JPS56135945A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56135945A JPS56135945A JP4087980A JP4087980A JPS56135945A JP S56135945 A JPS56135945 A JP S56135945A JP 4087980 A JP4087980 A JP 4087980A JP 4087980 A JP4087980 A JP 4087980A JP S56135945 A JPS56135945 A JP S56135945A
- Authority
- JP
- Japan
- Prior art keywords
- film
- grooves
- multilayer wiring
- nitride film
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To provide minute multilayer wiring by providing grooves in a semiconductor layer or a metal layer film on a semiconductor substrate for oxidizing treatment and thereby filling up the grooves with the oxide of semiconductor or metal to facilitate the separation between elements and the formation of electrode wiring. CONSTITUTION:An Al film 104 and a silicon nitride film 105 are connected on to the substrate 101 having a silicon oxide film 103 selectively. The silicon nitride film and the Al film are etched sequentially by means of a resist pattern 106 and thereby the grooves are provided. When anode oxidation treatment is applied subsequently, the lateral surface of the Al film 104 is converted into alumina 111, which fills up the grooves through the change in volume. Then, the photoresist being removed, a nitride film 112 is connected, a conduction orifice 113 is provided, an Al layer 114 is further formed, and thus the multilayer wiring is formed. By this method, the separation between elements and the minute multilayer wiring can be effected with ease.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4087980A JPS56135945A (en) | 1980-03-28 | 1980-03-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4087980A JPS56135945A (en) | 1980-03-28 | 1980-03-28 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56135945A true JPS56135945A (en) | 1981-10-23 |
Family
ID=12592790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4087980A Pending JPS56135945A (en) | 1980-03-28 | 1980-03-28 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56135945A (en) |
-
1980
- 1980-03-28 JP JP4087980A patent/JPS56135945A/en active Pending
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