DE69118929D1 - Halbleiteranordnung mit einem bipolaren Hochfrequenz-Transistor - Google Patents

Halbleiteranordnung mit einem bipolaren Hochfrequenz-Transistor

Info

Publication number
DE69118929D1
DE69118929D1 DE69118929T DE69118929T DE69118929D1 DE 69118929 D1 DE69118929 D1 DE 69118929D1 DE 69118929 T DE69118929 T DE 69118929T DE 69118929 T DE69118929 T DE 69118929T DE 69118929 D1 DE69118929 D1 DE 69118929D1
Authority
DE
Germany
Prior art keywords
semiconductor arrangement
frequency transistor
bipolar high
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69118929T
Other languages
English (en)
Other versions
DE69118929T2 (de
Inventor
Noburo Noda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69118929D1 publication Critical patent/DE69118929D1/de
Publication of DE69118929T2 publication Critical patent/DE69118929T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69118929T 1990-01-25 1991-01-24 Halbleiteranordnung mit einem bipolaren Hochfrequenz-Transistor Expired - Fee Related DE69118929T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013528A JPH07109831B2 (ja) 1990-01-25 1990-01-25 半導体装置

Publications (2)

Publication Number Publication Date
DE69118929D1 true DE69118929D1 (de) 1996-05-30
DE69118929T2 DE69118929T2 (de) 1996-10-02

Family

ID=11835659

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69118929T Expired - Fee Related DE69118929T2 (de) 1990-01-25 1991-01-24 Halbleiteranordnung mit einem bipolaren Hochfrequenz-Transistor

Country Status (5)

Country Link
US (1) US5138417A (de)
EP (1) EP0439163B1 (de)
JP (1) JPH07109831B2 (de)
KR (1) KR940003603B1 (de)
DE (1) DE69118929T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0590804B1 (de) * 1992-09-03 1997-02-05 STMicroelectronics, Inc. Vertikal isolierter, monolithischer Hochleistungsbipolartransistor mit Topkollektor
US5387813A (en) * 1992-09-25 1995-02-07 National Semiconductor Corporation Transistors with emitters having at least three sides
WO1996014665A1 (en) * 1994-11-03 1996-05-17 Telefonaktiebolaget Lm Ericsson Ballast monitoring for radio frequency power transistors
DE19740909C2 (de) * 1997-09-17 1999-07-01 Siemens Ag Anordnung zur Reduktion von Rauschen bei Mikrowellentransistoren und Verfahren zu deren Herstellung
JPH11102916A (ja) * 1997-09-29 1999-04-13 Nec Corp 半導体集積回路装置およびその設計方法
US6977420B2 (en) * 1998-09-30 2005-12-20 National Semiconductor Corporation ESD protection circuit utilizing floating lateral clamp diodes
WO2000075998A1 (en) * 1999-06-03 2000-12-14 Koninklijke Philips Electronics N.V. Connection arrangement for a semiconductor device and method of manufacturing same
EP1220321A1 (de) * 2000-12-28 2002-07-03 STMicroelectronics S.r.l. Vielfachemitter-Bipolartransistor für Bandabstands-Referenzschaltungen
JP2003045882A (ja) * 2001-07-27 2003-02-14 Nec Corp 半導体装置及びその設計方法
US10411086B2 (en) 2014-04-07 2019-09-10 Semiconductor Components Industries, Llc High voltage capacitor and method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL164703C (nl) * 1968-06-21 1981-01-15 Philips Nv Halfgeleiderinrichting, voorzien van een contact met ten minste twee gedeelten en een voor deze gedeelten gemeenschappelijk gedeelte, waarbij in elk der ver- bindingswegen tussen de gedeelten en het gemeenschappe- lijke gedeelte een serieweerstand is opgenomen.
JPS5799771A (en) * 1980-12-12 1982-06-21 Hitachi Ltd Semiconductor device
JPS62229975A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 電力用トランジスタ

Also Published As

Publication number Publication date
JPH03219638A (ja) 1991-09-27
JPH07109831B2 (ja) 1995-11-22
KR910015067A (ko) 1991-08-31
US5138417A (en) 1992-08-11
EP0439163A3 (en) 1992-03-04
EP0439163B1 (de) 1996-04-24
EP0439163A2 (de) 1991-07-31
KR940003603B1 (ko) 1994-04-25
DE69118929T2 (de) 1996-10-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee