KR910010742A - 반도체 집적회로장치 - Google Patents

반도체 집적회로장치 Download PDF

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Publication number
KR910010742A
KR910010742A KR1019900018102A KR900018102A KR910010742A KR 910010742 A KR910010742 A KR 910010742A KR 1019900018102 A KR1019900018102 A KR 1019900018102A KR 900018102 A KR900018102 A KR 900018102A KR 910010742 A KR910010742 A KR 910010742A
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KR
South Korea
Prior art keywords
layer
integrated circuit
circuit device
semiconductor integrated
polyside
Prior art date
Application number
KR1019900018102A
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English (en)
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KR940009356B1 (ko
Inventor
히로유키 나카자와
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910010742A publication Critical patent/KR910010742A/ko
Application granted granted Critical
Publication of KR940009356B1 publication Critical patent/KR940009356B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

내용 없음

Description

반도체 집적회로장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 반도체 집적회로장치의 실시예를 나타낸 단면도.

Claims (1)

  1. 동일 반도체기판(1)상에 집적된 바이폴라 트랜지스터(104,304)와 MOS형 전계효과 트랜지스터(101,102,301,302) 및 CCD소자 (103,303)를 구비하고, 또 바이폴라 트랜지스터의 에미터전극(12b,32a)과 MOS형 전계효과 트랜지스터의 게이트전극(8a,32a) 및 CCD의 게이트전극(12a,32a)중 적어도 1개의 게이트전극이 실리사이드층과 폴리사이드층중 어느 하나의 층이나, 폴리실리콘층과 실리사이드층 및 폴리사이드층중 어느하나의 층과 고융점 금속층의 적층으로 이루어진 것을 특징으로 하는 반도체 집적회로장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900018102A 1989-11-09 1990-11-09 반도체 집적회로장치 KR940009356B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-291714 1989-11-09
JP1291714A JPH03152939A (ja) 1989-11-09 1989-11-09 半導体集積回路装置

Publications (2)

Publication Number Publication Date
KR910010742A true KR910010742A (ko) 1991-06-29
KR940009356B1 KR940009356B1 (ko) 1994-10-07

Family

ID=17772448

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900018102A KR940009356B1 (ko) 1989-11-09 1990-11-09 반도체 집적회로장치

Country Status (3)

Country Link
EP (1) EP0427253A3 (ko)
JP (1) JPH03152939A (ko)
KR (1) KR940009356B1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770703B2 (ja) * 1989-05-22 1995-07-31 株式会社東芝 電荷転送デバイスを含む半導体装置およびその製造方法
GB9207472D0 (en) * 1992-04-06 1992-05-20 Phoenix Vlsi Consultants Ltd High performance process technology
JP2008177620A (ja) * 2008-04-11 2008-07-31 Fujifilm Corp 固体撮像装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4253168A (en) * 1978-10-23 1981-02-24 Westinghouse Electric Corp. CCD Signal processor
CA1151295A (en) * 1979-07-31 1983-08-02 Alan Aitken Dual resistivity mos devices and method of fabrication
DE3688711T2 (de) * 1985-03-07 1993-12-16 Toshiba Kawasaki Kk Integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung.
JPS63161A (ja) * 1986-06-19 1988-01-05 Toshiba Corp 電荷結合装置の出力回路
DE3787407D1 (de) * 1986-07-04 1993-10-21 Siemens Ag Integrierte Bipolar- und komplementäre MOS-Transistoren auf einem gemeinsamen Substrat enthaltende Schaltung und Verfahren zu ihrer Herstellung.
JPH01130568A (ja) * 1987-11-17 1989-05-23 Texas Instr Japan Ltd 電荷結合素子

Also Published As

Publication number Publication date
EP0427253A3 (en) 1991-09-11
JPH03152939A (ja) 1991-06-28
KR940009356B1 (ko) 1994-10-07
EP0427253A2 (en) 1991-05-15

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