DE69031603D1 - Integrierter Torschaltungs-Schaltkreis - Google Patents

Integrierter Torschaltungs-Schaltkreis

Info

Publication number
DE69031603D1
DE69031603D1 DE69031603T DE69031603T DE69031603D1 DE 69031603 D1 DE69031603 D1 DE 69031603D1 DE 69031603 T DE69031603 T DE 69031603T DE 69031603 T DE69031603 T DE 69031603T DE 69031603 D1 DE69031603 D1 DE 69031603D1
Authority
DE
Germany
Prior art keywords
gating circuit
integrated
integrated gating
circuit
gating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69031603T
Other languages
English (en)
Other versions
DE69031603T2 (de
Inventor
Harold S Crafts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MagnaChip Semiconductor Ltd
NCR International Inc
Original Assignee
NCR International Inc
Hyundai Electronics America Inc
Symbios Logic Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR International Inc, Hyundai Electronics America Inc, Symbios Logic Inc filed Critical NCR International Inc
Application granted granted Critical
Publication of DE69031603D1 publication Critical patent/DE69031603D1/de
Publication of DE69031603T2 publication Critical patent/DE69031603T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
DE69031603T 1989-01-17 1990-01-16 Integrierter Torschaltungs-Schaltkreis Expired - Lifetime DE69031603T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/297,355 US4928160A (en) 1989-01-17 1989-01-17 Gate isolated base cell structure with off-grid gate polysilicon pattern

Publications (2)

Publication Number Publication Date
DE69031603D1 true DE69031603D1 (de) 1997-11-27
DE69031603T2 DE69031603T2 (de) 1998-05-20

Family

ID=23145973

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69031603T Expired - Lifetime DE69031603T2 (de) 1989-01-17 1990-01-16 Integrierter Torschaltungs-Schaltkreis

Country Status (4)

Country Link
US (1) US4928160A (de)
EP (1) EP0379330B1 (de)
JP (1) JP3154411B2 (de)
DE (1) DE69031603T2 (de)

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US5410173A (en) * 1991-01-28 1995-04-25 Kikushima; Ken'ichi Semiconductor integrated circuit device
US5764533A (en) * 1995-08-01 1998-06-09 Sun Microsystems, Inc. Apparatus and methods for generating cell layouts
US5990502A (en) * 1995-12-29 1999-11-23 Lsi Logic Corporation High density gate array cell architecture with metallization routing tracks having a variable pitch
US5923060A (en) * 1996-09-27 1999-07-13 In-Chip Systems, Inc. Reduced area gate array cell design based on shifted placement of alternate rows of cells
US5977574A (en) * 1997-03-28 1999-11-02 Lsi Logic Corporation High density gate array cell architecture with sharing of well taps between cells
US5981987A (en) 1997-12-02 1999-11-09 Nurlogic Design, Inc. Power ground metallization routing in a semiconductor device
JP3526450B2 (ja) * 2001-10-29 2004-05-17 株式会社東芝 半導体集積回路およびスタンダードセル配置設計方法
US7492013B2 (en) * 2005-06-27 2009-02-17 International Business Machines Corporation Systems and arrangements to interconnect components of a semiconductor device
US7956421B2 (en) 2008-03-13 2011-06-07 Tela Innovations, Inc. Cross-coupled transistor layouts in restricted gate level layout architecture
US9563733B2 (en) 2009-05-06 2017-02-07 Tela Innovations, Inc. Cell circuit and layout with linear finfet structures
US9009641B2 (en) 2006-03-09 2015-04-14 Tela Innovations, Inc. Circuits with linear finfet structures
US9035359B2 (en) 2006-03-09 2015-05-19 Tela Innovations, Inc. Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods
US8541879B2 (en) 2007-12-13 2013-09-24 Tela Innovations, Inc. Super-self-aligned contacts and method for making the same
US8448102B2 (en) 2006-03-09 2013-05-21 Tela Innovations, Inc. Optimizing layout of irregular structures in regular layout context
US7763534B2 (en) 2007-10-26 2010-07-27 Tela Innovations, Inc. Methods, structures and designs for self-aligning local interconnects used in integrated circuits
US8658542B2 (en) 2006-03-09 2014-02-25 Tela Innovations, Inc. Coarse grid design methods and structures
US8653857B2 (en) 2006-03-09 2014-02-18 Tela Innovations, Inc. Circuitry and layouts for XOR and XNOR logic
US8839175B2 (en) 2006-03-09 2014-09-16 Tela Innovations, Inc. Scalable meta-data objects
US7446352B2 (en) 2006-03-09 2008-11-04 Tela Innovations, Inc. Dynamic array architecture
US9230910B2 (en) 2006-03-09 2016-01-05 Tela Innovations, Inc. Oversized contacts and vias in layout defined by linearly constrained topology
US7888705B2 (en) 2007-08-02 2011-02-15 Tela Innovations, Inc. Methods for defining dynamic array section with manufacturing assurance halo and apparatus implementing the same
US8667443B2 (en) 2007-03-05 2014-03-04 Tela Innovations, Inc. Integrated circuit cell library for multiple patterning
US8713493B2 (en) * 2007-12-21 2014-04-29 Cadence Design Systems, Inc. System and method for solving connection violations
CN101946186B (zh) * 2007-12-21 2014-04-23 益华公司 用于解决连接冲突的系统和方法
US8453094B2 (en) 2008-01-31 2013-05-28 Tela Innovations, Inc. Enforcement of semiconductor structure regularity for localized transistors and interconnect
US7939443B2 (en) 2008-03-27 2011-05-10 Tela Innovations, Inc. Methods for multi-wire routing and apparatus implementing same
MY152456A (en) 2008-07-16 2014-09-30 Tela Innovations Inc Methods for cell phasing and placement in dynamic array architecture and implementation of the same
US9122832B2 (en) 2008-08-01 2015-09-01 Tela Innovations, Inc. Methods for controlling microloading variation in semiconductor wafer layout and fabrication
US8661392B2 (en) 2009-10-13 2014-02-25 Tela Innovations, Inc. Methods for cell boundary encroachment and layouts implementing the Same
US9159627B2 (en) 2010-11-12 2015-10-13 Tela Innovations, Inc. Methods for linewidth modification and apparatus implementing the same
US10127340B2 (en) 2016-09-30 2018-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Standard cell layout, semiconductor device having engineering change order (ECO) cells and method
CN110767661B (zh) * 2018-07-27 2023-07-07 京东方科技集团股份有限公司 阵列基板及其制备方法、显示装置
CN109492273B (zh) * 2018-10-22 2022-11-15 珠海一微半导体股份有限公司 一种基于通孔的自动打孔方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4161662A (en) * 1976-01-22 1979-07-17 Motorola, Inc. Standardized digital logic chip
JPS5890758A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp 相補形集積回路装置
JPS58112343A (ja) * 1981-12-26 1983-07-04 Olympus Optical Co Ltd 半導体装置およびその製造方法
JPS58122771A (ja) * 1982-01-14 1983-07-21 Nec Corp 半導体集積回路装置
US4613940A (en) * 1982-11-09 1986-09-23 International Microelectronic Products Method and structure for use in designing and building electronic systems in integrated circuits
JPS6065547A (ja) * 1983-09-20 1985-04-15 Sharp Corp 半導体装置
JPS6074647A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd 半導体集積回路装置
JPH0828480B2 (ja) * 1983-09-30 1996-03-21 富士通株式会社 半導体集積回路装置
JPS6074646A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd 半導体集積回路装置
US4591993A (en) * 1983-11-21 1986-05-27 International Business Machines Corporation Methodology for making logic circuits
US4633571A (en) * 1984-04-16 1987-01-06 At&T Bell Laboratories Method of manufacturing a CMOS cell array with transistor isolation
US4570176A (en) * 1984-04-16 1986-02-11 At&T Bell Laboratories CMOS Cell array with transistor isolation
EP0177336B1 (de) * 1984-10-03 1992-07-22 Fujitsu Limited Integrierte Gate-Matrixstruktur
US4627152A (en) * 1985-05-24 1986-12-09 International Business Machines Corporation Automatic layout for cascode voltage switch logic
JPS62276852A (ja) * 1986-05-23 1987-12-01 Mitsubishi Electric Corp 半導体集積回路装置
US4745084A (en) * 1986-11-12 1988-05-17 Vlsi Technology, Inc. Method of making a customized semiconductor integrated device

Also Published As

Publication number Publication date
EP0379330B1 (de) 1997-10-22
EP0379330A2 (de) 1990-07-25
US4928160A (en) 1990-05-22
JPH02234469A (ja) 1990-09-17
EP0379330A3 (de) 1992-02-19
DE69031603T2 (de) 1998-05-20
JP3154411B2 (ja) 2001-04-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DELAWAR

8328 Change in the person/name/address of the agent

Free format text: V. BEZOLD & SOZIEN, 80799 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: HYNIX SEMICONDUCTOR INC., ICHON, KYONGGI, KR

Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DEL, US

8327 Change in the person/name/address of the patent owner

Owner name: MAGNACHIP SEMICONDUCTOR, LTD., CHEONGJU, KR

Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DEL, US