DE68920219D1 - Temperaturkompensierte bipolare Schaltungen. - Google Patents

Temperaturkompensierte bipolare Schaltungen.

Info

Publication number
DE68920219D1
DE68920219D1 DE68920219T DE68920219T DE68920219D1 DE 68920219 D1 DE68920219 D1 DE 68920219D1 DE 68920219 T DE68920219 T DE 68920219T DE 68920219 T DE68920219 T DE 68920219T DE 68920219 D1 DE68920219 D1 DE 68920219D1
Authority
DE
Germany
Prior art keywords
temperature compensated
bipolar circuits
compensated bipolar
circuits
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68920219T
Other languages
English (en)
Other versions
DE68920219T2 (de
Inventor
Terry J Johnson
Timwah Luk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of DE68920219D1 publication Critical patent/DE68920219D1/de
Application granted granted Critical
Publication of DE68920219T2 publication Critical patent/DE68920219T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14Modifications for compensating variations of physical values, e.g. of temperature
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45479Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
DE68920219T 1988-07-19 1989-07-14 Temperaturkompensierte bipolare Schaltungen. Expired - Fee Related DE68920219T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/221,322 US4853646A (en) 1988-07-19 1988-07-19 Temperature compensated bipolar circuits

Publications (2)

Publication Number Publication Date
DE68920219D1 true DE68920219D1 (de) 1995-02-09
DE68920219T2 DE68920219T2 (de) 1995-08-10

Family

ID=22827327

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68920219T Expired - Fee Related DE68920219T2 (de) 1988-07-19 1989-07-14 Temperaturkompensierte bipolare Schaltungen.

Country Status (6)

Country Link
US (1) US4853646A (de)
EP (1) EP0351719B1 (de)
JP (1) JPH0286322A (de)
KR (1) KR0142104B1 (de)
CA (1) CA1292289C (de)
DE (1) DE68920219T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2560888B2 (ja) * 1990-05-17 1996-12-04 日本電気株式会社 レベル検波回路
JP3135283B2 (ja) * 1991-06-27 2001-02-13 キヤノン株式会社 絶対値検出用信号処理回路装置
JPH0555903A (ja) * 1991-08-27 1993-03-05 Nec Corp バツフア回路
DE4227282C1 (de) * 1992-08-18 1993-11-25 Siemens Ag Digitaler Stromschalter
US5323068A (en) * 1992-11-17 1994-06-21 National Semiconductor Corporation Low power low temperature ECL output driver circuit
US5701097A (en) * 1995-08-15 1997-12-23 Harris Corporation Statistically based current generator circuit
US5751180A (en) * 1996-09-03 1998-05-12 Motorola, Inc. Electrical device structure having reduced crowbar current and power consumption
EP0887936A1 (de) * 1997-06-24 1998-12-30 STMicroelectronics S.r.l. Oszillator für Betrieb mit niedriger Versorgungsspannung
JP3166678B2 (ja) * 1997-09-22 2001-05-14 日本電気株式会社 半導体集積回路
US6437634B1 (en) 1997-11-27 2002-08-20 Nec Corporation Semiconductor circuit in which distortion caused by change in ambient temperature is compensated
US5889441A (en) * 1997-12-12 1999-03-30 Scenix Semiconductor, Inc. Temperature and voltage independent on-chip oscillator system and method
DE10220587B4 (de) * 2002-05-08 2007-07-19 Infineon Technologies Ag Temperatursensor für MOS-Schaltungsanordnung
JP4791700B2 (ja) * 2004-03-29 2011-10-12 株式会社リコー 半導体装置、半導体装置の調整方法および電子装置
DE102004062357A1 (de) * 2004-12-14 2006-07-06 Atmel Germany Gmbh Versorgungsschaltung zur Erzeugung eines Referenzstroms mit vorgebbarer Temperaturabhängigkeit
JP4854393B2 (ja) * 2006-06-21 2012-01-18 三星電子株式会社 電圧発生回路
JP5660115B2 (ja) * 2012-12-18 2015-01-28 株式会社村田製作所 ヘテロ接合バイポーラトランジスタ、これを用いた電力増幅器、及びヘテロ接合バイポーラトランジスタの製造方法
US9182767B2 (en) * 2013-03-11 2015-11-10 Qualcomm Incorporated Devices and methods for calibrating and operating a snapback clamp circuit
JP7329378B2 (ja) * 2019-07-09 2023-08-18 ローム株式会社 差動信号送信回路
DE112021001229T5 (de) * 2020-02-25 2023-01-05 Rohm Co. Ltd. Konstantspannung-Erzeugungsschaltung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207538A (en) * 1978-08-29 1980-06-10 Rca Corporation Temperature compensation circuit
JPS5797218A (en) * 1980-12-08 1982-06-16 Citizen Watch Co Ltd Cmos ring oscillator
JPS5911666A (ja) * 1982-07-13 1984-01-21 Nec Corp 集積回路装置
JP2525346B2 (ja) * 1983-10-27 1996-08-21 富士通株式会社 定電流源回路を有する差動増幅回路
JPS60174527A (ja) * 1984-02-21 1985-09-07 Nec Corp 論理回路
US4730126A (en) * 1986-08-27 1988-03-08 Advanced Micro Devices, Inc. Temperature compensated high performance hysteresis buffer
US4757273A (en) * 1987-07-13 1988-07-12 Derek Bray Complementary transconductance amplifiers

Also Published As

Publication number Publication date
EP0351719A3 (de) 1991-04-24
EP0351719B1 (de) 1994-12-28
DE68920219T2 (de) 1995-08-10
EP0351719A2 (de) 1990-01-24
US4853646A (en) 1989-08-01
KR900002559A (ko) 1990-02-28
JPH0286322A (ja) 1990-03-27
KR0142104B1 (ko) 1998-07-15
CA1292289C (en) 1991-11-19

Similar Documents

Publication Publication Date Title
DE3773384D1 (de) Verbindungsanordnung fuer mehrere integrierte schaltungen.
DE58906492D1 (de) Halbleiterschaltung.
NO891828L (no) Integrert kretskort.
DE3784376D1 (de) Temperatur-kompensierte oszillatorschaltung.
DE3776226D1 (de) Verstaerkerschaltung.
DE3779164D1 (de) Elektronisches klinisches thermometer.
DE3788811D1 (de) Elektronisches klinisches thermometer.
DE3682305D1 (de) Integrierte digitale schaltungen.
DE68920219D1 (de) Temperaturkompensierte bipolare Schaltungen.
DE3751376D1 (de) Schaltungselement.
DE3853814D1 (de) Integrierte Halbleiterschaltung.
FI890607A0 (fi) Kopplingsanordning.
DE68912036D1 (de) Temperaturkompensationsschaltung.
DE68921088D1 (de) Integrierte Halbleiterschaltung.
DE3781109D1 (de) Tiefsttemperatur-empfindlicher schalter.
NL194811B (nl) Servoschakeling.
DE3580417D1 (de) Thermisches ausgluehen integrierter schaltungen.
DE3768881D1 (de) Integrierte schaltungen mit stufenfoermigen dielektrikum.
DE3889570D1 (de) Halbleiterschaltung.
DE68916093D1 (de) Integrierte Schaltung.
DE3787838D1 (de) Schaltungen mit mehreren gesteuerten Verstärkerelementen.
DE69016235D1 (de) Hochtemperaturbauteil.
DE3887457D1 (de) Bipolarkomplementäre MOS-Schaltung.
DE3684525D1 (de) Digitale integrierte schaltungen.
DE3683242D1 (de) Doppelredundante fehlermaskierende logische schaltungen.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FAIRCHILD SEMICONDUCTOR CORP. (N.D.GES.D. STAATES

8339 Ceased/non-payment of the annual fee