KR900008628A - 반도체 제조장치 - Google Patents

반도체 제조장치

Info

Publication number
KR900008628A
KR900008628A KR1019890015987A KR890015987A KR900008628A KR 900008628 A KR900008628 A KR 900008628A KR 1019890015987 A KR1019890015987 A KR 1019890015987A KR 890015987 A KR890015987 A KR 890015987A KR 900008628 A KR900008628 A KR 900008628A
Authority
KR
South Korea
Prior art keywords
semiconductor manufacturing
manufacturing equipment
equipment
semiconductor
manufacturing
Prior art date
Application number
KR1019890015987A
Other languages
English (en)
Other versions
KR920010728B1 (ko
Inventor
야스카즈 마세
마사히로 아베
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR900008628A publication Critical patent/KR900008628A/ko
Application granted granted Critical
Publication of KR920010728B1 publication Critical patent/KR920010728B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1019890015987A 1988-11-04 1989-11-04 반도체 제조장치 KR920010728B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63278793A JP2644309B2 (ja) 1988-11-04 1988-11-04 半導体製造装置
JP63-278793 1988-11-04

Publications (2)

Publication Number Publication Date
KR900008628A true KR900008628A (ko) 1990-06-03
KR920010728B1 KR920010728B1 (ko) 1992-12-14

Family

ID=17602257

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890015987A KR920010728B1 (ko) 1988-11-04 1989-11-04 반도체 제조장치

Country Status (5)

Country Link
US (1) US5044311A (ko)
EP (1) EP0367289B1 (ko)
JP (1) JP2644309B2 (ko)
KR (1) KR920010728B1 (ko)
DE (1) DE68921286T2 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100715876B1 (ko) * 2006-06-12 2007-05-07 에스케이 텔레콤주식회사 이동 통신 시스템에서의 전력 분배 장치
KR20170019160A (ko) 2015-08-11 2017-02-21 기초과학연구원 고출력 광대역 고주파 결합기

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5900103A (en) 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
JP3257328B2 (ja) 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US6197703B1 (en) * 1998-08-17 2001-03-06 Advanced Micro Devices, Inc. Apparatus and method for manufacturing semiconductors using low dielectric constant materials
JP2001077088A (ja) 1999-09-02 2001-03-23 Tokyo Electron Ltd プラズマ処理装置
JP2001148378A (ja) * 1999-11-22 2001-05-29 Tokyo Electron Ltd プラズマ処理装置、クラスターツールおよびプラズマ制御方法
DE19959604A1 (de) * 1999-12-10 2001-06-13 Volkswagen Ag Reaktor für Plasmabeschichtungen und Plasmadiffusionsbehandlungen
DE19959603A1 (de) * 1999-12-10 2001-06-13 Volkswagen Ag Verfahren zum Beschichten der inneren Oberfläche eines Reaktorgefäßes eines Reaktors
TWI290589B (en) * 2000-10-02 2007-12-01 Tokyo Electron Ltd Vacuum processing device
JP3910821B2 (ja) * 2000-10-26 2007-04-25 東京エレクトロン株式会社 基板の処理装置
JP3953361B2 (ja) * 2002-05-08 2007-08-08 東京エレクトロン株式会社 基板処理装置および基板処理方法
US20040069223A1 (en) * 2002-10-10 2004-04-15 Taiwan Semiconductor Manufacturing Co., Ltd. Wall liner and slot liner for process chamber
JP4060684B2 (ja) * 2002-10-29 2008-03-12 日本発条株式会社 ステージ
JP4141234B2 (ja) * 2002-11-13 2008-08-27 キヤノンアネルバ株式会社 プラズマ処理装置
JP5077748B2 (ja) * 2007-09-06 2012-11-21 富士電機株式会社 成膜装置
US20090297731A1 (en) * 2008-05-30 2009-12-03 Asm Japan K.K. Apparatus and method for improving production throughput in cvd chamber
JP6386394B2 (ja) * 2015-02-18 2018-09-05 東芝メモリ株式会社 複合プロセス装置
KR20190046327A (ko) * 2017-10-26 2019-05-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS5992520A (ja) * 1982-11-19 1984-05-28 Hitachi Ltd 気体電気化学反応装置
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
JPS6057613A (ja) * 1983-09-09 1985-04-03 Hitachi Ltd プラズマｃｖｄ装置
JPS6196724A (ja) * 1984-10-17 1986-05-15 Agency Of Ind Science & Technol 容量結合型プラズマｃｖｄ装置
US4616597A (en) * 1984-10-31 1986-10-14 Rca Corporation Apparatus for making a plasma coating
US4576830A (en) * 1984-11-05 1986-03-18 Chronar Corp. Deposition of materials
JPS63190635A (ja) * 1987-01-29 1988-08-08 Denki Kogyo Kk マイクロ波プラズマ処理装置
JP2555062B2 (ja) * 1987-04-10 1996-11-20 株式会社日立製作所 プラズマ処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100715876B1 (ko) * 2006-06-12 2007-05-07 에스케이 텔레콤주식회사 이동 통신 시스템에서의 전력 분배 장치
KR20170019160A (ko) 2015-08-11 2017-02-21 기초과학연구원 고출력 광대역 고주파 결합기

Also Published As

Publication number Publication date
DE68921286D1 (de) 1995-03-30
EP0367289B1 (en) 1995-02-22
JP2644309B2 (ja) 1997-08-25
DE68921286T2 (de) 1995-08-03
EP0367289A2 (en) 1990-05-09
JPH02125430A (ja) 1990-05-14
US5044311A (en) 1991-09-03
KR920010728B1 (ko) 1992-12-14
EP0367289A3 (en) 1990-06-13

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Legal Events

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A201 Request for examination
G160 Decision to publish patent application
G160 Decision to publish patent application
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