B1 (sv) * | 1969-10-29 | 1974-04-06 | ||
JPS501872B1 (sv) * | 1970-01-30 | 1975-01-22 | ||
JPS4940394B1 (sv) * | 1970-08-28 | 1974-11-01 | ||
DE2603747A1 (de) * | 1976-01-31 | 1977-08-04 | Licentia Gmbh | Integrierte schaltungsanordnung |
JPS5811750B2 (ja) * | 1979-06-04 | 1983-03-04 | 株式会社日立製作所 | 高耐圧抵抗素子 |
JPS5955037A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | 半導体装置 |
JPS6066444A (ja) * | 1983-09-21 | 1985-04-16 | Seiko Epson Corp | 半導体装置 |
JPS60247940A (ja) * | 1984-05-23 | 1985-12-07 | Hitachi Ltd | 半導体装置およびその製造方法 |
US4606998A (en) * | 1985-04-30 | 1986-08-19 | International Business Machines Corporation | Barrierless high-temperature lift-off process |
US4825278A (en) * | 1985-10-17 | 1989-04-25 | American Telephone And Telegraph Company At&T Bell Laboratories | Radiation hardened semiconductor devices |
JPH01184942A (ja) * | 1988-01-20 | 1989-07-24 | Toshiba Corp | トリミング素子とその電気短絡方法 |
JPH0237776A (ja) * | 1988-07-28 | 1990-02-07 | Fujitsu Ltd | 半導体装置 |
-
1989
- 1989-12-06 SE SE8904120A patent/SE465193B/sv not_active IP Right Cessation
-
1990
- 1990-11-16 GB GB9024952A patent/GB2238910B/en not_active Expired - Fee Related
- 1990-11-21 KR KR1019900018872A patent/KR960001614B1/ko not_active IP Right Cessation
- 1990-11-27 IT IT02220190A patent/IT1243934B/it active IP Right Grant
-
1992
- 1992-03-23 US US07/855,490 patent/US5861656A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5861656A (en) | 1999-01-19 |
KR920000146A (ko) | 1992-01-10 |
GB2238910A (en) | 1991-06-12 |
IT1243934B (it) | 1994-06-28 |
IT9022201A0 (it) | 1990-11-27 |
SE8904120D0 (sv) | 1989-12-06 |
KR960001614B1 (ko) | 1996-02-02 |
GB2238910B (en) | 1993-08-11 |
IT9022201A1 (it) | 1991-06-07 |
SE465193B (sv) | 1991-08-05 |
GB9024952D0 (en) | 1991-01-02 |
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Legal Events
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NAL | Patent in force |
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