KR920001711A - 반도체집적회로 - Google Patents
반도체집적회로 Download PDFInfo
- Publication number
- KR920001711A KR920001711A KR1019910010151A KR910010151A KR920001711A KR 920001711 A KR920001711 A KR 920001711A KR 1019910010151 A KR1019910010151 A KR 1019910010151A KR 910010151 A KR910010151 A KR 910010151A KR 920001711 A KR920001711 A KR 920001711A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor integrated
- integrated circuit
- digital circuit
- power
- guide well
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 반도체집적회로의 1실시예를 나타낸 구성설명도.
제2도와 제3도 및 제4도는 각각 본 발명에 따른 반도체집적회로의 다른 실시예를 나타낸 구성설명도,
제5도는 종래의 반도체집적회로를 나타낸 구성설명도이다.
* 도면의 주요부분에 대한 부호의 설명
10 : 디지탈회로부 11 : 제1Vcc배선
12 : 제 2Vcc배선 13,20 : 접촉부
14 : N형 반도체기판의 N+영역 15 : P챈널 MOS트랜지스터영역
16 : P웰 17 : N챈널 MOS트랜지스터영역
18 : 제1Vcc배선 19 : 제2Vcc배선
21 : P웰의 P+영역 30 : 디지탈회로부의 일부
31 : 가이드링용 웰 32 : 다른 디지탈회로부
33 : 디지탈회로부 34 : 아날로그회로부
Claims (4)
- 아날로그회로와 디지탈회로가 혼재된 반도체집적회로에 있어서, 디지탈회로부( 10)의 회로소자(15, 17)에 접속된 제1전원배선(11,18)과 디지탈회로부의 기판(14,2 1)에 접속된 제2전원배선(12,19)이 최소한 디지탈회로부영역내에서는 분리되어 형성된 것을 특징으로 하는 반도체집적회로.
- 제1항에 있어서, 상기 제1전원배선(11,18)과 제 2전원배선(12, 19)은 반도체칩상에서 분리된 채 상호 별개의 전원패드에 접속된 것을 특징으로 하는 반도체집적회로.
- 제1항 또는 제2항에 있어서, 상기 디지탈회로부의 일부(30)는 그 기판영역이 가이드링용 웰(31)에 의해 에워싸이고, 이 가이드링용 웰(31)에 제2전원배선(12,19)중 1개가 접속된 것을 특징으로 하는 반도체 집적회로.
- 제1항 또는 제2항에 있어서, 상기 디지탈회로부(33)는 그 기판영역이 가이드링용 웰(31)에 의해 에워싸이고, 이 가이드링용 웰(31)에 상기 제2전원배선(12,19)중 1개가 접속된 것을 특징으로 하는 반도체 집적회로.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP02-161416 | 1990-06-21 | ||
JP161416 | 1990-06-21 | ||
JP2161416A JP2619119B2 (ja) | 1990-06-21 | 1990-06-21 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920001711A true KR920001711A (ko) | 1992-01-30 |
KR940000895B1 KR940000895B1 (ko) | 1994-02-03 |
Family
ID=15734684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910010151A KR940000895B1 (ko) | 1990-06-21 | 1991-06-19 | 반도체 집적회로 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5231300A (ko) |
EP (1) | EP0464452B1 (ko) |
JP (1) | JP2619119B2 (ko) |
KR (1) | KR940000895B1 (ko) |
DE (1) | DE69131898T2 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3228589B2 (ja) * | 1993-03-15 | 2001-11-12 | 株式会社東芝 | マルチチップモジュール |
US5811882A (en) * | 1996-09-24 | 1998-09-22 | Philips Electronics North America Corporation | On-chip shielding coaxial conductors for mixed-signal IC |
US6744112B2 (en) * | 2002-10-01 | 2004-06-01 | International Business Machines Corporation | Multiple chip guard rings for integrated circuit and chip guard ring interconnect |
JP2009088328A (ja) * | 2007-10-01 | 2009-04-23 | Nec Electronics Corp | 半導体集積回路 |
JP5372578B2 (ja) | 2009-04-09 | 2013-12-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3002894C2 (de) * | 1980-01-28 | 1982-03-18 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte Halbleiterschaltung mit Transistoren |
US4442529A (en) * | 1981-02-04 | 1984-04-10 | At&T Bell Telephone Laboratories, Incorporated | Power supply rejection characteristics of CMOS circuits |
JPS5922357A (ja) * | 1982-07-28 | 1984-02-04 | Toshiba Corp | Cmos形半導体集積回路 |
JPS5923558A (ja) * | 1982-07-30 | 1984-02-07 | Hitachi Ltd | 半導体集積回路 |
JPS5943563A (ja) * | 1982-09-03 | 1984-03-10 | Olympus Optical Co Ltd | 半導体集積回路装置 |
US4727518A (en) * | 1984-02-17 | 1988-02-23 | Intel Corporation | Apparatus for limiting minority carrier injection in CMOS memories |
JPH0693497B2 (ja) * | 1986-07-30 | 1994-11-16 | 日本電気株式会社 | 相補型mis集積回路 |
US5060044A (en) * | 1987-05-28 | 1991-10-22 | Texas Instruments Incorporated | Integrated bipolar-CMOS circuit isolation for providing different backgate and substrate bias |
JPS648659A (en) * | 1987-06-30 | 1989-01-12 | Mitsubishi Electric Corp | Supplementary semiconductor integrated circuit device |
DE3886283T2 (de) * | 1987-07-10 | 1994-05-11 | Toshiba Kawasaki Kk | Halbleiterbauelement mit Bereichen unterschiedlicher Störstellenkonzentration. |
JPH01258461A (ja) * | 1988-04-08 | 1989-10-16 | Hitachi Ltd | 集積回路 |
JPH02110963A (ja) * | 1988-10-19 | 1990-04-24 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2771233B2 (ja) * | 1989-03-24 | 1998-07-02 | 日本電気株式会社 | 半導体集積回路装置 |
US5099239A (en) * | 1989-09-21 | 1992-03-24 | Xerox Corporation | Multi-channel analogue to digital convertor |
-
1990
- 1990-06-21 JP JP2161416A patent/JP2619119B2/ja not_active Expired - Fee Related
-
1991
- 1991-06-18 EP EP91109945A patent/EP0464452B1/en not_active Expired - Lifetime
- 1991-06-18 DE DE69131898T patent/DE69131898T2/de not_active Expired - Fee Related
- 1991-06-18 US US07/716,783 patent/US5231300A/en not_active Expired - Fee Related
- 1991-06-19 KR KR1019910010151A patent/KR940000895B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69131898D1 (de) | 2000-02-17 |
EP0464452B1 (en) | 2000-01-12 |
JPH0453255A (ja) | 1992-02-20 |
DE69131898T2 (de) | 2000-07-06 |
US5231300A (en) | 1993-07-27 |
KR940000895B1 (ko) | 1994-02-03 |
EP0464452A2 (en) | 1992-01-08 |
EP0464452A3 (en) | 1992-04-01 |
JP2619119B2 (ja) | 1997-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR890012398A (ko) | Mos형 반도체장치의 입력보호회로 | |
KR920017126A (ko) | 복수의 인터페이스 레벨을 출력 가능한 반도체 집적 회로장치 | |
KR920005297A (ko) | 반도체집적회로 장치 | |
KR910005448A (ko) | 반도체 집적회로 | |
KR890007424A (ko) | 반도체집적회로 | |
KR900013622A (ko) | 반도체 집적회로장치 | |
KR920001711A (ko) | 반도체집적회로 | |
KR920007194A (ko) | 표준 셀 방식의 반도체 집접회로 | |
KR920010906A (ko) | 반도체 기억장치 | |
KR900017164A (ko) | 반도체장치 | |
KR910015039A (ko) | 반도체웨이퍼 | |
KR880009448A (ko) | 반도체 집적회로 장치 | |
KR930020682A (ko) | 반 주문형 집적 회로 | |
KR910019340A (ko) | 반도체 집적회로 | |
KR890007406A (ko) | 고밀도 집적회로 | |
KR970077390A (ko) | 패드를 이용한 반도체 장치 | |
KR920000146A (ko) | 고전압 직접회로 | |
KR960002788A (ko) | 반도체 소자의 데이터 출력버퍼 | |
KR850005159A (ko) | 기판에 전원 공급 통로를 가진 반도체 집적회로 | |
EP0381237A3 (en) | Integrated semiconductor circuit with p and n channel mos transistors | |
KR910017628A (ko) | 반도체 기억장치 | |
KR900019214A (ko) | 반도체장치 | |
KR850003069A (ko) | 반도체 집적회로 장치 | |
KR850007315A (ko) | 상보형(相補形) 금속산화막 반도체 직접회로 장치 | |
KR910010711A (ko) | 집적 회로 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20050131 Year of fee payment: 12 |
|
LAPS | Lapse due to unpaid annual fee |