JPS57164563A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57164563A JPS57164563A JP55175648A JP17564880A JPS57164563A JP S57164563 A JPS57164563 A JP S57164563A JP 55175648 A JP55175648 A JP 55175648A JP 17564880 A JP17564880 A JP 17564880A JP S57164563 A JPS57164563 A JP S57164563A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- polycrystal
- etching
- electrode
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000001039 wet etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
PURPOSE:To avoid short circuit between electrodes when multi-layer electrodes of polycrystal Si is manufactured by a method wherein residual polycrystal Si layer adhering to the end of a lower layer polycrystal Si electrode of the region which corresponds to the gap portion of an upper layer polycrystal Si electrode is separated and removed by etching. CONSTITUTION:A thin SiO2 film for etching stopper is formed and then the first polycrystal Si layer 16' is formed on an Si substrate on which a field oxide film 11 has been formed. Then an SiO2 film 17 for layer insulation is formed by thermal oxidation of the surface of the layer 16' and resist pattern 19 is formed on the surface. Then the film 17 and the polycrystal Si 16 are removed by wet- etching with HF and by dry-etching with plasma. After that a thin SiO2 film 22 of thickness approximately 1,000Angstrom is formed on the end surface of the lower layer polycrystal Si electrode 16' and the second polycrystal Si layer 23 is piled on the whole surface. Finally the polycrystal Si layer 23 is patterned and the required multi-layer electrodes composition is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55175648A JPS5953710B2 (en) | 1980-12-12 | 1980-12-12 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55175648A JPS5953710B2 (en) | 1980-12-12 | 1980-12-12 | Manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57164563A true JPS57164563A (en) | 1982-10-09 |
| JPS5953710B2 JPS5953710B2 (en) | 1984-12-26 |
Family
ID=15999763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55175648A Expired JPS5953710B2 (en) | 1980-12-12 | 1980-12-12 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5953710B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60142531U (en) * | 1984-02-28 | 1985-09-20 | 株式会社明電舎 | Gate turn-off thyristor |
-
1980
- 1980-12-12 JP JP55175648A patent/JPS5953710B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60142531U (en) * | 1984-02-28 | 1985-09-20 | 株式会社明電舎 | Gate turn-off thyristor |
| JPH0448024Y2 (en) * | 1984-02-28 | 1992-11-12 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5953710B2 (en) | 1984-12-26 |
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