DE69020316D1 - MOS-Schaltkreis mit einem Gate-optimierten lateralen bipolaren Transistor. - Google Patents
MOS-Schaltkreis mit einem Gate-optimierten lateralen bipolaren Transistor.Info
- Publication number
- DE69020316D1 DE69020316D1 DE69020316T DE69020316T DE69020316D1 DE 69020316 D1 DE69020316 D1 DE 69020316D1 DE 69020316 T DE69020316 T DE 69020316T DE 69020316 T DE69020316 T DE 69020316T DE 69020316 D1 DE69020316 D1 DE 69020316D1
- Authority
- DE
- Germany
- Prior art keywords
- gate
- bipolar transistor
- lateral bipolar
- mos circuit
- optimized lateral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/447,984 US4999518A (en) | 1989-12-08 | 1989-12-08 | MOS switching circuit having gate enhanced lateral bipolar transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69020316D1 true DE69020316D1 (de) | 1995-07-27 |
DE69020316T2 DE69020316T2 (de) | 1996-02-08 |
Family
ID=23778545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69020316T Expired - Fee Related DE69020316T2 (de) | 1989-12-08 | 1990-10-20 | MOS-Schaltkreis mit einem Gate-optimierten lateralen bipolaren Transistor. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4999518A (de) |
EP (1) | EP0431290B1 (de) |
JP (1) | JPH03190426A (de) |
DE (1) | DE69020316T2 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5155387A (en) * | 1989-12-28 | 1992-10-13 | North American Philips Corp. | Circuit suitable for differential multiplexers and logic gates utilizing bipolar and field-effect transistors |
US5134323A (en) * | 1990-08-03 | 1992-07-28 | Congdon James E | Three terminal noninverting transistor switch |
JPH04200013A (ja) * | 1990-11-29 | 1992-07-21 | Hitachi Ltd | 論理回路 |
US5075571A (en) * | 1991-01-02 | 1991-12-24 | International Business Machines Corp. | PMOS wordline boost cricuit for DRAM |
JP3396763B2 (ja) * | 1992-05-22 | 2003-04-14 | 日本テキサス・インスツルメンツ株式会社 | ロジック回路 |
SE501218C2 (sv) * | 1993-05-18 | 1994-12-12 | Asea Brown Boveri | Lateral bipolär transistor med variabel basvidd och ett förfarande för styrning av basvidden |
US5530381A (en) * | 1993-05-24 | 1996-06-25 | Texas Instruments Incorporated | Integrated high-speed bipolar logic circuit method |
JP2508968B2 (ja) * | 1993-05-25 | 1996-06-19 | 日本電気株式会社 | 半導体装置 |
US6675361B1 (en) | 1993-12-27 | 2004-01-06 | Hyundai Electronics America | Method of constructing an integrated circuit comprising an embedded macro |
US5671397A (en) | 1993-12-27 | 1997-09-23 | At&T Global Information Solutions Company | Sea-of-cells array of transistors |
US5591655A (en) * | 1995-02-28 | 1997-01-07 | Sgs-Thomson Microelectronics, Inc. | Process for manufacturing a vertical switched-emitter structure with improved lateral isolation |
US5614424A (en) * | 1996-01-16 | 1997-03-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for fabricating an accumulated-base bipolar junction transistor |
US6245607B1 (en) | 1998-12-28 | 2001-06-12 | Industrial Technology Research Institute | Buried channel quasi-unipolar transistor |
US6255694B1 (en) | 2000-01-18 | 2001-07-03 | International Business Machines Corporation | Multi-function semiconductor structure and method |
JP5090402B2 (ja) * | 2009-05-15 | 2012-12-05 | シャープ株式会社 | 半導体装置およびその駆動方法 |
US8531001B2 (en) | 2011-06-12 | 2013-09-10 | International Business Machines Corporation | Complementary bipolar inverter |
US8526220B2 (en) | 2011-06-12 | 2013-09-03 | International Business Machines Corporation | Complementary SOI lateral bipolar for SRAM in a low-voltage CMOS platform |
US8929133B2 (en) | 2012-12-02 | 2015-01-06 | International Business Machines Corporation | Complementary SOI lateral bipolar for SRAM in a CMOS platform |
US11588044B2 (en) * | 2020-12-02 | 2023-02-21 | Globalfoundries U.S. Inc. | Bipolar junction transistor (BJT) structure and related method |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5227279A (en) * | 1975-08-25 | 1977-03-01 | Mitsubishi Electric Corp | Semiconductor unit |
US4331969A (en) * | 1976-11-08 | 1982-05-25 | General Electric Company | Field-controlled bipolar transistor |
US4344081A (en) * | 1980-04-14 | 1982-08-10 | Supertex, Inc. | Combined DMOS and a vertical bipolar transistor device and fabrication method therefor |
JPS5751952A (en) * | 1980-09-12 | 1982-03-27 | Sanshin Ind Co Ltd | Ignition apparatus of 2-cycle engine |
US4441117A (en) * | 1981-07-27 | 1984-04-03 | Intersil, Inc. | Monolithically merged field effect transistor and bipolar junction transistor |
JPS5986923A (ja) * | 1982-11-10 | 1984-05-19 | Toshiba Corp | 半導体装置 |
EP0349022A3 (de) * | 1985-01-30 | 1991-07-24 | Kabushiki Kaisha Toshiba | Halbleiteranordnung |
JPS61274512A (ja) * | 1985-05-30 | 1986-12-04 | Oki Electric Ind Co Ltd | 出力バツフア回路 |
JPS6481271A (en) * | 1987-09-22 | 1989-03-27 | Nec Corp | Conductivity-modulation type mosfet |
US4829200A (en) * | 1987-10-13 | 1989-05-09 | Delco Electronics Corporation | Logic circuits utilizing a composite junction transistor-MOSFET device |
JP2653095B2 (ja) * | 1988-04-22 | 1997-09-10 | 富士電機株式会社 | 伝導度変調型mosfet |
GB8810973D0 (en) * | 1988-05-10 | 1988-06-15 | Stc Plc | Improvements in integrated circuits |
-
1989
- 1989-12-08 US US07/447,984 patent/US4999518A/en not_active Expired - Fee Related
-
1990
- 1990-10-20 DE DE69020316T patent/DE69020316T2/de not_active Expired - Fee Related
- 1990-10-20 EP EP90120140A patent/EP0431290B1/de not_active Expired - Lifetime
- 1990-11-26 JP JP2318190A patent/JPH03190426A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH03190426A (ja) | 1991-08-20 |
DE69020316T2 (de) | 1996-02-08 |
EP0431290B1 (de) | 1995-06-21 |
EP0431290A3 (en) | 1992-01-29 |
EP0431290A2 (de) | 1991-06-12 |
US4999518A (en) | 1991-03-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69003321D1 (de) | MOS-integrierte Schaltung mit regelbarer Schwellspannung. | |
DE69020316D1 (de) | MOS-Schaltkreis mit einem Gate-optimierten lateralen bipolaren Transistor. | |
DE3583119D1 (de) | Bipolartransistor mit heterouebergang. | |
DE3884292D1 (de) | Bipolarer Transistor mit Heteroübergang. | |
DE69012194D1 (de) | Integrierter Halbleiterschaltkreis. | |
DE3776052D1 (de) | Leitende kunststoffzusammensetzungen. | |
DE3889610D1 (de) | Halbleiteranordnung mit einem Trench-Bipolartransistor. | |
DE3866016D1 (de) | Mos-transistor-brueckenschaltung. | |
DE3576612D1 (de) | Halbleiteranordnung mit mos-transistoren. | |
DE3788453D1 (de) | Komplementäres vertikales bipolares Transistorpaar mit flachem Übergang. | |
DE68903243D1 (de) | Spannungs-stromumsetzer mit mos-transistoren. | |
DE69011038D1 (de) | Integrierte Halbleiterschaltung. | |
DE3888148D1 (de) | Integrierte Schaltung mit einem Lateraltransistor. | |
DE3785196D1 (de) | Bipolartransistor mit heterouebergang. | |
DE3889177D1 (de) | Leitfähige Kunststoffzusammensetzung. | |
DE3887457D1 (de) | Bipolarkomplementäre MOS-Schaltung. | |
DE3686180D1 (de) | Vertikaler mos-transistor mit peripherer schaltung. | |
DE3860836D1 (de) | Bipolarer transistor mit heterouebergang. | |
DE3788500D1 (de) | Bipolarer Halbleitertransistor. | |
DE3581159D1 (de) | Halbleiteranordnung mit integrierter schaltung. | |
DE69118929D1 (de) | Halbleiteranordnung mit einem bipolaren Hochfrequenz-Transistor | |
DE3585173D1 (de) | Halbleiterbauelement mit versenktem kondensator. | |
DE3851991D1 (de) | Bipolartransistoren. | |
DE69007502D1 (de) | Von einer Vorrichtung mit zwei symmetrischen Ladungspumpen gesteuerte Leistungs-MOS-Transistorschaltung. | |
DE68917422D1 (de) | Transistorschaltung mit Basisstromausgleich. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |