DE69326284T2 - Halbleiteranordnung mit anschlusswählender Schaltung - Google Patents
Halbleiteranordnung mit anschlusswählender SchaltungInfo
- Publication number
- DE69326284T2 DE69326284T2 DE69326284T DE69326284T DE69326284T2 DE 69326284 T2 DE69326284 T2 DE 69326284T2 DE 69326284 T DE69326284 T DE 69326284T DE 69326284 T DE69326284 T DE 69326284T DE 69326284 T2 DE69326284 T2 DE 69326284T2
- Authority
- DE
- Germany
- Prior art keywords
- connection
- selecting circuit
- semiconductor arrangement
- semiconductor
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
- H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15017792 | 1992-06-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69326284D1 DE69326284D1 (de) | 1999-10-14 |
DE69326284T2 true DE69326284T2 (de) | 2000-03-23 |
Family
ID=15491191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69326284T Expired - Lifetime DE69326284T2 (de) | 1992-06-10 | 1993-06-08 | Halbleiteranordnung mit anschlusswählender Schaltung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5412333A (de) |
EP (1) | EP0573965B1 (de) |
KR (1) | KR970006975B1 (de) |
DE (1) | DE69326284T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5552725A (en) * | 1994-08-05 | 1996-09-03 | Advanced Micro Devices, Inc. | Low power, slew rate insensitive power-on reset circuit |
JP2643872B2 (ja) * | 1994-11-29 | 1997-08-20 | 日本電気株式会社 | ボンディング・オプション回路 |
JP2877039B2 (ja) * | 1995-08-16 | 1999-03-31 | 日本電気株式会社 | 半導体集積回路 |
EP0787993A4 (de) * | 1995-08-21 | 1999-09-15 | Matsushita Electronics Corp | Spannungsdetektor , strom-ein-/aus-rücksetzschaltung und halbleitergerät |
JP3415347B2 (ja) * | 1995-10-25 | 2003-06-09 | Necエレクトロニクス株式会社 | マイクロコンピュータの動作モード設定用入力回路 |
FR2744303B1 (fr) * | 1996-01-31 | 1998-03-27 | Sgs Thomson Microelectronics | Dispositif pour neutraliser un circuit electronique lors de sa mise sous tension ou sa mise hors tension |
US5805014A (en) * | 1996-03-01 | 1998-09-08 | Compaq Computer Corporation | System having active pull-down circuit and method |
US5880596A (en) * | 1996-11-05 | 1999-03-09 | Altera Corporation | Apparatus and method for configuring integrated circuit option bits with different bonding patterns |
US5920227A (en) * | 1997-06-16 | 1999-07-06 | Advanced Micro Devices, Inc. | Zero current draw circuit for use during a bonding option |
TW417267B (en) * | 1997-11-20 | 2001-01-01 | Davicom Semiconductor Inc | Structure of bonding option |
JP2000100814A (ja) | 1998-09-18 | 2000-04-07 | Hitachi Ltd | 半導体装置 |
JP3423904B2 (ja) * | 1999-10-06 | 2003-07-07 | 沖電気工業株式会社 | 半導体集積回路 |
DE60130936T2 (de) | 2000-03-08 | 2008-07-24 | Matsushita Electric Industrial Co., Ltd., Kadoma | Integrierte Halbleiterschaltung |
KR100349344B1 (ko) * | 2000-06-14 | 2002-08-21 | 주식회사 하이닉스반도체 | 멀티 레벨 본딩 옵션 회로 |
DE10102000B4 (de) * | 2001-01-18 | 2004-04-08 | Infineon Technologies Ag | Integrierte Schaltung mit Erkennungsschaltung und Verfahren zum Überprüfen einer Anschlusssituation eines Bondpads |
KR100426989B1 (ko) * | 2001-06-13 | 2004-04-13 | 삼성전자주식회사 | 패키지 전원핀을 이용한 제어신호 인가방법 및 그에 따른집적회로 패키지 구조 |
US7131033B1 (en) | 2002-06-21 | 2006-10-31 | Cypress Semiconductor Corp. | Substrate configurable JTAG ID scheme |
US7818640B1 (en) | 2004-10-22 | 2010-10-19 | Cypress Semiconductor Corporation | Test system having a master/slave JTAG controller |
JP2009054869A (ja) * | 2007-08-28 | 2009-03-12 | Toshiba Corp | 半導体デバイス、情報処理装置および電源電圧変動抑制方法 |
DE202012004532U1 (de) | 2012-03-08 | 2013-06-10 | Rohde & Schwarz Gmbh & Co. Kg | Halbleiterschaltung mit elektrischen Anschlüssen mit mehrfacher Signal- oder Potentialbelegung |
US11994888B2 (en) | 2022-07-18 | 2024-05-28 | Nxp Usa, Inc. | Power supply handling for multiple package configurations |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01280923A (ja) * | 1988-05-07 | 1989-11-13 | Mitsubishi Electric Corp | 半導体集積回路装置 |
JPH0821846B2 (ja) * | 1989-02-03 | 1996-03-04 | 日本電気株式会社 | ワイアード信号ドライブ回路 |
-
1993
- 1993-06-08 EP EP93109216A patent/EP0573965B1/de not_active Expired - Lifetime
- 1993-06-08 DE DE69326284T patent/DE69326284T2/de not_active Expired - Lifetime
- 1993-06-09 KR KR1019930010400A patent/KR970006975B1/ko not_active IP Right Cessation
- 1993-06-10 US US08/074,673 patent/US5412333A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5412333A (en) | 1995-05-02 |
EP0573965B1 (de) | 1999-09-08 |
DE69326284D1 (de) | 1999-10-14 |
KR940006274A (ko) | 1994-03-23 |
KR970006975B1 (ko) | 1997-05-01 |
EP0573965A3 (de) | 1995-06-21 |
EP0573965A2 (de) | 1993-12-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC CORP., TOKIO/TOKYO, JP Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: ELPIDA MEMORY, INC., TOKYO, JP |