JPS57157546A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57157546A
JPS57157546A JP4295881A JP4295881A JPS57157546A JP S57157546 A JPS57157546 A JP S57157546A JP 4295881 A JP4295881 A JP 4295881A JP 4295881 A JP4295881 A JP 4295881A JP S57157546 A JPS57157546 A JP S57157546A
Authority
JP
Japan
Prior art keywords
hole
film
layer
polycrystal
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4295881A
Other languages
Japanese (ja)
Inventor
Kazuhito Misu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4295881A priority Critical patent/JPS57157546A/en
Publication of JPS57157546A publication Critical patent/JPS57157546A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To form a taper at the stepped section of a hole, and to prevent the disconnection of an Al wiring layer shaped to the taper by jointly using etching employing fluoric acid and plasma etching when a PSG layer and a polycrystal Si layer functioning as a gate electrode are laminated onto the electrode section of an MOS type IC and the hole is bored to the electrode section. CONSTITUTION:The PSG layer 2 and the polycrystal Si layer 5 functioning as the gate electrode are laminated and formed onto the electrode section 1 of the MOS type IC, and the surface is coated with a photo-resist film 6 with a predetermined hole. The Si layer 5 is etched by using fluoric acid weakened, and the hole larger than the hole of the film 6 is formed through etching in the lateral direction. The hole with the same size as the hole of the film 6 is bored to the PSG film 2 through plasma etching while leaving the film 6, the film 6 is removed, the thickness of the film 2 is thinned in response to the large hole through second plasma etching, and the stepped section is shaped to the hole of the film 2. The stepped section is smoothed through heat treatment, a polycrystal Si layer 3 is grown on the whole surface, and the layer 3 is coated with the Al wiring layer 4.
JP4295881A 1981-03-24 1981-03-24 Manufacture of semiconductor device Pending JPS57157546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4295881A JPS57157546A (en) 1981-03-24 1981-03-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4295881A JPS57157546A (en) 1981-03-24 1981-03-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57157546A true JPS57157546A (en) 1982-09-29

Family

ID=12650528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4295881A Pending JPS57157546A (en) 1981-03-24 1981-03-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57157546A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0259098A2 (en) * 1986-09-04 1988-03-09 AT&T Corp. Integrated circuits having stepped dielectric regions
JPH04287347A (en) * 1990-11-21 1992-10-12 Hyundai Electron Ind Co Ltd Connection device of semiconductor integrated circuit and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0259098A2 (en) * 1986-09-04 1988-03-09 AT&T Corp. Integrated circuits having stepped dielectric regions
JPH04287347A (en) * 1990-11-21 1992-10-12 Hyundai Electron Ind Co Ltd Connection device of semiconductor integrated circuit and manufacture thereof

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