DE3768881D1 - Integrierte schaltungen mit stufenfoermigen dielektrikum. - Google Patents

Integrierte schaltungen mit stufenfoermigen dielektrikum.

Info

Publication number
DE3768881D1
DE3768881D1 DE8787307579T DE3768881T DE3768881D1 DE 3768881 D1 DE3768881 D1 DE 3768881D1 DE 8787307579 T DE8787307579 T DE 8787307579T DE 3768881 T DE3768881 T DE 3768881T DE 3768881 D1 DE3768881 D1 DE 3768881D1
Authority
DE
Germany
Prior art keywords
integrated circuits
stepped dielectric
stepped
dielectric
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787307579T
Other languages
English (en)
Inventor
Kuo-Hua Lee
Samuel Efrain Polanco
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of DE3768881D1 publication Critical patent/DE3768881D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
DE8787307579T 1986-09-04 1987-08-27 Integrierte schaltungen mit stufenfoermigen dielektrikum. Expired - Fee Related DE3768881D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/903,920 US4676869A (en) 1986-09-04 1986-09-04 Integrated circuits having stepped dielectric regions

Publications (1)

Publication Number Publication Date
DE3768881D1 true DE3768881D1 (de) 1991-05-02

Family

ID=25418254

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787307579T Expired - Fee Related DE3768881D1 (de) 1986-09-04 1987-08-27 Integrierte schaltungen mit stufenfoermigen dielektrikum.

Country Status (8)

Country Link
US (1) US4676869A (de)
EP (1) EP0259098B1 (de)
JP (1) JPS63107119A (de)
CA (1) CA1258141A (de)
DE (1) DE3768881D1 (de)
ES (1) ES2021366B3 (de)
HK (1) HK44092A (de)
SG (1) SG102291G (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4719498A (en) * 1984-05-18 1988-01-12 Fujitsu Limited Optoelectronic integrated circuit
EP0263220B1 (de) * 1986-10-08 1992-09-09 International Business Machines Corporation Verfahren zur Herstellung einer Kontaktöffnung mit gewünschter Schräge in einer zusammengesetzten Schicht, die mit Photoresist maskiert ist
FR2610140B1 (fr) * 1987-01-26 1990-04-20 Commissariat Energie Atomique Circuit integre cmos et procede de fabrication de ses zones d'isolation electrique
US4952274A (en) * 1988-05-27 1990-08-28 Northern Telecom Limited Method for planarizing an insulating layer
US4926056A (en) * 1988-06-10 1990-05-15 Sri International Microelectronic field ionizer and method of fabricating the same
EP0375255A3 (de) * 1988-12-21 1991-09-04 AT&T Corp. Verfahren zur Herabsetzung der Verunreinigung durch bewegliche Ionen in integrierten Halbleiterschaltungen
KR970000198B1 (en) * 1993-05-26 1997-01-06 Hyundai Electronics Ind Process for anisotropically etching semiconductor material
US5439847A (en) * 1993-11-05 1995-08-08 At&T Corp. Integrated circuit fabrication with a raised feature as mask
JPH09511622A (ja) * 1994-11-07 1997-11-18 マクロニクス インターナショナル カンパニー リミテッド 集積回路表面保護方法および構造
JPH09153545A (ja) * 1995-09-29 1997-06-10 Toshiba Corp 半導体装置及びその製造方法
US6046100A (en) * 1996-12-12 2000-04-04 Applied Materials, Inc. Method of fabricating a fabricating plug and near-zero overlap interconnect line
US6204182B1 (en) 1998-03-02 2001-03-20 Hewlett-Packard Company In-situ fluid jet orifice
US20010041461A1 (en) * 1998-10-06 2001-11-15 Rodney S. Ridley Process for forming high voltage junction termination extension oxide
US6117781A (en) * 1999-04-22 2000-09-12 Advanced Micro Devices, Inc. Optimized trench/via profile for damascene processing
KR100500439B1 (ko) * 2002-08-14 2005-07-12 삼성전자주식회사 게이트 스페이서가 포지티브 슬로프를 갖는 반도체 장치의 제조방법
CN102157374A (zh) * 2011-01-28 2011-08-17 上海宏力半导体制造有限公司 梯形场氧化层的制作方法
JP6289738B2 (ja) * 2015-03-26 2018-03-07 三菱電機株式会社 半導体装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3880684A (en) * 1973-08-03 1975-04-29 Mitsubishi Electric Corp Process for preparing semiconductor
US4181564A (en) * 1978-04-24 1980-01-01 Bell Telephone Laboratories, Incorporated Fabrication of patterned silicon nitride insulating layers having gently sloping sidewalls
JPS5540180A (en) * 1978-09-15 1980-03-21 Matsushita Electric Works Ltd Installing device of push button
JPS55134935A (en) * 1979-04-09 1980-10-21 Nec Corp Preparation of semiconductor element
JPS56100420A (en) * 1980-01-17 1981-08-12 Toshiba Corp Plasma etching method for oxidized silicon film
JPS5789243A (en) * 1980-11-26 1982-06-03 Seiko Epson Corp Fabrication of semiconductor device
JPS57157546A (en) * 1981-03-24 1982-09-29 Nec Corp Manufacture of semiconductor device
US4372034B1 (en) * 1981-03-26 1998-07-21 Intel Corp Process for forming contact openings through oxide layers
US4461672A (en) * 1982-11-18 1984-07-24 Texas Instruments, Inc. Process for etching tapered vias in silicon dioxide
JPS59130426A (ja) * 1983-01-17 1984-07-27 Toshiba Corp 半導体装置の製造方法
JPS6010644A (ja) * 1983-06-30 1985-01-19 Toshiba Corp 半導体装置の製造方法
US4505026A (en) * 1983-07-14 1985-03-19 Intel Corporation CMOS Process for fabricating integrated circuits, particularly dynamic memory cells
US4484978A (en) * 1983-09-23 1984-11-27 Fairchild Camera & Instrument Corp. Etching method
JPS60153131A (ja) * 1984-01-23 1985-08-12 Oki Electric Ind Co Ltd 半導体素子の製造方法
US4484979A (en) * 1984-04-16 1984-11-27 At&T Bell Laboratories Two-step anisotropic etching process for patterning a layer without penetrating through an underlying thinner layer
US4631248A (en) * 1985-06-21 1986-12-23 Lsi Logic Corporation Method for forming an electrical contact in an integrated circuit

Also Published As

Publication number Publication date
US4676869A (en) 1987-06-30
EP0259098B1 (de) 1991-03-27
HK44092A (en) 1992-06-26
EP0259098A3 (en) 1988-05-18
EP0259098A2 (de) 1988-03-09
SG102291G (en) 1992-01-17
ES2021366B3 (es) 1991-11-01
CA1258141A (en) 1989-08-01
JPS63107119A (ja) 1988-05-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee