DE68920491D1 - Integrierte Halbleiterschaltung, bestehend aus einer Differenztransistorschaltung mit einem Paar von FETs. - Google Patents

Integrierte Halbleiterschaltung, bestehend aus einer Differenztransistorschaltung mit einem Paar von FETs.

Info

Publication number
DE68920491D1
DE68920491D1 DE68920491T DE68920491T DE68920491D1 DE 68920491 D1 DE68920491 D1 DE 68920491D1 DE 68920491 T DE68920491 T DE 68920491T DE 68920491 T DE68920491 T DE 68920491T DE 68920491 D1 DE68920491 D1 DE 68920491D1
Authority
DE
Germany
Prior art keywords
fets
pair
integrated semiconductor
differential transistor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68920491T
Other languages
English (en)
Other versions
DE68920491T2 (de
Inventor
Nobuo C O Intellectual P Koide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Publication of DE68920491D1 publication Critical patent/DE68920491D1/de
Application granted granted Critical
Publication of DE68920491T2 publication Critical patent/DE68920491T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Amplifiers (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE68920491T 1988-06-30 1989-06-30 Integrierte Halbleiterschaltung, bestehend aus einer Differenztransistorschaltung mit einem Paar von FETs. Expired - Fee Related DE68920491T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63163286A JPH088264B2 (ja) 1988-06-30 1988-06-30 半導体集積回路

Publications (2)

Publication Number Publication Date
DE68920491D1 true DE68920491D1 (de) 1995-02-23
DE68920491T2 DE68920491T2 (de) 1995-06-22

Family

ID=15770932

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68920491T Expired - Fee Related DE68920491T2 (de) 1988-06-30 1989-06-30 Integrierte Halbleiterschaltung, bestehend aus einer Differenztransistorschaltung mit einem Paar von FETs.

Country Status (5)

Country Link
US (1) US5006816A (de)
EP (1) EP0348998B1 (de)
JP (1) JPH088264B2 (de)
KR (1) KR920006062B1 (de)
DE (1) DE68920491T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2850500B2 (ja) * 1990-07-16 1999-01-27 日本電気株式会社 Ｍｏｓｆｅｔ集積回路装置
JP2557561B2 (ja) * 1990-10-09 1996-11-27 三菱電機株式会社 半導体装置
JPH04298052A (ja) * 1991-03-27 1992-10-21 Toshiba Corp 半導体装置
JP2758531B2 (ja) * 1992-04-22 1998-05-28 三菱電機株式会社 半導体装置
US5519344A (en) * 1994-06-30 1996-05-21 Proebsting; Robert J. Fast propagation technique in CMOS integrated circuits
US5926050A (en) * 1996-07-29 1999-07-20 Townsend And Townsend And Crew Llp Separate set/reset paths for time critical signals
JP3346193B2 (ja) * 1996-11-18 2002-11-18 松下電器産業株式会社 電力増幅器
JP3318928B2 (ja) * 1999-04-12 2002-08-26 日本電気株式会社 半導体装置
US6366168B1 (en) * 2000-03-20 2002-04-02 Marvell International Ltd. Efficient ground noise and common-mode suppression network
TW579576B (en) * 2001-10-24 2004-03-11 Sanyo Electric Co Semiconductor circuit
TWI221656B (en) * 2001-10-24 2004-10-01 Sanyo Electric Co Semiconductor integrated circuit device
JP2004031407A (ja) * 2002-06-21 2004-01-29 Nec Corp 半導体集積回路とその設計方法及び設計装置
JP2004040447A (ja) * 2002-07-03 2004-02-05 Toyota Industries Corp Ａｇｃ回路
EP1420450A3 (de) * 2002-11-15 2006-12-13 Matsushita Electric Industrial Co., Ltd. Differentielle Halbleiterschaltung mit Transistoren, welche eine virtuelle Erdverbindung aufweisen
JP4719412B2 (ja) * 2002-11-15 2011-07-06 パナソニック株式会社 半導体差動回路、それを用いた発振装置、増幅装置、スイッチ装置、ミキサ装置、回路装置、半導体差動回路の配置方法
KR100554850B1 (ko) * 2004-03-02 2006-02-24 삼성전자주식회사 선형 데시벨 전달 컨덕턴스를 갖는 가변이득 증폭기
JP4800084B2 (ja) * 2006-03-31 2011-10-26 住友電工デバイス・イノベーション株式会社 半導体装置およびその製造方法
US20080157222A1 (en) * 2006-12-27 2008-07-03 Mediatek Inc. Rf integrated circuit device
WO2008155084A1 (de) * 2007-06-18 2008-12-24 Microgan Gmbh Stromspiegel mit selbstleitendem transistor
JP4743190B2 (ja) * 2007-10-22 2011-08-10 コベルコ建機株式会社 建設機械のバルブ操作装置
JP5699826B2 (ja) * 2011-06-27 2015-04-15 富士通セミコンダクター株式会社 レイアウト方法及び半導体装置の製造方法
FR2994506B1 (fr) * 2012-08-13 2015-11-27 Soitec Silicon On Insulator Adaptation de transistors
US11529917B2 (en) 2020-04-29 2022-12-20 Lear Corporation Switch arrangement and method for controlling a switch arrangement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4084173A (en) * 1976-07-23 1978-04-11 Texas Instruments Incorporated Interdigitated transistor pair
JPH0669100B2 (ja) * 1983-10-28 1994-08-31 ヒューズ・エアクラフト・カンパニー マルチ・ゲート電界効果トランジスタ
JPS6269684A (ja) * 1985-09-24 1987-03-30 Matsushita Electronics Corp 半導体集積回路
JPS63105507A (ja) * 1986-10-23 1988-05-10 Oki Electric Ind Co Ltd 差動増幅器

Also Published As

Publication number Publication date
JPH0212929A (ja) 1990-01-17
JPH088264B2 (ja) 1996-01-29
US5006816A (en) 1991-04-09
KR900001009A (ko) 1990-01-31
EP0348998A1 (de) 1990-01-03
KR920006062B1 (ko) 1992-07-27
EP0348998B1 (de) 1995-01-11
DE68920491T2 (de) 1995-06-22

Similar Documents

Publication Publication Date Title
DE68920491D1 (de) Integrierte Halbleiterschaltung, bestehend aus einer Differenztransistorschaltung mit einem Paar von FETs.
DE3884058D1 (de) Hochspannungshalbleiter mit integrierter Niederspannungsschaltung.
DE3482078D1 (de) Halbleiteranordnung mit erhoehter durchbruchspannung.
DE3688088D1 (de) Integrierte halbleiterschaltung.
DE58906492D1 (de) Halbleiterschaltung.
DE3484313D1 (de) Integrierte halbleiterschaltung.
DE3578273D1 (de) Verdrahtungslagen in halbleiterbauelementen.
DE3853814D1 (de) Integrierte Halbleiterschaltung.
DE3889650D1 (de) Integrierte Halbleiterschaltung mit einem Eingangsspannungsbegrenzer.
DE3482014D1 (de) Integrierte halbleiterschaltungsanordnung mit verbindungsmaterial.
DE68921088D1 (de) Integrierte Halbleiterschaltung.
DE3685071D1 (de) Integrierte halbleiterschaltung.
DE3686498D1 (de) Integrierte halbleiterschaltung mit lasttreibereigenschaften.
DE3885532D1 (de) Halbleiter-Speicherschaltung mit einer Verzögerungsschaltung.
DE3680774D1 (de) Integriertes halbleiterbauelement.
DE3584680D1 (de) Ecl-kompatible elementare logische schaltung aus gallium-arsenid-transistoren hergestellt.
DE3685759D1 (de) Integrierte halbleiterschaltung.
DE3576612D1 (de) Halbleiteranordnung mit mos-transistoren.
DE69020316D1 (de) MOS-Schaltkreis mit einem Gate-optimierten lateralen bipolaren Transistor.
DE68918164D1 (de) Integrierte Halbleiterschaltung mit einem CMOS-Inverter.
DE3579182D1 (de) Halbleiteranordnung mit einem treiberschaltungselement und einem ausgangstransistor.
DE3684364D1 (de) Integrierte halbleiterschaltung.
DE3768881D1 (de) Integrierte schaltungen mit stufenfoermigen dielektrikum.
DE3677165D1 (de) Integrierte halbleiterschaltungsanordnung.
DE3673605D1 (de) In einer integrierten halbleiterschaltung angewandtes halbleiterwiderstandselement.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee