JP2009088328A - 半導体集積回路 - Google Patents
半導体集積回路 Download PDFInfo
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- JP2009088328A JP2009088328A JP2007257433A JP2007257433A JP2009088328A JP 2009088328 A JP2009088328 A JP 2009088328A JP 2007257433 A JP2007257433 A JP 2007257433A JP 2007257433 A JP2007257433 A JP 2007257433A JP 2009088328 A JP2009088328 A JP 2009088328A
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- power supply
- wiring
- well
- output buffer
- gnd
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 239000000872 buffer Substances 0.000 claims abstract description 108
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000007257 malfunction Effects 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 18
- 230000000694 effects Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 102100036285 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Human genes 0.000 description 1
- 101000875403 Homo sapiens 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Proteins 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Abstract
【解決手段】 出力バッファトランジスタ103のソース電極と、上記出力バッファトランジスタが形成されるウェルには、同じ電源204から電圧が供給されるが配線経路を分離して別配線で電源を供給する。出力バッファトランジスタ103のスイッチングによって、ソース電極の電位が変動してもウェルの電位変動が抑えられる。特に、おなじウェルに形成された出力バッファトランジスタ以外のトランジスタや、半導体基板を経由して電気的に接続された他のウェルに形成されたトランジスタへのノイズの影響を防ぐことができる。
【選択図】 図10
Description
102 PチャンネルMOSバッファトランジスタ
103 NチャンネルMOSバッファトランジスタ
104 入出力パッド
105 内部コア
106、107 制御信号
201 半導体チップ
202 GND配線C
204 GNDパッド
206 GND配線B
207 GND配線A
208 出力バッファ回路
209 内部コア領域
301 P型半導体基板
302、304、306 Pウェル
401 P+TAP
501 半導体チップ
503 GND配線D
505 GND電源パッド
508 出力バッファ回路
Claims (8)
- 半導体基板と、前記半導体基板に形成されたウェルと、前記ウェル内に形成された複数の出力バッファトランジスタと、前記複数の出力バッファトランジスタにそれぞれ対応して設けられた複数のウェルタップと、前記複数の出力バッファのソース電極に共通に接続された第1の電源配線と、前記第1の電源配線とは配線経路の異なる別の電源配線であって前記複数のウェルタップに共通に接続された第2の電源配線とを備え、前記第1及び第2の電源配線は、同一の電源に接続されることを特徴とする半導体集積回路。
- 前記半導体基板の上には、前記出力バッファトランジスタ以外のトランジスタが形成され、そのトランジスタの少なくとも一部は、前記出力バッファジスタが形成されたウェルと同一のウェルまたは、前記出力バッファトランジスタが形成されたウェルと前記半導体基板を介して電気的に接続された別なウェルに形成されたことを特徴とする請求項1記載の半導体集積回路。
- 前記半導体基板と前記ウェルとは同一導電型であることを特徴とする請求項1または2記載の半導体集積回路。
- 前記半導体基板の上に設けられた内部コア領域をさらに備え、前記第1の電源配線、第2の電源配線は、それぞれ前記内部コア領域を囲んで周回するように配線されていることを特徴とする請求項1ないし3いずれか1項記載の半導体集積回路。
- 前記第1の電源配線と前記第2の電源配線は、相互インダクタンス及びカップリング容量が十分小さくなるように離間して配線されていることを特徴とする請求項1ないし4いずれか1項記載の半導体集積回路。
- 前記第2の電源配線に接続されたノイズフィルタを有する請求項1ないし5いずれか1項記載の半導体集積回路。
- 前記第1の電源配線が接続される第1の電源パッドと、前記第2の電源配線が接続される第2の電源パッドとが前記半導体基板上に形成され、前記第1の電源パッドと第2の電源パッドとは前記半導体基板の外で接続されていることを特徴とする請求項1ないし6いずれか1項記載の半導体集積回路。
- 前記第1の電源配線と第2の電源配線が共通に接続された電源パッドを備え、前記第1の電源配線、第2の電源配線は、前記電源パッドから枝分かれをした配線であることを特徴とする請求項1ないし6いずれか1項記載の半導体集積回路。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007257433A JP2009088328A (ja) | 2007-10-01 | 2007-10-01 | 半導体集積回路 |
US12/285,088 US20090085068A1 (en) | 2007-10-01 | 2008-09-29 | Semiconductor integrated circuit having output buffer circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007257433A JP2009088328A (ja) | 2007-10-01 | 2007-10-01 | 半導体集積回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009088328A true JP2009088328A (ja) | 2009-04-23 |
Family
ID=40507166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007257433A Pending JP2009088328A (ja) | 2007-10-01 | 2007-10-01 | 半導体集積回路 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20090085068A1 (ja) |
JP (1) | JP2009088328A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8895327B1 (en) | 2011-12-09 | 2014-11-25 | Suvolta, Inc. | Tipless transistors, short-tip transistors, and methods and circuits therefor |
US9627529B1 (en) * | 2015-05-21 | 2017-04-18 | Altera Corporation | Well-tap structures for analog matching transistor arrays |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01220468A (ja) * | 1988-02-29 | 1989-09-04 | Hitachi Ltd | 半導体集積回路装置 |
JPH03156965A (ja) * | 1989-11-15 | 1991-07-04 | Fujitsu Ltd | 半導体集積回路装置 |
JPH05259392A (ja) * | 1991-11-21 | 1993-10-08 | Nec Corp | 半導体集積回路装置 |
JP2005196406A (ja) * | 2004-01-06 | 2005-07-21 | Matsushita Electric Ind Co Ltd | 電源ノイズを抑えた半導体集積回路の設計方法 |
JP2006196875A (ja) * | 2004-12-16 | 2006-07-27 | Canon Inc | 半導体装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4924293A (en) * | 1985-05-24 | 1990-05-08 | Hitachi, Ltd. | Semiconductor integrated circuit device |
JPS63234623A (ja) * | 1987-03-23 | 1988-09-29 | Toshiba Corp | 半導体集積回路 |
JP2619119B2 (ja) * | 1990-06-21 | 1997-06-11 | 株式会社東芝 | 半導体集積回路 |
US6359489B1 (en) * | 2000-10-05 | 2002-03-19 | Silicon Integrated Systems Corp. | Clock signal generation and buffer circuit having high noise immunity and low power consumption |
US7076124B2 (en) * | 2002-12-20 | 2006-07-11 | Avago Technologies, Ltd. | Integrated multichannel laser driver and photodetector receiver |
US6937055B2 (en) * | 2002-12-23 | 2005-08-30 | Mosaic Systems, Inc. | Programmable I/O buffer |
JP3901671B2 (ja) * | 2003-08-19 | 2007-04-04 | 松下電器産業株式会社 | 半導体集積回路装置 |
KR100725361B1 (ko) * | 2005-02-24 | 2007-06-07 | 삼성전자주식회사 | 이에스디 보호 소자 및 파워 클램프를 구비하는 멀티 파워블록형 집적 회로 장치 |
-
2007
- 2007-10-01 JP JP2007257433A patent/JP2009088328A/ja active Pending
-
2008
- 2008-09-29 US US12/285,088 patent/US20090085068A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01220468A (ja) * | 1988-02-29 | 1989-09-04 | Hitachi Ltd | 半導体集積回路装置 |
JPH03156965A (ja) * | 1989-11-15 | 1991-07-04 | Fujitsu Ltd | 半導体集積回路装置 |
JPH05259392A (ja) * | 1991-11-21 | 1993-10-08 | Nec Corp | 半導体集積回路装置 |
JP2005196406A (ja) * | 2004-01-06 | 2005-07-21 | Matsushita Electric Ind Co Ltd | 電源ノイズを抑えた半導体集積回路の設計方法 |
JP2006196875A (ja) * | 2004-12-16 | 2006-07-27 | Canon Inc | 半導体装置 |
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US20090085068A1 (en) | 2009-04-02 |
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