KR900001009A - 반도체집적회로 - Google Patents

반도체집적회로 Download PDF

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Publication number
KR900001009A
KR900001009A KR1019890009309A KR890009309A KR900001009A KR 900001009 A KR900001009 A KR 900001009A KR 1019890009309 A KR1019890009309 A KR 1019890009309A KR 890009309 A KR890009309 A KR 890009309A KR 900001009 A KR900001009 A KR 900001009A
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KR
South Korea
Prior art keywords
divided
electrode
electrodes
gate
source
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KR1019890009309A
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English (en)
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KR920006062B1 (ko
Inventor
노부오 고이데
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
다케다이 마사다카
도시바 마이크로 일렉트로닉스 가부시키가이샤
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Application filed by 아오이 죠이치, 가부시키가이샤 도시바, 다케다이 마사다카, 도시바 마이크로 일렉트로닉스 가부시키가이샤 filed Critical 아오이 죠이치
Publication of KR900001009A publication Critical patent/KR900001009A/ko
Application granted granted Critical
Publication of KR920006062B1 publication Critical patent/KR920006062B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Amplifiers (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

내용 없음.

Description

반도체집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 반도체집적회로의 회로도,
제2도는 상기 제1도의 집적회로에 포함된 차동소오스결합 전계효과트랜지스터회로의 제1실시예를 나타낸 전극 및 배선전극의 패턴,
제3도는 제2도에 나타낸 회로의 드레인배선(LDl)을 절단선으로 할 때의 부분단면도,

Claims (2)

  1. 동수의 동일한 폭으로 분할된 게이트전극(△Gl, △G2)과, 동수의 동일한 폭으로 분할된 드레인전극(△Dl, △D2), 동일한 폭으로 분할된 공통소오스전극(△S)을 갖추고 있고 ; 상기 분할된 게이트전극(△Gl, △G2) 및 분할된 드레인전극(△Dl, △D2)이 각각 상기 분할된 공통 소오스전극(△S)의 폭방향의 중심선에 대칭되면서 폭방향으로 상기 분할된 공통 소오스전극(△S)의 양측에 분할된 게이트전극(△Gl, △G2), 분할된 드레인전극(△Dl, △D2)의 순서로 병렬배치되어 있는 소오스전극(S)이 공통으로 상호간에 정합된 한쌍의 MESFET(또는 MOSFET ; Qlb, Q2b)로 이루어진 차동소오스결합 전계효과트랜지스터회로를 구비하여 구성된 것을 특징으로 하는 반도체집적회로,
  2. 제1항에 있어서, 상기 한쌍의 MESFET(또는 MOSFET ; Qlb, Q2b)가 상기 병렬배치된 전극의 한쪽과 분할된 게이트전극(△Gl)의 각 한쪽의 끝부분을 상호간에 전기접속시키는 게이트배선전극(LGl)과 ; 상기 병렬배치전극의 다른쪽과 분할된 게이트전극(△G2) 및 소오스전극(△S)의 각 끝부분을 상호간에 전기접속시키는 게이트단자(TG2) 및 소오스단자(TS)의 각각을 포함하는 게이트배선전극(LG2) 및 소오스배선전극(LS) ; 상기 병렬배치전극중에서 가장 바깥쪽의 게이트전극(△Gl)의 다른쪽의 끝부분으로부터 연결되어 있으면서 게이트단자(TGl)를 포함하는 게이트배선전극(LGl) ; 상기 병렬배치전극상에 층간절연막을 매개로 이 층간절연막의 접속구멍을 통해서 분할된 드레인 전극(△Dl, △D2)의 각각의 중간부를 상호간에 전기접속시키는 드레인단자(TDl, TD2)를 포함하는 드레인배선전극(LDl, LD2)을 갖추고 있는 소오스전극(S)이 공통으로 상호간에 정합된 한쌍의 MESFET(또는 MOSFET ; Qlb, Q2b)로 이루어진 차동소오스결합 전계효과트랜지스터회로를 구비하여 구성된 것을 특징으로 하는 반도체집적회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890009309A 1988-06-30 1989-06-30 반도체집적회로 KR920006062B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP88-163286 1988-06-30
JP63163286A JPH088264B2 (ja) 1988-06-30 1988-06-30 半導体集積回路
JP63-163286 1988-06-30

Publications (2)

Publication Number Publication Date
KR900001009A true KR900001009A (ko) 1990-01-31
KR920006062B1 KR920006062B1 (ko) 1992-07-27

Family

ID=15770932

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890009309A KR920006062B1 (ko) 1988-06-30 1989-06-30 반도체집적회로

Country Status (5)

Country Link
US (1) US5006816A (ko)
EP (1) EP0348998B1 (ko)
JP (1) JPH088264B2 (ko)
KR (1) KR920006062B1 (ko)
DE (1) DE68920491T2 (ko)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2850500B2 (ja) * 1990-07-16 1999-01-27 日本電気株式会社 Ｍｏｓｆｅｔ集積回路装置
JP2557561B2 (ja) * 1990-10-09 1996-11-27 三菱電機株式会社 半導体装置
JPH04298052A (ja) * 1991-03-27 1992-10-21 Toshiba Corp 半導体装置
JP2758531B2 (ja) * 1992-04-22 1998-05-28 三菱電機株式会社 半導体装置
US5519344A (en) * 1994-06-30 1996-05-21 Proebsting; Robert J. Fast propagation technique in CMOS integrated circuits
US5926050A (en) * 1996-07-29 1999-07-20 Townsend And Townsend And Crew Llp Separate set/reset paths for time critical signals
JP3346193B2 (ja) * 1996-11-18 2002-11-18 松下電器産業株式会社 電力増幅器
JP3318928B2 (ja) * 1999-04-12 2002-08-26 日本電気株式会社 半導体装置
US6366168B1 (en) * 2000-03-20 2002-04-02 Marvell International Ltd. Efficient ground noise and common-mode suppression network
TW579576B (en) * 2001-10-24 2004-03-11 Sanyo Electric Co Semiconductor circuit
TWI221656B (en) * 2001-10-24 2004-10-01 Sanyo Electric Co Semiconductor integrated circuit device
JP2004031407A (ja) * 2002-06-21 2004-01-29 Nec Corp 半導体集積回路とその設計方法及び設計装置
JP2004040447A (ja) * 2002-07-03 2004-02-05 Toyota Industries Corp Ａｇｃ回路
EP1420450A3 (en) * 2002-11-15 2006-12-13 Matsushita Electric Industrial Co., Ltd. Semiconductor differential circuit with transistors having a virtual ground
JP4719412B2 (ja) * 2002-11-15 2011-07-06 パナソニック株式会社 半導体差動回路、それを用いた発振装置、増幅装置、スイッチ装置、ミキサ装置、回路装置、半導体差動回路の配置方法
KR100554850B1 (ko) * 2004-03-02 2006-02-24 삼성전자주식회사 선형 데시벨 전달 컨덕턴스를 갖는 가변이득 증폭기
JP4800084B2 (ja) * 2006-03-31 2011-10-26 住友電工デバイス・イノベーション株式会社 半導体装置およびその製造方法
US20080157222A1 (en) * 2006-12-27 2008-07-03 Mediatek Inc. Rf integrated circuit device
WO2008155084A1 (de) * 2007-06-18 2008-12-24 Microgan Gmbh Stromspiegel mit selbstleitendem transistor
JP4743190B2 (ja) * 2007-10-22 2011-08-10 コベルコ建機株式会社 建設機械のバルブ操作装置
JP5699826B2 (ja) * 2011-06-27 2015-04-15 富士通セミコンダクター株式会社 レイアウト方法及び半導体装置の製造方法
FR2994506B1 (fr) * 2012-08-13 2015-11-27 Soitec Silicon On Insulator Adaptation de transistors
US11529917B2 (en) 2020-04-29 2022-12-20 Lear Corporation Switch arrangement and method for controlling a switch arrangement

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US4084173A (en) * 1976-07-23 1978-04-11 Texas Instruments Incorporated Interdigitated transistor pair
JPH0669100B2 (ja) * 1983-10-28 1994-08-31 ヒューズ・エアクラフト・カンパニー マルチ・ゲート電界効果トランジスタ
JPS6269684A (ja) * 1985-09-24 1987-03-30 Matsushita Electronics Corp 半導体集積回路
JPS63105507A (ja) * 1986-10-23 1988-05-10 Oki Electric Ind Co Ltd 差動増幅器

Also Published As

Publication number Publication date
JPH0212929A (ja) 1990-01-17
JPH088264B2 (ja) 1996-01-29
DE68920491D1 (de) 1995-02-23
US5006816A (en) 1991-04-09
EP0348998A1 (en) 1990-01-03
KR920006062B1 (ko) 1992-07-27
EP0348998B1 (en) 1995-01-11
DE68920491T2 (de) 1995-06-22

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