KR910010742A - 반도체 집적회로장치 - Google Patents

반도체 집적회로장치 Download PDF

Info

Publication number
KR910010742A
KR910010742A KR1019900018102A KR900018102A KR910010742A KR 910010742 A KR910010742 A KR 910010742A KR 1019900018102 A KR1019900018102 A KR 1019900018102A KR 900018102 A KR900018102 A KR 900018102A KR 910010742 A KR910010742 A KR 910010742A
Authority
KR
South Korea
Prior art keywords
layer
integrated circuit
circuit device
semiconductor integrated
polyside
Prior art date
Application number
KR1019900018102A
Other languages
English (en)
Other versions
KR940009356B1 (ko
Inventor
히로유키 나카자와
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910010742A publication Critical patent/KR910010742A/ko
Application granted granted Critical
Publication of KR940009356B1 publication Critical patent/KR940009356B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음

Description

반도체 집적회로장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 반도체 집적회로장치의 실시예를 나타낸 단면도.

Claims (1)

  1. 동일 반도체기판(1)상에 집적된 바이폴라 트랜지스터(104,304)와 MOS형 전계효과 트랜지스터(101,102,301,302) 및 CCD소자 (103,303)를 구비하고, 또 바이폴라 트랜지스터의 에미터전극(12b,32a)과 MOS형 전계효과 트랜지스터의 게이트전극(8a,32a) 및 CCD의 게이트전극(12a,32a)중 적어도 1개의 게이트전극이 실리사이드층과 폴리사이드층중 어느 하나의 층이나, 폴리실리콘층과 실리사이드층 및 폴리사이드층중 어느하나의 층과 고융점 금속층의 적층으로 이루어진 것을 특징으로 하는 반도체 집적회로장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900018102A 1989-11-09 1990-11-09 반도체 집적회로장치 KR940009356B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1291714A JPH03152939A (ja) 1989-11-09 1989-11-09 半導体集積回路装置
JP1-291714 1989-11-09

Publications (2)

Publication Number Publication Date
KR910010742A true KR910010742A (ko) 1991-06-29
KR940009356B1 KR940009356B1 (ko) 1994-10-07

Family

ID=17772448

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900018102A KR940009356B1 (ko) 1989-11-09 1990-11-09 반도체 집적회로장치

Country Status (3)

Country Link
EP (1) EP0427253A3 (ko)
JP (1) JPH03152939A (ko)
KR (1) KR940009356B1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770703B2 (ja) * 1989-05-22 1995-07-31 株式会社東芝 電荷転送デバイスを含む半導体装置およびその製造方法
GB9207472D0 (en) * 1992-04-06 1992-05-20 Phoenix Vlsi Consultants Ltd High performance process technology
JP2008177620A (ja) * 2008-04-11 2008-07-31 Fujifilm Corp 固体撮像装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4253168A (en) * 1978-10-23 1981-02-24 Westinghouse Electric Corp. CCD Signal processor
CA1151295A (en) * 1979-07-31 1983-08-02 Alan Aitken Dual resistivity mos devices and method of fabrication
EP0193934B1 (en) * 1985-03-07 1993-07-21 Kabushiki Kaisha Toshiba Semiconductor integreated circuit device and method of manufacturing the same
JPS63161A (ja) * 1986-06-19 1988-01-05 Toshiba Corp 電荷結合装置の出力回路
ATE94688T1 (de) * 1986-07-04 1993-10-15 Siemens Ag Integrierte bipolar- und komplementaere mostransistoren auf einem gemeinsamen substrat enthaltende schaltung und verfahren zu ihrer herstellung.
JPH01130568A (ja) * 1987-11-17 1989-05-23 Texas Instr Japan Ltd 電荷結合素子

Also Published As

Publication number Publication date
EP0427253A3 (en) 1991-09-11
EP0427253A2 (en) 1991-05-15
JPH03152939A (ja) 1991-06-28
KR940009356B1 (ko) 1994-10-07

Similar Documents

Publication Publication Date Title
KR850000804A (ko) 반도체 장치
KR860002153A (ko) 반도체 장치
KR910010728A (ko) 복합형 직접회로소자
KR910005448A (ko) 반도체 집적회로
KR830006822A (ko) 반도체집적회로장치
KR960030394A (ko) 정전보호기능을 갖는 반도체 집적 회로 장치
KR910007159A (ko) Mos형 반도체장치
KR900013658A (ko) Bi-CMOS반도체장치
KR910010742A (ko) 반도체 집적회로장치
KR910017623A (ko) 반도체 장치
KR900015311A (ko) 반도체장치 및 그 제조방법
KR880009448A (ko) 반도체 집적회로 장치
JPH06151744A (ja) 半導体入出力保護装置
KR920000146A (ko) 고전압 직접회로
KR850007315A (ko) 상보형(相補形) 금속산화막 반도체 직접회로 장치
KR970053847A (ko) 반도체 장치용 정전기 방지회로 및 그 제조방법
KR920022535A (ko) 반도체 집적 회로
KR960006088A (ko) 정전방전(esd) 보호 트랜지스터
KR890008966A (ko) 반도체장치의 배선접속부
KR930003365A (ko) 반도체 집적회로 장치
KR980006479A (ko) 반도체 소자
KR970008561A (ko) 반도체장치의 입력보호 회로의 트랜지스터
KR910010711A (ko) 집적 회로 장치
KR840009182A (ko) 반도체 장치
JP3124310B2 (ja) 縦型ｍｏｓ電界効果トランジスタ

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20030930

Year of fee payment: 10

LAPS Lapse due to unpaid annual fee