DE69030426D1 - Halbleiterspeicherbauteil mit verbessertem "Layout" der Kontakte - Google Patents

Halbleiterspeicherbauteil mit verbessertem "Layout" der Kontakte

Info

Publication number
DE69030426D1
DE69030426D1 DE69030426T DE69030426T DE69030426D1 DE 69030426 D1 DE69030426 D1 DE 69030426D1 DE 69030426 T DE69030426 T DE 69030426T DE 69030426 T DE69030426 T DE 69030426T DE 69030426 D1 DE69030426 D1 DE 69030426D1
Authority
DE
Germany
Prior art keywords
layout
contacts
improved
semiconductor memory
memory component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69030426T
Other languages
English (en)
Other versions
DE69030426T2 (de
Inventor
Taiji Ema
Koichi Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69030426D1 publication Critical patent/DE69030426D1/de
Publication of DE69030426T2 publication Critical patent/DE69030426T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
DE69030426T 1989-08-19 1990-08-17 Halbleiterspeicherbauteil mit verbessertem "Layout" der Kontakte Expired - Lifetime DE69030426T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP21342689 1989-08-19
JP2070006A JP2974252B2 (ja) 1989-08-19 1990-03-20 半導体記憶装置
US08/669,765 US5812444A (en) 1989-08-19 1996-06-25 Semiconductor memory device with bit line contact areas and storage capacitor contact areas

Publications (2)

Publication Number Publication Date
DE69030426D1 true DE69030426D1 (de) 1997-05-15
DE69030426T2 DE69030426T2 (de) 1997-07-17

Family

ID=27300214

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69030426T Expired - Lifetime DE69030426T2 (de) 1989-08-19 1990-08-17 Halbleiterspeicherbauteil mit verbessertem "Layout" der Kontakte

Country Status (5)

Country Link
US (2) US5812444A (de)
EP (3) EP0762502B1 (de)
JP (1) JP2974252B2 (de)
KR (1) KR950009388B1 (de)
DE (1) DE69030426T2 (de)

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KR920007358B1 (ko) * 1990-03-28 1992-08-31 금성일렉트론 주식회사 고집적 메모리 셀 및 코아 어레이 구조
EP0464251B1 (de) * 1990-07-06 1996-03-13 Fujitsu Limited Dynamischer Speicher mit wahlfreiem Zugriff mit verbessertem Layout und Methode zur Anordnung des Speicherzellenmusters
JP2792211B2 (ja) * 1990-07-06 1998-09-03 日本電気株式会社 半導体記憶装置
JP2787852B2 (ja) * 1991-04-15 1998-08-20 日本電気株式会社 半導体メモリ装置
DE4139719C1 (de) * 1991-12-02 1993-04-08 Siemens Ag, 8000 Muenchen, De
US6831322B2 (en) 1995-06-05 2004-12-14 Fujitsu Limited Semiconductor memory device and method for fabricating the same
US6617205B1 (en) 1995-11-20 2003-09-09 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same
EP0780901A3 (de) * 1995-12-21 1999-11-10 Texas Instruments Incorporated Layout von DRAM-Speicherzellenanordnung
US6025221A (en) * 1997-08-22 2000-02-15 Micron Technology, Inc. Processing methods of forming integrated circuitry memory devices, methods of forming DRAM arrays, and related semiconductor masks
US6380026B2 (en) 1997-08-22 2002-04-30 Micron Technology, Inc. Processing methods of forming integrated circuitry memory devices, methods of forming DRAM arrays, and related semiconductor masks
US6167541A (en) * 1998-03-24 2000-12-26 Micron Technology, Inc. Method for detecting or preparing intercell defects in more than one array of a memory device
JP3137185B2 (ja) * 1998-04-09 2001-02-19 日本電気株式会社 半導体記憶装置
TW417290B (en) * 1998-06-26 2001-01-01 Texas Instruments Inc Relaxed layout for storage nodes for dynamic random access memories
DE19903198C1 (de) * 1999-01-27 2000-05-11 Siemens Ag Integrierter Speicher und entsprechendes Betriebsverfahren
JP2000332216A (ja) * 1999-05-18 2000-11-30 Sony Corp 半導体装置及びその製造方法
US6339239B1 (en) * 2000-06-23 2002-01-15 International Business Machines Corporation DRAM cell layout for node capacitance enhancement
JP2003108251A (ja) * 2001-09-28 2003-04-11 Mitsumi Electric Co Ltd ジョイスティック
FR2830365B1 (fr) * 2001-09-28 2004-12-24 St Microelectronics Sa Memoire vive dynamique
US6696339B1 (en) 2002-08-21 2004-02-24 Micron Technology, Inc. Dual-damascene bit line structures for microelectronic devices and methods of fabricating microelectronic devices
JP4415745B2 (ja) * 2004-04-22 2010-02-17 ソニー株式会社 固体メモリ装置
US7746680B2 (en) * 2007-12-27 2010-06-29 Sandisk 3D, Llc Three dimensional hexagonal matrix memory array
WO2009086441A2 (en) * 2007-12-27 2009-07-09 Zettacore, Inc. Self-contained charge storage molecules for use in molecular capacitors
US20090257263A1 (en) * 2008-04-15 2009-10-15 Vns Portfolio Llc Method and Apparatus for Computer Memory
WO2010009083A1 (en) * 2008-07-14 2010-01-21 Zettacore, Inc. Phosphonium ionic liquids, compositions, methods of making and devices formed there from
US8907133B2 (en) 2008-07-14 2014-12-09 Esionic Es, Inc. Electrolyte compositions and electrochemical double layer capacitors formed there from
US8846246B2 (en) 2008-07-14 2014-09-30 Esionic Es, Inc. Phosphonium ionic liquids, compositions, methods of making and electrolytic films formed there from
US8927775B2 (en) 2008-07-14 2015-01-06 Esionic Es, Inc. Phosphonium ionic liquids, salts, compositions, methods of making and devices formed there from
US9768181B2 (en) * 2014-04-28 2017-09-19 Micron Technology, Inc. Ferroelectric memory and methods of forming the same
US9553048B1 (en) * 2015-09-04 2017-01-24 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method of semiconductor device
CN109830480B (zh) * 2017-11-23 2022-02-18 联华电子股份有限公司 动态随机存取存储器
KR102611116B1 (ko) * 2018-08-16 2023-12-08 에스케이하이닉스 주식회사 반도체 메모리 장치

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US4319342A (en) * 1979-12-26 1982-03-09 International Business Machines Corporation One device field effect transistor (FET) AC stable random access memory (RAM) array
JPS57111061A (en) * 1980-12-26 1982-07-10 Fujitsu Ltd Semiconductor memory unit
JPS57186289A (en) * 1981-05-13 1982-11-16 Hitachi Ltd Semiconductor memory
JPS58154256A (ja) * 1982-03-10 1983-09-13 Hitachi Ltd 半導体装置
US4574465A (en) * 1982-04-13 1986-03-11 Texas Instruments Incorporated Differing field oxide thicknesses in dynamic memory device
JPS5922358A (ja) * 1982-07-28 1984-02-04 Toshiba Corp 半導体記憶装置
US4651183A (en) * 1984-06-28 1987-03-17 International Business Machines Corporation High density one device memory cell arrays
JPS6140053A (ja) * 1984-07-31 1986-02-26 Toshiba Corp 半導体装置
JPH0714006B2 (ja) * 1985-05-29 1995-02-15 株式会社東芝 ダイナミツク型メモリ
JPS62158359A (ja) * 1986-01-06 1987-07-14 Toshiba Corp 半導体装置
JPH0787219B2 (ja) * 1986-09-09 1995-09-20 三菱電機株式会社 半導体記憶装置
JPS6367771A (ja) * 1986-09-09 1988-03-26 Mitsubishi Electric Corp 半導体記憶装置
US4959698A (en) * 1986-10-08 1990-09-25 Mitsubishi Denki Kabushiki Kaisha Memory cell of a semiconductor memory device
JPH0815208B2 (ja) * 1987-07-01 1996-02-14 三菱電機株式会社 半導体記憶装置
JPH01130392A (ja) * 1987-11-17 1989-05-23 Mitsubishi Electric Corp ダイナミック型ランダムアクセスメモリ装置
KR910009805B1 (ko) * 1987-11-25 1991-11-30 후지쓰 가부시끼가이샤 다이나믹 랜덤 액세스 메모리 장치와 그의 제조방법
JPH0666434B2 (ja) * 1987-12-28 1994-08-24 株式会社東芝 半導体記憶装置
JP2590171B2 (ja) * 1988-01-08 1997-03-12 株式会社日立製作所 半導体記憶装置
JPH0713858B2 (ja) * 1988-08-30 1995-02-15 三菱電機株式会社 半導体記憶装置
JPH02137364A (ja) * 1988-11-18 1990-05-25 Toshiba Corp 半導体記憶装置
JP2777896B2 (ja) * 1989-01-20 1998-07-23 富士通株式会社 半導体記憶装置
JPH07120714B2 (ja) * 1989-05-23 1995-12-20 株式会社東芝 半導体記憶装置
JP2508288B2 (ja) * 1989-08-30 1996-06-19 三菱電機株式会社 半導体記憶装置
US5276641A (en) * 1991-12-12 1994-01-04 International Business Machines Corporation Hybrid open folded sense amplifier architecture for a memory device
US5781469A (en) * 1997-01-24 1998-07-14 Atmel Corporation Bitline load and precharge structure for an SRAM memory
US5877976A (en) * 1997-10-28 1999-03-02 International Business Machines Corporation Memory system having a vertical bitline topology and method therefor

Also Published As

Publication number Publication date
KR910005307A (ko) 1991-03-30
EP0756327B1 (de) 2002-11-20
EP0428247B1 (de) 1997-04-09
KR950009388B1 (ko) 1995-08-21
EP0756327A1 (de) 1997-01-29
JP2974252B2 (ja) 1999-11-10
DE69030426T2 (de) 1997-07-17
EP0428247A3 (en) 1991-12-04
EP0428247A2 (de) 1991-05-22
US5812444A (en) 1998-09-22
EP0762502A1 (de) 1997-03-12
JPH03214670A (ja) 1991-09-19
EP0762502B1 (de) 2002-02-06
US6026010A (en) 2000-02-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP